31 results about "Slip line" patented technology

The invention relates to the technical field of solid rocket engine combustion chamber composite material shells, and provides a large-aperture-ratio fiber winding composite material shell structure which comprises a front sealing head, a barrel section, a front skirt and a rear skirt assembly. The front sealing head is connected with one end of the cylinder section, the front skirt sleeve is arranged on the front sealing head and extends to the outside of one end of the cylinder section, and the other end of the cylinder section is connected with the rear skirt assembly. A traditional end socket is omitted, stable winding forming of the large-aperture-ratio composite material winding shell is achieved, and the requirement that the composite material shell bears the high internal pressure load effect is met. According to the structure, a traditional composite shell forming wire hanging tool and a combustion chamber shell skirt structure are combined, the structure and the function are integrated, the problem of fiber wire sliding during winding of a large-aperture-ratio structure is solved, the manufacturability of winding forming of the large-aperture-ratio composite shell is greatly improved, and the internal pressure bearing capacity of the large-opening composite shell is improved.

This invention relates to the field of semiconductor material testing technology, specifically a single-crystal silicon wafer slip line detection system and method, comprising: a light source module emitting light signals of different wavelengths and polarization angles to scan the silicon wafer; a silicon wafer scanning module mounting the silicon wafer under test, adjusting the position of the silicon wafer under test, and executing a scanning trajectory to scan the silicon wafer with light signals; a signal acquisition and processing module receiving the light signals transmitted through the silicon wafer under test, performing preprocessing to obtain DU values ​​at different wavelengths and polarization angles, and sending them to an industrial control computer; the industrial control computer reconstructing the strain field based on the DU values ​​using a strain field reconstruction algorithm to generate a strain field distribution map; and identifying slip lines based on the strain field distribution map using a convolutional neural network model. This solution enables non-contact, non-destructive, and high-resolution slip line detection, thereby improving detection accuracy and efficiency.

The invention provides a preparation method and an evaluation method of a bonded wafer, and the method comprises the steps: providing the bonded wafer, carrying out a thermal strengthening process on the bonded wafer, the process temperature of the thermal strengthening process is X, the process time of the thermal strengthening process is Y, Y =-0.5 X + 700, and X is greater than or equal to 1100 DEG C and less than or equal to 1300 DEG C; according to the invention, the bonding force of the bonded wafer can be improved, and meanwhile, slip lines are prevented from being generated.

The invention relates to the technical field of machining, and discloses a chamfering tool metal dead zone shape prediction method based on a slip line theory. The method comprises the steps that firstly, a chamfering cutting edge right-angle cutting slip line field model is constructed, a right-angle cutting coordinate system is established with an S1 point as an original point, then an S1 point Moire circle model is established based on the plastic deformation theory, and the size of an included angle omega 1 formed by a metal dead zone boundary S1S3 and a chamfering S1S2 is solved in combination with the Coulomb friction theorem; and then determining a slope relational expression of the line segment S2S3 and the line segment DN through a geometrical relationship, establishing an equation to solve the height of a shunt point, and finally solving the length 1 of the lower boundary of the metal dead zone, thereby realizing prediction of the shape of the metal dead zone. According to the method, the mathematical relationship between the parameters of the cutting edge of the chamfering tool and the shape of the metal dead zone is established particularly for the shape of the dead zone of the cutting edge of the chamfering tool, so that the boundary of the dead zone can be represented according to the parameters of the cutting edge of the chamfering tool, and the prediction effect of the shape of the metal dead zone of the chamfering tool is achieved.

The utility model relates to the technical field of television tuners, and discloses an environment-friendly television tuner with a degradable shell, which comprises a shell, a C-shaped groove is arranged at the top of the outer surface of the shell, a C-shaped strip is inserted into the inner surface of the C-shaped groove, and a sliding cover is fixedly connected to the top end of the outer surface of the C-shaped strip. The inner surface of the sliding cover is slidably connected with the top of the outer surface of the shell, an arc-shaped protruding block is fixedly connected to the inner surface of the sliding cover, a groove is formed in the top of the outer surface of the shell, the outer surface of the arc-shaped protruding block is connected with the inner surface of the groove in a clamped mode, a connecting assembly is arranged on the outer surface of the shell, and the connecting assembly comprises a threaded head. According to the utility model, the C-shaped groove is connected with the C-shaped strip in an inserted manner, so that the stability and guidance quality of the sliding cover are ensured. Friction force is increased through anti-skid lines outside the sliding cover, the arc-shaped protruding blocks can be disengaged from the grooves to be clamped through shifting, the sliding cover can be rapidly disassembled without tools, and the overhauling efficiency is improved.

