256 results about "Slip line" patented technology

A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes thermally treating selected portions of the peripheral edge to compensate for local differences in heat absorption. This establishes a substantially equivalent temperature over both the surface of the central region and the surface of the peripheral edge to prevent the appearance of slip lines on those surfaces.

A tension strap to be used with any brand of ACL or OA functional knee bracing. The position, elasticity and versatility of the strap allow it to be used for patella support and to prevent vertical migration of the brace. The strap is placed over the anterior side of the face of the knee joint with the support buttress lying adjacent to the anterior edge of the patella and the support straps extended posteriorly to the upper arms and lower arms of the brace. The support straps are then pulled around the outside of the upper arms and lower arms of the brace and adhered back to themselves using hook and loop fastener material. Additional support tension can be applied to the patella through the buttress support by increasing tension through the support straps. The prevention of vertical migration of the knee brace is also achieved through the use of non-slip lining on the face of the tension strap that is in contact with the skin covering the knee joint and patella.

The invention relates to a production method of an anti-aging tinning black plate with hardness HR30Tm of 55+/-4 and discloses a production method of an anti-aging tinning black plate. The method comprises the following steps: smelting: adopting KR desulfurization, smelting in a converter, RH vacuum treatment and continuous casting; hot rolling: carrying out the hot rolling of a continuous castingblank comprising the following chemical components in percentage by weight: C: 0.02-0.06, Si: smaller than or equal to 0.025, Mn: smaller than or equal to 0.50, P: smaller than or equal to 0.020, S:smaller than or equal to 0.030, Als: 0.005-0.040, Ti: 0.005-0.020, N: smaller than or equal to 0.005, the balance of Fe and inevitable impurities; and carrying out pickling, cold rolling, electrolyticdegreasing, full-hydrogen bell furnace annealing and leveling of a tinning black plate with hardness HR30Tm of 51-59. The invention has the advantages of small production control difficulty and low cost and hardness value, is beneficial for users to use the anti-aging tinning black plate to manufacture deep drawing cans and can lids with complicated deformation, lessens the canning defects of cracks, crazing slip lines or corded bent surfaces, and the like and improves the canning yield rate and the canning qualified rate.

The invention discloses a clean and dust-proof crane which comprises a crane and a dust remover. The crane comprises a crane cart end beam structure, a main beam, and a trolley; exsertion gears and wheels are both made of dust-free materials such as nylon or hard plastic; the cart end beam structure and the main beam are both made of stainless steel material; wheels of the cart and wheels of the trolley respectively have a dust-proof difference; the lifting steel wire rope is formed of stainless steel wires and the lifting steel wire rope and the pulley are all sealed in a dust-proof cover; a dust-proof safety slip line with a dust-proof device disposed at the lower part is adopted; the turbine fan of the wind-guiding wheel of the dust remover is fixed on the shaft of a motor, and the motor is fixed on a rectangular body by mounting feet; a dust collecting filter is disposed at the lower part of the turbine fan; the whirlwind dust collector includes a multi cyclone unit having a first cyclone and a secondary cyclone disposed outside the first cyclone. The crane has the advantages of excellent dust-proof effect and high efficiency, and is convenient to use.

The invention relates to a method for growing a high-resistance thick layer silicon epitaxy on a 6-inch heavily As-doped silicon substrate. In the method, a normal-pressure flat plate type epitaxial furnace is adopted. The method comprises the following steps: (1) corroding an epitaxial furnace base by using hydrogen chloride with the purity of not less than 99.99 percent at a high temperature; (2) loading a silicon substrate sheet in the epitaxial furnace, purging a cavity of the epitaxial furnace for 8-10min by sequentially using nitrogen and hydrogen with purities of not less than 99.99 percent; (3) performing in-situ corrosion on the surface of the silicon substrate sheet by using hydrogen chloride gas; (4) purging the surface of the silicon substrate sheet by large-flow hydrogen; (5) growing an intrinsic epitaxial layer on the substrate by using non-doped trichlorosilane; (6) growing a doped epitaxial layer; and (7) cooling after the epitaxial layer reaches a preset temperature during growing. The method has the beneficial effects of being used for successfully preparing a high-resistance thick layer silicon epitaxy structure with thickness non-uniformity of less than 1 percent and specific resistance non-uniformity of less than 1 percent, without defects of a stacking fault, dislocation, a slip line and fog, with an optimal transition region width of less than 4 micrometers, good uniformity and a narrow transition region, and capable of completely meeting a requirement of a power MOS device on a silicon epitaxial material in an aspect of a parameter.

