2results about How to "Efficient doping" patented technology

The invention discloses a method for synthesizing intercalated doped graphene at low temperature, which comprises the following steps: S1, providing a semiconductor substrate, forming a copper interconnection structure on the semiconductor substrate, and exposing the surface of the copper interconnection structure and the surface of an insulating medium surrounding the copper interconnection structure together; s2, annealing pretreatment is carried out on the semiconductor substrate, an oxide layer on the surface of the semiconductor substrate is removed, and a catalytic surface is exposed; s3, benzene / acetylene is used as mixed carbon source gas, Ar / H2 is used as auxiliary gas, reaction is carried out at the temperature of 300-400 DEG C, and a plurality of graphene layers selectively grow on the surface of the copper interconnection structure; and S4, performing post-intercalation doping treatment on the graphene layer to form an intercalation doping structure. Graphene selectively grows on the copper interconnection surface at low temperature through the benzene / acetylene mixed carbon source, photoetching or transferring is not needed, and damage to the device structure is avoided; the efficient and stable doping of the multilayer graphene is realized through the gas phase intercalation, the conductivity of the graphene layer is improved, and the reliability of the device is improved.

The utility model relates to the technical field of semiconductor material preparation, and disclose a kind of N type high-purity silicon target material red phosphorus doping device, including reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, reaction chamber adopts quartz material double-layer structure, the inner wall of reaction chamber is provided with silicon nitride coating, the outer wall of reaction chamber is provided with vacuum pump set, rotating support mechanism includes high-temperature ceramic support, magnetic fluid seal shaft and brushless motor, high-temperature ceramic support is connected with the output end of brushless motor by magnetic fluid seal shaft, by integrated reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, by rotating dynamic doping, intelligent temperature control and waste gas circulation technology, significantly improve the uniformity of doping and raw material utilization rate, realize the efficient, uniform doping of silicon target material.