This invention discloses a method for calculating the ultimate stress of surrounding rock in a non-circular tunnel, belonging to the field of tunnel engineering. The method includes the following steps: establishing a coordinate system with the center of the invert arch as the origin and defining the plastic zone based on fundamental parameters, wherein the fundamental parameters include tunnel geometric parameters, altered rock physical and mechanical parameters, and in-situ stress parameters; deriving the characteristic stresses and rotation angles of the invert arch boundary and the side arch boundary based on the fundamental parameters, the coordinate system, and the Mohr-Coulomb yield criterion to obtain the boundary conditions; deriving the differential and integral equations of the slip line in the plastic zone based on the altered rock physical and mechanical parameters to obtain the basic equations; constructing a computational grid using the finite difference method based on the boundary conditions and the basic equations and iteratively solving the problem to obtain the converged characteristic stresses and rotation angles of the grid nodes; and calculating the ultimate stress distribution of the plastic zone based on the converged characteristic stresses and rotation angles of the grid nodes.

The invention provides a method for improving a slip line at the tail of a heavily doped silicon single crystal, and belongs to the technical field of semiconductor manufacturing. Comprising the steps that S1, after material melting is completed, doping is conducted in a gas phase doping mode, so that the doping concentration of a doping agent is increased; s2, when the silicon single crystal grows to 80% of the total length, gradually reducing the furnace pressure to increase the volatilization of the dopant and reduce the enrichment of tail impurities; meanwhile, temperature compensation is carried out to release thermal stress, and lattice deformation at the tail of the crystal bar is reduced. According to the method, a gas phase doping mode is adopted, and meanwhile, the furnace pressure starts to be reduced in the later stage of the equal-diameter process, so that tail impurity enrichment is reduced, and slippage lines generated by tail impurity enrichment are reduced; temperature compensation is synchronously carried out at the later stage of the equal-diameter procedure, slip lines generated due to thermal stress concentration are reduced, and therefore the slip lines generated in different ways are effectively improved, the loss of the available length of the crystal bar is reduced, and the qualified rate of the crystal bar is increased.

The invention provides a silicon single crystal rod and an ending method thereof. The silicon single crystal rod comprises an equal-diameter structure; the ending structure is connected to one end, far away from the growth starting end, of the equal-diameter structure, and the radial size of the ending structure is in a change trend of firstly decreasing, then increasing and then decreasing along the growth direction of the silicon single crystal rod; wherein, in the increasing phase, the radial dimension of the ending structure is at least partially increased to exceed the radial dimension of the isometric structure. According to the application, the ending structure with the change trend of decreasing, increasing and decreasing is formed at one end, far away from the growth starting end, of the equal-diameter structure, and the radial size of the ending structure at least partially exceeds the radial size of the equal-diameter structure in the increasing stage, so that an area with the local radial size increased is formed; the sliding line can be effectively prevented from climbing to the equal-diameter structure, internal defect expansion of the crystal is avoided, the yield of the single crystal silicon rod and the performance of the device are improved, and the process cost is reduced.

The utility model discloses a slide wire cleaning device applied to a bridge crane, which comprises a fixing frame, a connecting lug, a file plate and an adjusting frame, the fixing frame is of a rectangular structure, the connecting lug is welded on the left side of the fixing frame, an inner groove is formed in the inner side of the fixing frame, the two sides of the inner groove are of a penetrating structure, an insulating layer is installed in the inner groove, and the file plate is connected with the insulating layer. A file plate is installed in the inner groove, an adjusting frame of a penetrating structure is installed on the fixing frame, and the adjusting frame penetrates through a strip-shaped groove formed in the insulating layer and is connected to the file plate. Under the condition that normal use of the crane is not affected, the pocking marks of the electric car can be removed in the running state, the service life of a carbon brush of the crane can be prolonged, the problem of wire sliding faults generated in the running process of the crane is solved, a large amount of manpower, material resources and time are saved, and the working efficiency is improved. In addition, the control screw can be controlled according to the use requirement of the file plate, the file plate is adjusted by controlling the adjusting frame, and the service life is prolonged.

