Diamond substrate-based gallium nitride high-electron-mobility transistor and preparation method thereof

Abstract

The invention discloses a diamond substrate-based gallium nitride high-electron-mobility transistor and a preparation method thereof. The method comprises the following steps of firstly cleaning a silicon carbide-based gallium nitride wafer and the surface of a temporary slide; coating the front surface of the temporary slide with an adhesive material as a bonding material and putting the adhesive material on a hot plate for baking; oppositely bonding the silicon carbide-based gallium nitride wafer and the front surface of the temporary slide; carrying out thinning polishing and etching on a silicon carbide substrate of the silicon carbide-based gallium nitride wafer to remove the residual silicon carbide substrate; cleaning the surface of a gallium nitride epitaxial layer employing the temporary slide as a support; growing a layer of dielectric on the outer surface of the gallium nitride epitaxial layer employing the temporary slide as the support; carrying out epitaxial growth of a polycrystalline diamond substrate on the gallium nitride epitaxial layer employing the temporary slide as the support and automatically separating a diamond-based gallium nitride wafer from the temporary slide; and preparing the high-electron-mobility transistor on the diamond-based gallium nitride wafer. The limitation that original epitaxial growth is very difficult is broken, and epitaxial growth of diamond on gallium nitride can be relatively well controlled.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology, in particular to a gallium nitride high electron mobility transistor based on a diamond substrate and a preparation method thereof. Background technique [0002] Gallium nitride high electron mobility transistors, as the third-generation wide bandgap compound semiconductor devices, have the characteristics of high two-dimensional electron gas concentration, high breakdown field strength, and high electron saturation velocity. However, the power performance advantages of GaN high electron mobility transistors are far from being fully utilized. One of the main reasons is that GaN microwave power devices generate a lot of heat while outputting high power, but they cannot quickly and effectively dissipate the heat. Let it out. At present, gallium nitride materials are mainly epitaxially grown on silicon carbide, sapphire and other substrate materials (200610011228.6, 200810226288.9,...

AI Technical Summary

Problems solved by technology

However, the current method of directly epitaxially growing GaN on a diamond substrate has a lot of problems. Poor material quality, which prevents the performance advantages of GaN high electron mobility transistors based on diamond substrates from being fully exploited

At present, researchers have not yet solved the problems of poor quality and difficult growth of GaN epitaxially grown on diamond substrates, which also limits the development of GaN-on-diamond devices.

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