Insulating film-coated metal foil

A technology of metal foil and insulating film, applied in the direction of insulators, metal layered products, metal material coating technology, etc., can solve the problems of low flexibility and inappropriate silicon dioxide insulating film, etc., and achieve the effect of improving the yield

Inactive Publication Date: 2015-07-08
NIPPON STEEL MATERIALS COL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In addition, in electronic devices typified by e-paper, which can be deformed to bend, etc., it is difficult for a silicon dioxide insulating film with low flexibility (that is, high Young's modulus) to follow the above-mentioned deformation. For electronic devices subject to such deformation, silicon dioxide insulating films are generally not suitable

Method used

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  • Insulating film-coated metal foil
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  • Insulating film-coated metal foil

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ]

[0055] The first embodiment is a method for producing an insulating film-coated metal foil having an organic-inorganic hybrid material layer, wherein polydimethylsiloxane or the like having an average molecular weight Mw=900 to 10,000 and a compound having a compound selected from Mg, Ca, Metal alkoxides of one or more metals among Y, Al, Sn, Ti, Zr, Nb, Ta, and W are synthesized in an organic solvent to obtain a sol, and the sol is coated on the surface of a SUS foil to form a film.

[0056] (polydimethylsiloxane, etc.)

[0057] Polydimethylsiloxane, dimethyldialkoxysilane, dimethyldichlorosilane, and the like can be used. From the viewpoint of easiness of obtaining a flexible film, polydimethylsiloxane is preferably used.

[0058] Polydimethylsiloxane refers to a substance formed by bonding two methyl groups to Si and continuously bonding Si-O siloxane in a straight chain. The general formula X-[-Si(CH 3 ) 2 -O-] n -Si(CH 3 ) 2 -X means. Wherein, X is a reactive funct...

no. 2 Embodiment approach ]

[0106] The second embodiment is an insulating film-coated metal foil comprising at least a metal foil 10 and an organic-inorganic hybrid material layer 11 ( figure 1 ).

[0107] Concentration of Si at a depth of 1 / 4t from the surface of the layer along the thickness direction of the organic-inorganic hybrid material layer [Si] 1 / 4t Relative to the concentration of Si at a depth of 3 / 4t from the surface of the organic-inorganic hybrid material layer along the thickness direction of the layer [Si] 3 / 4t , has the following relation, [Si] 1 / 4t 3 / 4t , and the relative ratio of the above Si concentration, R Si =[Si] 3 / 4t -[Si] 1 / 4t / [Si] 3 / 4t The value of is 0.02 or more and 0.23 or less.

[0108] Furthermore, the concentration of Si at a depth of 1 / 2t from the surface of the layer along the thickness direction of the organic-inorganic hybrid material layer [Si] 1 / 2t , Concentration of metal element M with metalloxane containing metal elements other than Si [M]1 / 2t Ratio A 1...

Embodiment

[0136] (Coating Solution A)

[0137] Metal alkoxides are used as precursors of metalloxanes, and polydimethylsiloxanes are used as precursors of dimethylsiloxanes. A metal alkoxide made by mixing 8 moles of titanium tetraisopropoxide with ethyl 3-oxobutyrate as a chemical modifier in an amount of 16 moles which is twice the amount of titanium tetraisopropoxide substance. 2.5 moles of polydimethylsiloxane (terminal groups are silanols) having a mass average molecular weight of 3000 were added to the chemically modified titanium alkoxide. Add 1 mole of 1-butanol to the above mixture as a solvent to adjust the viscosity, and then add 5 moles of H 2O, prepare coating solution A.

[0138] (Coating solution B)

[0139] Metal alkoxides are used as precursors of metalloxanes, and polydimethylsiloxanes are used as precursors of dimethylsiloxanes. For the metal alkoxide, titanium tetraisopropoxide was 2 moles, and ethyl 3-oxobutyrate was mixed as a chemical modifier thereof in an a...

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Abstract

An insulating film-coated metal foil having on one or both surfaces thereof an organic-inorganic hybrid layer containing dimethylsiloxane and a metalloxane comprising a metal other than Si. Relative to the concentration [Si] 1 / 4t of the Si at a depth of 1 / 4t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer, the concentration [Si] 3 / 4t of the Si at a depth of 3 / 4t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer satisfies [Si] 1 / 4t <[Si] 3 / 4t , and ([Si] 3 / 4t -[Si] 1 / 4t ) / [Si] 3 / 4t is 0.02-0.23. Provided is a metal foil that can be used in solar cell substrates, flexible circuit substrates, etc., that exhibits surface flatness, pliability, insulating properties and thermal resistance properties, and that has a layer having a surface which is not susceptible to scratching by processes in which substrates are handled, such as conveyance and transshipment.

Description

technical field [0001] The present invention relates to an insulating film-coated metal foil coated with an insulating film containing an organic-inorganic hybrid material. The insulating film-coated metal foil of the present invention can be suitably used for mounting fine components of electronic devices such as thin-film transistors (TFTs), organic EL displays, and electronic paper. Background technique [0002] Silicon dioxide (SiO 2 ) film is an inorganic oxide, so it is excellent in heat resistance, electrical insulation, etc., and can be easily obtained as a flat film, so it can be used as an electrical insulating film in various fields. In addition, a silicon dioxide film is generally formed by a gas phase method such as PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition), or a liquid phase method such as a sol-gel method. [0003] In recent years, the electric field intensity used in these tends to increase along with the increase in demand for arr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B05D7/24B32B9/00B32B15/08B32B27/00C09D5/25C09D7/12C09D183/04C23C26/00
CPCH01B13/06C23C18/1216H01B3/00C23C18/1283B32B2457/12C08G77/58C23C30/00B32B2255/06B32B15/08C23C18/04C23C26/00C09D183/14B32B2255/26C23C18/122C23C18/1241C08G77/16C08K5/05C08L83/04B05D7/24B32B9/00B32B27/00B32B38/00C09D5/00C09D183/04
Inventor 小仓丰史山田纪子久保祐治伊藤左和子
Owner NIPPON STEEL MATERIALS COL LTD
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