The invention relates to the technical field of semiconductors, and provides a method for improving a crystal growth ending slip line and a computer program product. The method comprises the following steps: providing crystals after equal-diameter growth; setting ending process parameters, to be specific, setting the ending temperature to increase in a stepped manner along with the gradual increase of the ending length, setting the ending pulling speed to increase gradually along with the increase of the ending length, and matching the setting of the ending pulling speed with the setting of the ending temperature; setting the ending crucible to linearly increase along with the increase of the ending length, and setting the ending initial crystal transition of the ending crystal to be the same as the equal-diameter growth end-stage crystal transition; and executing an ending process according to the ending process parameters to obtain the non-slip crystal with the conical tail. According to the method, proper ending process parameters are set after equal-diameter growth is completed, so that the crystals can be ended to form a non-slip conical tail, and finally, a high-quality silicon single crystal rod grows.

The invention relates to the technical field of geotechnical engineering foundation pit support design, in particular to a foundation instability limited width filling foundation pit support soil pressure slip line solution calculation method, and aims to solve the problems that a foundation is simplified into a rigid body and the combined action of the foundation and a structure is ignored in a traditional method. A unified calculation model fusing an active area behind a wall, a passive area in front of the wall and a foundation plastic area is established, differential numerical solution is performed by adopting a characteristic line method through a simultaneous static equilibrium equation and a yield criterion, and construction and stress state calculation of a slip line field are realized by utilizing three types of boundary value problems. According to the method, the active soil pressure and the passive soil pressure borne by the retaining wall and the ultimate bearing capacity of the foundation under the condition of foundation instability can be accurately solved, the accuracy and the engineering applicability of soil pressure calculation under the working conditions of limited width filling and soft soil foundations are remarkably improved, and a reliable theoretical basis is provided for optimal design of a supporting structure.

The utility model discloses a faucet convenient to regulate and control, which comprises a main table body, a temperature control switch, a water distribution module, a front plate, a water leakage plate, a first water outlet, a water leakage hole, anti-slip lines, a vertical pipe, a U-shaped pipe, a second water outlet, a circular bulge and an adjusting button, the temperature control switch is arranged on one side of the top of the main table body, and the water distribution module is arranged at the center of the top of the main table body; a front plate is arranged on one side of the main table body, and a water leakage plate is arranged in a notch formed in the front plate; according to the faucet, the main table body serves as an external table top of the faucet, and the front plate arranged on one side provides a water leakage function and a first water outlet mode of the first water outlet; the vertical pipe on one side of the top, the U-shaped pipe and the second water outlet form a second water outlet mode, the overall structure modeling is simple, and the ornamental value is high; the positions of the two water outlet modes are relatively independent, personalized requirements of users are met, meanwhile, the water outlet modes are achieved by screwing the water distribution module, operation is easy and convenient, and the use experience of the users is improved.

The utility model relates to the technical field of bicycle hand-held anti-slip line forming, in particular to a bicycle hand-held anti-slip line forming die which comprises a workbench, a fixed die is fixedly installed at the top of the workbench, a movable die is connected to the top of the workbench in a sliding mode, and a pushing assembly is arranged on the side, away from the fixed die, of the movable die. A side frame is fixedly installed at the top of the workbench, an electromagnet is fixedly installed on the side frame, the fixed mold and the movable mold are fixedly communicated with a water inlet pipe and a water outlet pipe correspondingly, and a magnetism isolating assembly is arranged on the side, away from the movable mold, of the side frame. According to the device, the electromagnet is used for generating a high-intensity magnetic field, so that a mold and a handheld material are rapidly heated to a proper temperature, the production period is effectively shortened, stress generated by temperature difference is reduced, the stability of the forming process is improved, the electromagnet is powered off during cooling, and the cooling process of the mold and a workpiece is accelerated; and a double-cooling mechanism can quickly stabilize the temperature of the mold, so that the mold is prevented from being deformed due to overheating in the demolding process.