The invention relates to a production method of a heavily phosphorus-doped thin substrate silicon epitaxial layer for Schottky devices. The method adopts a normal-pressure flat plate type epitaxial furnace, and comprises the following steps: 1, polishing the pedestal of the epitaxial furnace at a high temperature by using hydrogen chloride with the purity being not lower than 99.99%; 2, filling the epitaxial furnace with a phosphorus-doped silicon substrate slice, and sequentially purging the cavity of the epitaxial furnace by nitrogen and hydrogen, wherein the purities of nitrogen and hydrogen are not lower than 99.999% respectively; 3, polishing the surface of the silicon substrate slice by using a hydrogen chloride gas; 4, purging the surface of the silicon substrate slice by using a bulk flow of hydrogen; 5, growing an intrinsic epitaxial layer; 6, carrying out variable flow purging on the reaction cavity of the epitaxial furnace; and 7, growing a doped epitaxial layer. The thickness inhomogeneity of the epitaxial layer is smaller than 1%, the resistivity inhomogeneity of the epitaxial layer is smaller than 1%, the surface of the epitaxial layer has no stacking fault, dislocation, slip lines, mist or other defects, the width of a transition region under optimum conditions can be smaller than 1[mu]m, and requirements of the silicon epitaxial layer by the Schottky devices can be completely met, so the performances and the yield of the Schottky devices are improved.

A fall protection apparatus is described which allows for a user to effectuate a controlled descent after a fall has been arrested. The apparatus includes a tether line secured above a protected position of the user and a cinch line which frictionally engages the tether. The cinch line is attached to the user, and when the user falls, the frictional engagement of the cinch line and the tether line increase and arrests the fall. The user then pulls on a slip line attached to the cinch line to descend. Pulling on the slip line decreases the frictional engagement of the cinch line and the tether line so the user can control their descent rate based on how hard they pull on the slip line.

The invention relates to a method for preparing a thick epitaxial layer on a thin sb substrate for a VDMOS device. The method comprises: scale values of nine groups of adjusting rods arranged below a graphite pedestal of an epitaxial furnace are set respectively; the epitaxial furnace pedestal is processed by etching and polishing by using hydrogen chloride HC1 gas under a high temperature; a silicon substrate sheet is installed in a pit of the epitaxial furnace pedestal and the surface of the silicon substrate is polished by using the HC1 gas; sweeping is carried out on the surface of the silicon substrate sheet by using high-flow hydrogen; a thin intrinsic epitaxial layer grows on the silicon substrate sheet; a doped epitaxial layer grows; after the thickens of the doped epitaxial layer reaches a predetermined thickness, cooling is carried out; and then thicknesses of nine testing points of the epitaxial wafer are measured, thereby obtaining an average thickness value and a uniformity value of a silicon epitaxial wafer. Therefore, good control of epitaxial growth of the thin 400-micron sb substrate is realized; the nonuniformity of the thickness is less than 0.5%; defects of slip line, edge breakage, and damage existence at the edge are overcome; and the requirements on the silicon epitaxial layer of the VDMOS device are met; and the processing yield of the device is improved.

