Atomic-order flat surface treatment method of silicon wafer, and heat treatment device

Abstract

Disclosed is a silicon wafer wherein a plurality of terraces are formed on the surface with steps which are formed of a monatomic layer. There is no slip line in the wafer.

Description

technical field [0001] The invention relates to a planarization treatment method for the surface of a silicon wafer used for making semiconductor devices such as IC and LSI. Background technique [0002] The irregularities on the surface of silicon wafers used to make semiconductor devices such as ICs and LSIs hinder the improvement of the current drive capability of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) as shown in Non-Patent Document 1, for example. The main reason is that the surface is required to be planarized as much as possible. [0003] On the other hand, it has been reported that when a silicon wafer is heat-treated in an Ar environment at 1200° C., an ultimate flat surface exhibiting atomic-level step and terrace structures can be formed (Non-Patent Document 2). [0004] However, it is unrealistic to consider mass production under high-temperature treatment such as 1200°C. [0005] On the other hand, Patent Document 1 describes that by perf...

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Problems solved by technology

[0013] However, according to the method of Patent Document 1, it is confirmed that even if a large-diameter silicon wafer such as 200mmφ is heat-treated at a low temperature of 850°C in an atmosphere of high-purity Ar gas, the so-called slip line does not form. Crystalline defects, however, Patent Document 1 does not mention whether it is suitable for mass production, whether it can be applied to silicon wafers with larger diameters, and if it is applicable, whether the yield is high enough to be suitable for mass production, and many more

[0014] That is, Patent Document 1 does not disclose whether the formation of crystal defects can be prevented even when many large-diameter silicon wafers are continuously and continuously processed and mass-produced.

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