Large-area microwave plasma chemical vapor deposition system

A microwave plasma and chemical vapor deposition technology, applied in the field of plasma chemical vapor deposition system, can solve the problems of high power operation difficulty, deposition difficulty, quartz window damage, etc.

Inactive Publication Date: 2014-01-22
WUHAN INSTITUTE OF TECHNOLOGY
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Problems solved by technology

After decades of development and improvement, the best antenna-coupled stainless steel resonant cavity MPCVD device in China (operating frequency is 2.45 GHz), the microwave power level that can be coupled into the vacuum cavity is close to the limit, making the high power and high It is quite difficult to deposit large-area films under atmospheric pressure
At the same time, because the quartz window is located directly above the plasma ball, when the air pressure is low and the power is high, the plasma ball will be stabilized at the quartz window, thereby causing damage to the quartz window. power operation will be particularly difficult

Method used

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  • Large-area microwave plasma chemical vapor deposition system
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Embodiment Construction

[0009] The embodiments of the present invention will now be described in conjunction with the accompanying drawings, and the present invention is not limited to the following embodiments.

[0010] The water-cooled vacuum chamber 6 is made of stainless steel and other preferred metals that are not easily deformed by heat. The vacuum chamber body 6 has a water-cooled vacuum chamber loam cake 3, which is made of stainless steel and other preferred metals that are not susceptible to high temperature deformation. The top of the vacuum chamber loam cake 3 is provided with an air inlet 2 for air intake and for observation work state observation window 1, and four observation windows 1 are also provided around the vacuum chamber 6 to observe the working state. The inside of the vacuum chamber upper cover 3 is respectively provided with two recesses 4 and 5 of different sizes, and the recess 4 The role is to enable the generation of TM on the substrate 01 The equipotential surface of ...

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Abstract

The invention belongs to the microwave plasma chemical vapor deposition system field, and mainly relates to a microwave plasma chemical vapor deposition system for preparation of a large-area high-quality diamond film. The system mainly includes a vacuum part and a microwave lead-in part, the vacuum part includes a vacuum chamber and a vacuum chamber upper cover, two concave parts with different specific sizes are formed on the center-side surface of the vacuum chamber upper cover, so that the vacuum chamber is a multi-mode chamber body, two large-area even-energy plasma spheres produced by two modes are formed above a substrate table, the microwave lead-in part mainly includes, from bottom to top, a waveguide, a quartz ring and a mode transforming antenna, the substrate table combines the lower part of the chamber body so as to clamp the quartz ring to maintain the vacuum, the mode transforming antenna leads microwave into the vacuum chamber, and the vacuum chamber, the mode transforming antenna and the water-cooled substrate table are fixed by a ceramic ring to maintain strict centring.

Description

technical field [0001] The invention belongs to the field of microwave plasma chemical vapor deposition systems, and mainly relates to a microwave plasma chemical vapor deposition system for preparing high-quality large-area diamond films. Background technique [0002] Diamond film has the characteristics of wide bandgap, high thermal conductivity, high hardness and high infrared transmittance, and has excellent application prospects in high-power semiconductors, heat sinks, infrared detection windows and other fields. In these applications, the requirements for the prepared diamond film mainly focus on high purity, high uniformity and large area, among which the large-area deposition of diamond film can greatly reduce the cost and further promote the industrial application of diamond film. Microwave plasma chemical vapor deposition has the advantages of electrodeless discharge, concentrated and evenly distributed energy in the discharge area, etc., and can achieve rapid dep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/517C23C16/511C23C16/513C23C16/27
Inventor 熊礼威龚国华汪建华翁俊崔晓慧
Owner WUHAN INSTITUTE OF TECHNOLOGY
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