The present invention relates to a potentiometer, which is used for measuring the DC voltage and adopts the slip-line disc. The potentiometer consists of three stepping discs and a double-slip-line disc; the four discs all consist of a measuring disc and a replacing disc, which have the same resistance value; the working current is divided into two branches of 10 to 1 between two electrical brushes of the first stepping disc; two branches of the same current are formed in the branch with two parallel discs; the electrical brushes of the other measuring discs except the first stepping disc are connected with the electrical disc of the replacing disc through resistances or wires; each stepping disc or the double-slip-line disc has no auxiliary disc; therefore, the volume of the device is reduced, the manufacturing cost of the device is reduced, simultaneously the four measuring discs are connected through wires, and the influence of the variation and the thermoemf is eliminated.

The invention discloses a glue-free PVC (polyvinyl chloride) limited slip floor tile of a ring structure and a preparation method thereof. as for the limited slip floor tile, a flexible thermocompression line is formed on the bottom surface of a PVC limited slip layer in a thermocompression manner; the thermocompression line comprises a plurality of seal hexagon protruding ribs which are continuously and repetitively connected and seal round protruding ribs which are positioned in each hexagon protruding rib; the material formulation of the PVC limited slip layer comprises the following components by weight: 58.5%-63.5% of PVC with polymerization degree of 1000, 34.9-39% of plasticizing agent, 0.95%-2.1% of stabilizing agent, 0.5%-0.69% of toner, and 0.06%-0.08% of calcium carbonate of 800 molybdenum; and the required softness obtained by using particular formulation dosage of the limited slip layer is combined with the limited slip line which is composed of non-hexagon of particular size and shape and the round protruding ribs to enable the limited slip coefficient to be more than 1.5, thereby overcoming the bottle neck of improving the limited slip performance in the industry of plastic floor tiles.

The invention relates to a production method of hot-galvanized low-alloy high strength steel having no yield point elongation and used for automobile sheets. The production method comprises smelting,continuous casting, hot rolling, acid continuous rolling and hot galvanizing procedures. The steel comprises chemical components in percentage by mass as follows: 0.060%-0.090% of C, smaller than or equal to 0.05% of Si, 0.65%-0.75% of Mn, 0.015%-0.025% of P, smaller than or equal to 0.010% of S, 0.025%-0.06% of Als, 0.025%-0.035% of Nb, smaller than or equal to 0.0040% of N and the balance Fe andinevitable impurities. By reasonable component design and control on key process parameters such as hot rolling coiling temperature and finishing elongation, dislocation gets rid of the effect of solute atom (Cottrell) anchoring, the yield point elongation can be completely eliminated, slip line defects in the re-machining forming process are avoided, the final surface quality of the product is improved, and the steel has excellent mechanical properties.

A slip clip line apparatus designed for use with fishing floats and sinkers to aid in their attachment to a fishing line. The slip clip has a slip body which engages the fishing line and allows the slip clip to slide freely along a predetermined length of fishing line. The slip body is a U-shaped apparatus having an open and centrally located line slip which is substantially closed. The slip clip further has a lower insertion body which may be connected to a piece of tubing that in turn may be connected to a float or a sinker.

A method for limiting slip lines in a semiconductor substrate including a support layer and a useful semiconductor layer that is transferred to the support layer. The method includes precipitating at least a portion of interstitial oxygen in the support layer by a series of heat treatments conducted after bonding of the useful semiconductor layer to the support layer. The heat treatments occur at a temperature and a time sufficient to reduce the generation of slip lines therein.

The invention relates to a production method of a tin plate. The tin plate comprises the following chemical components by percent: 0.0010%-0.0040% of C, 0.4%-0.7% of Mn, 0.03%-0.08% of Al, not more than 0.03% of Si, 0.015%-0.04% of Ti, 0.003%-0.005% of B, not more than 0.015% of P, not more than 0.015% of S, not more than 0.003% of N and the balance of Fe and some inevitable impurity elements. The production method of the tin plate sequentially comprises the following steps of: steel-making, continuous casting, hot-rolling, pickling, cold continuous rolling, continuous annealing, leveling and tinning. Compared with the prior art, the tin plate produced by the method is easy for subsequent processing, is unlikely to have defects of cracking, slip line cobwebbing or creasing and barring of a curved surface, is capable of meeting the needs of a user, and is low in cost and convenient for large-scale popularization.