The invention discloses a method for inhibiting an epitaxial slip line of a low-resistance red phosphorus doped silicon substrate. The method comprises the following steps: (1) in a wafer-free state, carrying out Etch / Coat pretreatment on an epitaxial cavity, and adjusting the thickness of a deposition layer on the inner wall of the cavity, so that a thermal field of the cavity is uniform; (2) loading the silicon substrate into a cavity, heating in a hydrogen atmosphere, and introducing hydrogen chloride to etch the surface of the substrate; (3) at the initial stage of epitaxial growth, the growth temperature is controlled to be 1070-1080 DEG C, the flow of trichlorosilane is controlled to be within the range of 5-12 SLM, hydrogen serves as carrier gas for dilution, and a transition layer with the thickness of 0.2-1.0 micrometer grows; (4) raising the growth temperature to 1090-1110 DEG C to form a target epitaxial layer; and (5) cooling after epitaxial growth is completed, and controlling the radial temperature gradient of the wafer to be less than or equal to 15 DEG C in the cooling process. The method can significantly reduce the generation probability of slip lines in the epitaxial growth process, and improves the crystal quality of the epitaxial layer.

The utility model relates to a crown block sliding contact line rail sweeper, and belongs to the technical field of crown block equipment maintenance in the metallurgical industry. According to the technical scheme, the device comprises a slide wire relay (1), a relay sliding block (3), a sliding contact line (4), a steel wire clamping plate (5), a rail sweeping steel wire (6) and a mounting support (7), the slide wire relay (1) is slidably connected to the sliding contact line (4) through the relay sliding block (3), the mounting support (7) is fixed to the relay sliding block (3), the rail sweeping steel wire (6) is fixed to the mounting support (7) through the steel wire clamping plate (5), and the rail sweeping steel wire (6) is matched with the sliding contact line (4); the two rail sweeping steel wires (6) are pressed on the edge of the end face of the sliding contact line (4) through self elastic force. The device has the advantages that the device is installed on a slide block of a slide wire relay of the crown block, in the normal walking process of the crown block, the slide wire is polished and cleaned on line, flashes on two wings of the end face are removed, and power failures caused by short circuit of the flashes, grounding and other factors are avoided.

The utility model relates to an audible and visual alarm which comprises a base, the base is provided with a fixing groove, the fixing groove is provided with anti-slip lines, the base is provided with a screw, the screw is provided with a nut, the screw and the nut are provided with elastic pieces, and the elastic pieces are connected with an external power source. The base is provided with an upper cover, the upper cover is provided with a middle buckle, the middle buckle is provided with a main board matched with the elastic piece, the main board is provided with a buzzer, the upper cover is provided with a lampshade, and the upper cover is provided with a sound amplification channel. By means of the structure, the equipment can be installed and positioned more quickly, and stability is better.

The application discloses a method for epitaxial growth of a silicon wafer, which comprises the following steps: determining a first heating power in a pre-heating stage before epitaxial growth of the silicon wafer and a second heating power in an epitaxial growth stage of the silicon wafer; heating the silicon wafer to be processed to a preset temperature under the first heating power in the pre-heating stage before epitaxial growth of the silicon wafer; and performing epitaxial growth of the silicon wafer to be processed under the second heating power in the epitaxial growth stage. The method for epitaxial growth of the silicon wafer can ensure that no slip line is generated in the epitaxial wafer during the growth process and that the epitaxial wafer with good resistivity uniformity is obtained.

The utility model discloses a multi-angle adjustable automatic locking connector which comprises a first connecting pipe, a second connecting pipe, a third connecting pipe and two groups of limiting mechanisms, wherein the first connecting pipe, the second connecting pipe and the third connecting pipe are axially connected in series. The top ends and the bottom ends of the connecting pipes are provided with inserting parts with anti-skid lines, the tops of the second connecting pipe and the third connecting pipe are provided with vertically-crossed penetrating type assembling grooves, and the bottom ends of the first connecting pipe and the second connecting pipe are provided with tooth-shaped assembling heads meshed with the first connecting pipe and the second connecting pipe. The limiting mechanism is composed of a buckle assembly, a button assembly and a spring reset system, the buckle assembly is engaged with the assembling head through a locking tooth groove to achieve locking, and unlocking is completed through cooperation of the button assembly and the spring reset system. In addition, a long screw is arranged between the assembling groove and the assembling head for fastening, the button assembly is provided with a guide boss, and the inserting part is provided with a sealing groove. According to the connector, multi-angle flexible adjustment can be realized, and the requirements of complex scenes are met; the automatic locking function is combined with the long screw to ensure stable and reliable connection; and the structure is compact, operation is convenient and fast, the installation efficiency and the equipment operation safety are effectively improved, and the wide application value is achieved.

