The invention provides a method for improving a
slip line at the
tail of a heavily doped
silicon single crystal, and belongs to the technical field of
semiconductor manufacturing. Comprising the steps that S1, after material melting is completed,
doping is conducted in a
gas phase doping mode, so that the
doping concentration of a doping agent is increased; s2, when the
silicon single crystal grows to 80% of the total length, gradually reducing the furnace pressure to increase the volatilization of the
dopant and reduce the enrichment of
tail impurities; meanwhile, temperature compensation is carried out to release thermal stress, and
lattice deformation at the
tail of the
crystal bar is reduced. According to the method, a
gas phase doping mode is adopted, and meanwhile, the furnace pressure starts to be reduced in the later stage of the equal-
diameter process, so that tail
impurity enrichment is reduced, and slippage lines generated by tail
impurity enrichment are reduced; temperature compensation is synchronously carried out at the later stage of the equal-
diameter procedure, slip lines generated due to thermal
stress concentration are reduced, and therefore the slip lines generated in different ways are effectively improved, the loss of the available length of the
crystal bar is reduced, and the qualified rate of the
crystal bar is increased.