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Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same

a technology of phosphorous atoms and n-type atoms, which is applied in the direction of polycrystalline material growth, crystal growth process, transportation and packaging, etc., can solve the problems of n-type atoms added to the amount of n-type atoms, the crystallinity of the fabricated is not affected, and the film of n-type (100) oriented single crystal diamond semiconductor cannot be obtained, etc., to achieve the effect of large impact in the industry

Inactive Publication Date: 2008-08-14
NAT INST OF ADVANCED IND SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a film of n type (100) oriented single crystal diamond semiconductor and a manufacturing method for the same. The invention solves the problem of poor reactivity and poor crystal quality when doping diamond films with phosphorus atoms. By using phosphorus vapor in a concentration at a level which deviates from common knowledge for doping, the invention provides a film with improved crystal quality and better reactivity. The film has suitable properties for use in various semiconductor devices and has high utility value.

Problems solved by technology

However, as far as the present inventors know, there are no preceding examples that confirmed the existence of an n type diamond semiconductor on the (100) plane in any patent or academic paper.
Even when such methods are attempted, however, a film of n type (100) oriented single crystal diamond semiconductor, which is important in the industry, could not be obtained, due to poor reactivity.
This is because it was firmly believed that increase in the amount of n type atoms added to be harmful to the crystallinity of the fabricated n type diamond semiconductor single crystal film.
The crystallinity of diamond becomes poor when the concentration is further increased.

Method used

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  • Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same
  • Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same
  • Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same

Examples

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Effect test

example 1

[0037]In accordance with a microwave plasma chemical vapor phase synthesizing method, phosphine was added to hydrogen containing 0.2% of methane so that the ratio of phosphorus (P) to carbon (C) became 5% and the resulting gas was introduced into a reaction chamber having a pressure for synthesis of 50 Torr, and a diamond film was formed on the (100) oriented single crystal diamond having an off angle of 1.5 degrees (a diamond substrate where the plane direction is inclined by 1.5 degrees in any direction for the (100) plane), on the substrate at 900° C. The film was confirmed to have n type properties at room temperature by measuring the Hall effect, and the mobility thereof was 350 cm2 / Vs and the concentration of the carrier was 3×109 cm−3.

example 2

[0038]In accordance with a microwave plasma chemical vapor phase synthesizing method, phosphine was added to hydrogen containing 0.5% of methane so that the ratio of phosphorus (P) to carbon (C) became 7.5% and the resulting gas was introduced into a reaction chamber kept at a pressure for synthesis of 75 Torr, and a diamond film was formed on the (100) oriented single crystal diamond having an off angle of 2.8 degrees, at 800° C. on the substrate. The film was confirmed to have n type properties at room temperature by measuring the Hall effect, and the mobility thereof was 47 cm2 / Vs and the concentration of the carrier was 9×109 cm−3.

example 3

[0039]In accordance with a microwave plasma chemical vapor phase synthesizing method, phosphine was added to hydrogen containing 0.4% of methane so that the ratio of phosphorus (P) to carbon (C) became 5% and the resulting gas was introduced into a reaction chamber kept at a pressure for synthesis of 25 Torr, and a diamond film was formed on the (100) oriented single crystal diamond having an off angle of 0.5 degrees at 900° C. of the substrate. The film was confirmed to have n type properties at room temperature by measuring the Hall effect, and the mobility thereof was 230 cm2 / Vs and the concentration of the carrier was 5×10 9 cm−3.

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Abstract

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Description

TECHNICAL FIELD[0001]The film of n type (100) oriented single crystal diamond according to the present invention can be applied to such electric devices as ultraviolet light emitting devices, electron emission sources, high frequency transistors, high power transistors, X ray and particle ray sensors, and X ray and particle position sensors.[0002]The present invention relates to a method of preparing a film of n type (100) oriented single crystal diamond, and provides a manufacturing method according to which an n type (100) oriented diamond semiconductor that can make up such general semiconductor devices as ultraviolet light emitting elements, electron beam emission elements, power semiconductor elements and high frequency semiconductor elements can be formed efficiently.BACKGROUND ART[0003]Conventional single crystal diamond semiconductor films can be manufactured by the method of generating microwave plasma, and thus growing a diamond film which includes carbon and phosphorus on...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C01B31/06C30B23/00
CPCC30B25/02C30B25/105C30B25/20C30B29/04H01L21/02376H01L21/02433Y10T428/30H01L21/02576H01L21/02609H01L21/0262C30B25/18C30B29/40H01L21/02527
Inventor KATO, HIROMITSUYAMASAKI, SATOSHIOOKUSHI, HIDEYOSHIKATA, SHINICHI
Owner NAT INST OF ADVANCED IND SCI & TECH
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