The application discloses an epitaxial control method of slip lines under ultrahigh temperature for a BCD process, which comprises the following steps: (1) preparing a temperature control wafer; (2) heating a reaction cavity and performing HCL cleaning; (3) cooling to room temperature, and loading the temperature control wafer; (4) baking at a constant heating rate to 1150-1200 DEG C; (5) taking out the temperature control wafer for chemical treatment; (6) testing the resistivity of the temperature control wafer, obtaining the temperature of each region of the temperature control wafer, and performing temperature compensation; (7) cleaning a silicon wafer to be epitaxied, and repeating the operation of step (2), then placing the silicon wafer to be epitaxied into the reaction cavity; heating to a preset baking temperature at the heating rate in step (4) and simultaneously performing the temperature compensation in step (6), and baking; adjusting the temperature of the reaction cavity to a growth temperature, inputting SiHCl3 and H2, and doping, and epitaxially growing to a target thickness and a target resistivity. The application can effectively control the temperature distribution of the surface of the silicon wafer in the epitaxial process, and better control the generation of slip lines.

The utility model relates to ship propulsion auxiliary equipment technical field discloses an energy -saving fairing structure for ship, including fairing body and fairing ring, the rear end inner wall of fairing body is connected with adjusting assembly, adjusting assembly includes fixed ring, the utility model compared with prior art's advantage lies in: through adjusting assembly, can adjust the position of fairing ring in the fairing body, adapts the propeller of different rotating speed, ensures that can form stable flow field under the propeller different working condition, has improved the adaptability, the fairing body adopts the horn -like structure, cooperates the arc fairing piece of fairing ring inner wall, can effectively carding water flow, reduces the wake vortex, reduces energy loss, improved energy -saving effect, through the elasticity sealing gasket can strengthen the sealing property of fairing body and ship propulsion system junction, avoids water seepage, prevents the slip line and improves the connection stability simultaneously.

This invention discloses a non-destructive testing method for dislocations in Czochralski-grown single-crystal silicon. The steps include: cutting a thin silicon wafer sample from a pulled crystal ingot and performing surface pretreatment; growing a single-crystal silicon epitaxial layer on the pretreated sample surface, causing native dislocations from the substrate to extend to the epitaxial layer surface, forming detectable slip line defects; scanning and measuring the slip line length using a light-scattering surface defect detector; and determining the axial position of the dislocation defect segment to be removed and performing removal based on a pre-established correspondence between the slip line length and the axial removal height of the crystal ingot, applicable to the same pulling process conditions. Addressing the problems of environmental pollution, low detection accuracy, and low utilization of single-crystal materials in existing chemical etching detection methods, this invention eliminates the need for chemical etching throughout the process, achieving environmentally friendly, accurate, and efficient non-destructive testing of native dislocations, significantly improving the utilization rate of single-crystal materials, and demonstrating strong industrial applicability.

The invention relates to a post-epitaxy film thickness and slip line improvement method, which belongs to the technical field of semiconductor silicon wafer processing, and comprises the following operation steps: a first stage: diagnosis and data acquisition: accurately quantifying resistivity, film thickness distribution and relevance of an epitaxial wafer in a current process; and a second stage: establishing a regulation and control model, and designing a targeted process improvement scheme. A resistivity-film thickness compensation model is established, and target resistivity distribution is achieved by adjusting the flow of dopant gas and the temperature / pressure of a reaction cavity. And a third stage: implementing the new scheme, and verifying the validity of the new scheme. And a fourth stage: solidifying the successfully verified process into a standard operation program, and establishing a daily monitoring mechanism. Verification of resistivity uniformity is a common key for connecting and solving the two problems, and a set of complete closed-loop process from diagnosis, modeling, optimization to solidification is established.