The invention discloses a rapid cooling device applied to general nursing. The rapid cooling device comprises a sticking plate, wherein the sticking plate is a hollow elastic plate body; air vents are uniformly distributed in the lower surface of the sticking plate; a control box is fixed to the left side of the upper surface of the sticking plate; and a fan is arranged on an air intake tube in the middle of the upper surface of the sticking plate. The rapid cooling device applied to general nursing, which is fixed by virtue of straps in coordination with latches, is simple to fix; by virtue of non-slip lines, the sticking plate is prevented from rotating; through the fan, controllable fluid can be provided, so that skin surface can be cooled; under pressure caused by the fan, water in a water bag is sprayed out by a trace amount; heat energy is taken away with evaporation of the water, and in coordination with air-cooling, a better effect is guaranteed; meanwhile, the fan can be used for controlling a cooling speed; by arranging a temperature sensor, feedback parameters can be provided for control of the fan timely; an alarm can be triggered as the temperature sensor is separated away from the skin or the water in the water bag runs out; therefore, the rapid cooling device is convenient to control, high in cooling speed and good in effect; and the rapid cooling device is applicable to patient cooling in general nursing.

The invention relates to a method for calibrating thermal processing equipment used for heat treatment of a multilayer substrate, in particular a multilayer semiconductor substrate. A calibration test profile is determined by processing a calibration test substrate according to thermal process parameters that produce multilayer substrates having an even thickness profile, and/or having reduced slip lines and/or reduced wafer deformation, and/or having other desired and predetermined properties. Then a particular thermal processing equipment is calibrated by determining thermal process parameters for that equipment so that a test substrate processed with these parameters will have the determined calibration test profile.

The invention discloses a profile angle assembling device which comprises an L-shaped first member and two second members. The first member comprises two supporting arms connected vertically mutually; the two second members are respectively arranged at outer ends of the two supporting arms. Contact surfaces between the second members and the supporting arms are bevel surfaces with uniform inclination angle, and side surfaces, opposite to the bevel surfaces, of the second members are parallel to side surfaces, opposite to the bevel surfaces, of the supporting arms. Rails and slots matched mutually are respectively arranged on the contact surfaces between the second members and the supporting arms and at the positions near the outer ends of the supporting arms. Regulating threads are formed on the contact surfaces between the second members and the supporting arms and at the positions near the vertical joints, and through slots are formed, corresponding to the threads, in the contact surfaces between the supporting arms and the second members. Anti-slip lines are respectively formed on the side surfaces, opposite to the bevel surfaces, of the second members and the side surfaces, opposite to the bevel surfaces, of the supporting arms. The profile angle assembling device is convenient to use and mount and capable of improving evenness and strength of assembled profile angles.

The invention relates to a lateral compression device used for compressing the side face of a workpiece. The device comprises a positioning block, a compressing block and a transmission bolt, wherein an inclined face is arranged on one side of the positioning block and provided with a dovetail convex groove; one side face of the compressing block is matched with the inclined face of the positioning block and provided with a dovetail concave groove; the other side face of the compressing block is provided with zigzag anti-slip lines; the compressing block is in sliding connection with the positioning block through the transmission bolt; the upper surface and the inclined face of the positioning block are provided with a digital display mainboard and a pressure sensor correspondingly; the pressure sensor communicates with the digital display mainboard through a circuit. Compared with the prior art, the lateral compression device used for compressing the side face of the workpiece is simple in structure, high in practicability, capable of accurately controlling the amplitude of compressing force, convenient to operate, safe, reliable and wide in use range.

Disclosed is a silicon wafer wherein a plurality of terraces are formed on the surface with steps which are formed of a monatomic layer. There is no slip line in the wafer.