Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same

Abstract

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application is a Continuation of pending U.S. application Ser. No. 11 / 883,488, filed on Aug. 1, 2007, which claims priority to Japanese Application No. 2005-027181, filed Feb. 3, 2005, and of which is the national phase under 35 U.S.C. §371 of PCT International Application No. PCT / JP2006 / 301210 which has an International filing date of Jan. 26, 2006, which designated the United States of America, all of which are hereby incorporated by reference as if fully set forth herein.TECHNICAL FIELD[0002]The film of n type (100) oriented single crystal diamond according to the present invention can be applied to such electric devices as ultraviolet light emitting devices, electron emission sources, high frequency transistors, high power transistors, X ray and particle ray sensors, and X ray and particle position sensors.[0003]The present invention relates to a method of preparing a film of n type (100) oriented single crystal diamond, and provi...

AI Technical Summary

Benefits of technology

"The present invention provides a method for manufacturing a film of an n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms. By using a phosphorous vapor in a concentration at a level which deviates from common knowledge, the inventors solved the problem of doping diamond semiconductor using a plasma chemical vapor deposition method. The invention can be used with different methods of chemical vapor deposition such as microwave CVD, filament CVD, DC plasma CVD, and arc jet plasma CVD. The invention also allows for the use of a diamond substrate with an off angle of 0 degree to 10 degrees and control of the weight ratio of phosphorous atoms to carbon atoms in the plasma vapor phase to control the properties of the semiconductor. The temperature on the surface of the substrate can also be set to 800° C. to 1000° C."

Problems solved by technology

However, as far as the present inventors know, there are no preceding examples that confirmed the existence of an n type diamond semiconductor on the (100) plane in any patent or academic paper.

Even when such methods are attempted, however, a film of n type (100) oriented single crystal diamond semiconductor, which is important in the industry, could not be obtained, due to poor reactivity.

This is because it was firmly believed that increase in the amount of n type atoms added to be harmful to the crystallinity of the fabricated n type diamond semiconductor single crystal film.

The crystallinity of diamond becomes poor when the concentration is further increased.

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