An insole for footwear for children, comprising a forefoot portion (1), a midfoot portion (2), and a rearfoot portion (3), which are sequentially arranged from front to rear, wherein a plurality of first anti-slip protrusions (4) are uniformly distributed on an upper side surface of the forefoot portion (1), an oval-shaped cushioning pocket (5) is provided on an upper side surface of the rearfoot portion (3), a plurality of first anti-slip lines (6) are provided at a front end portion of a lower side surface of the forefoot portion (1), a plurality of second anti-slip protrusions (7) are uniformly distributed on a middle portion of the lower side surface of the forefoot portion (1), a plurality of third anti-slip protrusions (8) are uniformly distributed on a middle portion of a lower side surface of the rearfoot portion (3), a plurality of second anti-slip lines (9) are provided at an outer side of a lower side surface of the midfoot portion (2), and anti-slip grooves (10) are provided at both an inner side of the lower side surface of the midfoot portion (2) and an inner side of the lower side surface of the forefoot portion (1) close to the midfoot portion (2). Providing corresponding anti-slip lines and anti-slip protrusions at various positions prevents slippage from occurring between an insole, a shoe, and a foot, thereby improving comfort and safety.

The utility model discloses a quick-mounting water joint structure of a liquid cooling radiator. The quick-mounting water joint structure comprises a radiator body, a water joint main body, a quick-mounting buckle mechanism, a double-sealing structure and an anti-loosening structure, the quick-mounting buckle mechanism achieves quick locking through a clamping jaw, the double-sealing structure guarantees sealing from two layers through a silica gel sealing gasket and an O-shaped sealing ring, and the anti-loosening structure prevents loosening caused by vibration through anti-skid lines and anti-skid protrusions. The water connector structure has the advantages of being rapid in installation, excellent in sealing performance, high in vibration resistance and the like, solves the problems of a traditional water connector, improves the performance of a liquid cooling heat dissipation system, and is suitable for various heat dissipation scenes.

The utility model discloses a bypass coupling interconnection cable joint. The bypass coupling interconnection cable joint comprises a first joint and a second joint, a first shell of the first connector is provided with an insertion opening, a guide angle and a fixing groove, a second shell of the second connector is provided with a bellmouth, a limiting check ring and a steel ball hole with a steel ball, a springback block and a return spring are installed in the second shell, and an external limiting sleeve is connected with the second shell through a locking spring. During insertion, the guide angle guides the first connector to be inserted, the steel ball is embedded into the fixing groove to achieve locking, and the limiting sleeve reinforces steel ball limiting through the steel ball clamping groove. And separation can be realized by pushing the limiting sleeve to release the steel balls. The shell is made of aluminum alloy materials, safety and interference resistance are improved, anti-slip lines are arranged on the outer side of the first shell and the outer side of the limiting sleeve, operation is convenient, conductive stability is ensured through an internal wiring copper column and a middle connecting column, efficient connection and reliable locking are achieved through a socket and spigot type rapid locking structure in combination with a spring limiting mechanism, plugging resistance is reduced, and loosening is prevented. The cable is suitable for convenient installation and maintenance.

The utility model relates to the technical field of AGV (Automatic Guided Vehicle) accessories, in particular to a current collector supporting structure in a slide wire system. The utility model aims to overcome the defects in the prior art and provides the current collector supporting structure in the slide wire system. A current collector supporting structure in a slide wire system comprises a mounting seat. The connecting rod arm is rotationally connected to the mounting seat; the floating plate is mounted on the connecting rod arm; and the floating plate is installed on the connecting rod arm through the floating assembly, and the floating plate floats within a preset range relative to the connecting rod arm through the floating assembly. According to the utility model, the connecting rod arm is rotatably connected to the mounting seat, and the current collector is mounted on the connecting rod arm, so that the current collector can do 360-degree rotation motion in a plane formed by the moving track of the mobile equipment; therefore, the current collector can adapt to circular motion and reciprocating motion of mobile equipment only by performing linear reciprocating motion in the slide wire groove.

