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Preparation method for silicon epitaxy sheet for transient voltage restraining diode

A technology for transient voltage suppression and silicon epitaxial wafers, applied in chemical instruments and methods, circuits, electrical components, etc., can solve problems such as thickness and resistivity uniformity control, achieve high uniformity and meet the requirements of use

Active Publication Date: 2017-08-29
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problems of thickness and resistivity uniformity control existing in the preparation process of silicon epitaxial wafers for transient voltage suppression diodes, and obtain A method for preparing a high-uniformity silicon epitaxial wafer for a transient voltage suppression diode, so as to meet the use requirements of a transient voltage suppression diode

Method used

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  • Preparation method for silicon epitaxy sheet for transient voltage restraining diode
  • Preparation method for silicon epitaxy sheet for transient voltage restraining diode
  • Preparation method for silicon epitaxy sheet for transient voltage restraining diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) The bottom end of the induction coil under the graphite base of the epitaxial furnace is equipped with 9 sets of distance-adjustable adjustment rods, which are named 4#-12# respectively. First, the position of the coil is raised or lowered by rotating the adjustment rod, Adjust the distance between each part of the coil and the graphite base to improve the uniformity of the temperature field distribution of the base. The scale value of the 4# adjustment rod is set to -10, and the scale value of the 5# adjustment rod is set to -15 , the scale value of the 6# adjustment lever is set to -30, the scale value of the 7# adjustment lever is set to -30, the scale value of the 8# adjustment lever is set to +3, and the scale value of the 9# adjustment lever is set to -30, the scale value of the 10# adjustment rod is set to -30, the scale value of the 11# adjustment rod is set to +3, and the scale value of the 12# adjustment rod is set to +3.

[0027] (2) First use HCl gas wit...

Embodiment 2

[0039] (1) The bottom end of the induction coil under the graphite base of the epitaxial furnace is equipped with 9 sets of distance-adjustable adjustment rods, which are named 4#-12# respectively. First, the position of the coil is raised or lowered by rotating the adjustment rod, Adjust the distance between each part of the coil and the graphite base to improve the uniformity of the temperature field distribution of the base. Set the scale value of the 4# adjustment rod to -8, and the scale value of the 5# adjustment rod to -10 , the scale value of the 6# adjustment lever is set to -30, the scale value of the 7# adjustment lever is set to -28, the scale value of the 8# adjustment lever is set to +2, and the scale value of the 9# adjustment lever is set to -28, the scale value of the 10# adjustment lever is set to -28, the scale value of the 11# adjustment lever is set to 0, and the scale value of the 12# adjustment lever is set to 0.

[0040] (2) Use HCl gas with a purity of...

Embodiment 3

[0052] (1) The bottom end of the induction coil under the graphite base of the epitaxial furnace is equipped with 9 sets of distance-adjustable adjustment rods, which are named 4#-12# respectively. First, the position of the coil is raised or lowered by rotating the adjustment rod, Adjust the distance between each part of the coil and the graphite base to improve the uniformity of the temperature field distribution of the base. The scale value of the 4# adjustment rod is set to -10, and the scale value of the 5# adjustment rod is set to -10 , the scale value of the 6# adjustment rod is set to -27, the scale value of the 7# adjustment rod is set to -27, the scale value of the 8# adjustment rod is set to +1, and the scale value of the 9# adjustment rod is set to -28, the scale value of the 10# adjustment lever is set to -26, the scale value of the 11# adjustment lever is set to +2, and the scale value of the 12# adjustment lever is set to +2.

[0053] (2) Use HCl gas with a puri...

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Abstract

The invention discloses a preparation method for a silicon epitaxy sheet for a transient voltage restraining diode. According to the preparation method, a gas flow field and a base temperature field are adjusted and an epitaxy technology is optimized, for solving the problem of uniformity control on thickness and resistivity of a present technology for a silicon epitaxy sheet for a transient voltage restraining diode. The control on a self-diffusion process of substrate impurities is realized through the optimization for the epitaxy technology; the high uniformity of the thickness and resistivity of the silicon epitaxy sheet is guaranteed; the surface is free from the defects of stacking fault, dislocation, slip line, fog, and the like; the nonuniformity of the thickness and resistivity of the silicon epitaxy sheet prepared according to the method is below 2%; the scope of average thickness of the silicon epitaxy sheet is 6.10-6.25 micrometers and the scope of average resistivity is 1.25-1.35 ohms.cm, so that the use requirement for the transient voltage restraining diode is met.

Description

technical field [0001] The invention relates to the preparation technology of semiconductor epitaxial materials, in particular to a preparation method of silicon epitaxial wafers for transient voltage suppression diodes. Background technique [0002] With the development of electronic information technology, semiconductor devices are increasingly miniaturized, high-density and multi-functional, which requires fast response time of devices to meet the transmission of high-speed data lines, but also to ensure that they are subject to transient interference from multiple voltages and currents device performance will not be degraded. Transient voltage suppression diode is developed based on the requirements of this market application. It is a new type of high-efficiency protection device in the form of a diode, which is used to protect sensitive semiconductor devices from transient voltage surge damage. It has a junction Small capacitance, short response time, large transient p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/20C30B29/06H01L21/02
CPCC30B25/186C30B25/20C30B29/06H01L21/02381H01L21/02532H01L21/0262
Inventor 李明达陈涛薛兵李普生
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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