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Homogeneous epitaxial lateral growth method for diamond

A technology of lateral growth and homoepitaxial growth, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of low quality of diamond film, achieve the effect of reducing difficulty, improving film quality and high quality

Inactive Publication Date: 2015-05-27
王宏兴
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  • Application Information

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Problems solved by technology

[0014] The purpose of the present invention is to provide a diamond homoepitaxial lateral growth method to solve the problem of low quality diamond film prepared by the existing homoepitaxial growth method

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  • Homogeneous epitaxial lateral growth method for diamond
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  • Homogeneous epitaxial lateral growth method for diamond

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Embodiment Construction

[0035] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0036] The invention provides a diamond homoepitaxial lateral growth method, which uses a photolithography process to pattern the mask deposited on the surface of a single crystal diamond substrate to form homoepitaxial growth and lateral growth regions, and then adopts CVD method in the Epitaxial growth is carried out on the patterned single-crystal diamond substrate, and finally a low-dislocation, high-quality, and smooth-surfaced single-crystal diamond film is grown. This method can also obtain the single-crystal diamond microstructure film required by MEMS and the like.

[0037] The diamond used as the substrate can be natural diamond or artificial diamond, but it must be single crystal diamond. In a single crystal diamond substrate, there are different crystal planes (100), crystal planes (111), etc., and there may also be tilt angles at...

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Abstract

The invention discloses a homogeneous epitaxial lateral growth method for diamond. The method comprises the following steps: 1, depositing a mask layer on the bottom surface of a monocrystal diamond substrate; 2, patterning the surface, deposited with the mask layer, of the substrate, thus forming the substrate with a patterned surface, wherein the patterned surface of the substrate is divided into a homogeneous epitaxial growth area and a lateral growth area; and 3, carrying out homogeneous epitaxial diamond growth in the homogeneous epitaxial growth area, and carrying out lateral diamond growth in the lateral growth area. By combining with the lateral growth method, an existing homogeneous epitaxial growth technique of monocrystal diamond is improved; a monocrystal diamond film which is low in dislocation density, high in quality and smooth in surface can effectively grow; the difficulty in epitaxial growth of the monocrystal diamond film for an electronic device is reduced; the film quality is improved; and meanwhile, the technique can be applied to control over the growth structure of the monocrystal diamond film, so as to obtain a monocrystal diamond micro-structure required by MEMS and the like.

Description

technical field [0001] The invention belongs to the technical field of diamond chemical vapor deposition, and relates to a diamond homoepitaxial lateral growth method. Background technique [0002] Diamond has superior performance in heat, electricity, sound, light, etc. Among them, as a third-generation semiconductor material, diamond has very good bandgap width, critical breakdown electric field strength, saturation drift rate and mobility of carriers. Large, very small dielectric constant, especially suitable for high-frequency, high-voltage, high-power and other electronic devices. In addition, the superior performance of diamond films enables diamond electronic devices, MEMS, etc. to work in harsh working environments, so diamond films have extremely important application prospects in these fields. High-quality single-crystal diamond films are the basis for the superior performance of diamond devices. At present, the single crystal diamond homoepitaxial growth technol...

Claims

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Application Information

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IPC IPC(8): C30B25/20C30B29/04
Inventor 王宏兴李硕业王玮张景文卜忍安侯洵
Owner 王宏兴
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