The utility model relates to the technical field of aluminum profiles, and discloses an integrally-formed aluminum profile, which is characterized in that anti-slip lines are respectively arranged on the outer walls of the two sides of the top of a sliding strip, a sliding block is connected to the outer wall of the sliding strip in a sliding manner, anti-slip lines are arranged on the inner wall of the top of the sliding block, and a group of bolts are in threaded connection with the inner walls of the periphery of the top of the sliding block; the bottom ends of the set of bolts extend downwards to the outer walls of the two sides of the sliding strip. Through the arrangement of the anti-skid lines, the stabilizing blocks and the sliding blocks, glass can be installed on the sliding blocks through bolts, the position of the glass can be adjusted left and right by sliding the sliding blocks, the two sides of the sliding blocks are limited to the sliding strips through the two stabilizing blocks, the sliding strips are fixed through the sliding grooves, and the sliding blocks and the bottoms of the stabilizing blocks are fixed through the sliding strips; the two sides of the sliding block and the two sides of the stabilizing block are limited through the aluminum rods, the stabilizing block horizontally slides on the sliding strip to be used, wind power is prevented from driving the stabilizing block to move through the design of anti-skid lines, the sliding block and the stabilizing block are connected through the bolts, and the stabilizing block is convenient to disassemble, assemble and replace.

The present application relates to a kind of methods for solving epitaxial slip line problem by optimizing epitaxial pedestal, the wafer epitaxial process technical field, including the following operating steps: first, the wafer epitaxial pedestal pocket with the depth greater than wafer thickness H is opened on epitaxial pedestal.Second, the center groove lower than the size T of wafer epitaxial pedestal pocket outer circle bottom is milled in the center of wafer epitaxial pedestal pocket.Third, then with wafer epitaxial pedestal pocket outer circle bottom as reference, pocket pedestal slope with the inclination C ° is processed, and the transition slope is communicated between pocket pedestal slope and center groove.Fourth, wafer is placed into wafer epitaxial pedestal pocket, in the process of gas deposition CVD epitaxial processing, reduce the radial temperature gradient of wafer in pocket in heating process, solve the problem of narrow epitaxial slip line window, avoid generating slip line.

The invention belongs to the technical field of semiconductor material processing, and particularly relates to a method for reducing the slip line occurrence rate of a heavily-doped single crystal silicon rod and the single crystal silicon rod, and the method comprises the following steps: after the single crystal silicon rod is drawn, reducing the power according to a preset rate based on the cooling duration, and gradually reducing the power of a heater to cool the single crystal silicon rod, and the thermal stress is slowly released in the cooling process of the silicon single crystal rod, so that the occurrence rate of a slip line is reduced. According to the invention, the power of the heater is gradually reduced according to a preset and slow'predetermined power reduction rate '; by controlling the power attenuation of the heater, the thermal field environment where the silicon single crystal rod is located is indirectly controlled. The heater slows down the heat dissipation speed of the silicon single crystal rod to the surrounding environment, so that the silicon single crystal rod can be slowly and uniformly cooled, the temperature difference between the interior and the surface of the silicon rod and the temperature difference between the upper part and the lower part of the silicon rod are reduced to the maximum extent, the thermal stress borne by the silicon single crystal rod is reduced, the occurrence rate of slippage lines is reduced, and the average yield, quality and performance of the silicon single crystal rod are improved.

The invention relates to the technical field of injection molding structures, in particular to an injection molding structure for increasing creepage distance, which comprises a busbar, an anti-creepage reinforcing rib is arranged on the outer side of the busbar, the anti-creepage reinforcing rib is in a U shape formed by a first fixing plate, a second fixing plate and a third fixing plate, and a supporting boss is arranged on the outer surface of the anti-creepage reinforcing rib. The supporting boss is tightly attached to an injection mold, the supporting effect is achieved, the busbar is prevented from deforming in the injection molding process, the creepage distance between a conductive area in the busbar and the outside world is increased through the creepage-preventing reinforcing ribs, it is ensured that the creepage distance of the busbar obtained after injection molding meets the design standard, and it is ensured that the performance of the busbar obtained after injection molding is safe and reliable in the using process; through the design of the roller, the anti-creepage reinforcing ribs are inserted on the surface of the busbar in a staggered manner by means of the guide of the roller, and are tightly attached by matching with the anti-skid grains on the inner wall, so that the uniformity of the injection molding wall thickness of the four surfaces is ensured, the uniformity of the injection molding wall thickness can be simply and conveniently realized, and the injection molding quality is ensured.