5results about How to "Efficient doping" patented technology

The invention discloses a method for synthesizing intercalated doped graphene at low temperature, which comprises the following steps: S1, providing a semiconductor substrate, forming a copper interconnection structure on the semiconductor substrate, and exposing the surface of the copper interconnection structure and the surface of an insulating medium surrounding the copper interconnection structure together; s2, annealing pretreatment is carried out on the semiconductor substrate, an oxide layer on the surface of the semiconductor substrate is removed, and a catalytic surface is exposed; s3, benzene / acetylene is used as mixed carbon source gas, Ar / H2 is used as auxiliary gas, reaction is carried out at the temperature of 300-400 DEG C, and a plurality of graphene layers selectively grow on the surface of the copper interconnection structure; and S4, performing post-intercalation doping treatment on the graphene layer to form an intercalation doping structure. Graphene selectively grows on the copper interconnection surface at low temperature through the benzene / acetylene mixed carbon source, photoetching or transferring is not needed, and damage to the device structure is avoided; the efficient and stable doping of the multilayer graphene is realized through the gas phase intercalation, the conductivity of the graphene layer is improved, and the reliability of the device is improved.

The utility model relates to the technical field of semiconductor material preparation, and disclose a kind of N type high-purity silicon target material red phosphorus doping device, including reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, reaction chamber adopts quartz material double-layer structure, the inner wall of reaction chamber is provided with silicon nitride coating, the outer wall of reaction chamber is provided with vacuum pump set, rotating support mechanism includes high-temperature ceramic support, magnetic fluid seal shaft and brushless motor, high-temperature ceramic support is connected with the output end of brushless motor by magnetic fluid seal shaft, by integrated reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, by rotating dynamic doping, intelligent temperature control and waste gas circulation technology, significantly improve the uniformity of doping and raw material utilization rate, realize the efficient, uniform doping of silicon target material.

The invention provides a preparation method of photosensitive nanoparticles, a photoresist solution and a two-photon pattern. A metal oxygen cluster with a metal core and an organic shell containing a carboxylic acid group is subjected to an acid ligand exchange reaction, so that an acid ligand with a photo-initiation effect is introduced into the metal oxygen cluster, the photosensitive nano-particles are obtained, the particle size is small, the photosensitive nano-particles have photosensitivity, the miscibility with a photoresist matrix is good, and the extremely small particle size can still be kept after mixing; therefore, the two-photon photoresist can be used as a filler to form a photoresist solution to obtain a high-quality two-photon pattern.

The present invention provides an organic semiconductor element, a strain sensor, a vibration sensor, and a method for manufacturing an organic semiconductor element that can obtain a desired resistance with a simple structure. In the vibration sensor, an organic semiconductor element (14) is formed on the surface of a flexible substrate (12). The organic semiconductor element (14) includes an organic semiconductor film (24) formed by forming a single crystal of an organic semiconductor into a film shape and a dopant film (25) formed on the surface of the organic semiconductor film (24). The dopant film (25) forms a charge transfer complex between a dopant constituting the dopant film (25) and an organic semiconductor of the organic semiconductor film (24), forming a doping layer (26) in which carriers are injected into the surface of the organic semiconductor film (24).

The invention discloses a nitrogen-doped carbon dot based on grapefruit endocarp, which is characterized in that the grapefruit endocarp and 2-methylimidazole are used as raw materials, the nitrogen-doped carbon dot NPP-CPDs is obtained through hydrothermal reaction, filtration, dialysis and freeze drying, the size is 10-20nm, and the nitrogen-doped carbon dot NPP-CPDs has a fluorescence emission peak; the surfaces of the carbon dots are loaded with imidazolyl, carboxyl and hydroxyl, and nitrogen sites can be stably coordinated with Zn < 2 + >. The preparation method comprises the following steps: 1, pretreating the pomelo endocarp PP; 2, preparation of R-NPP-CPDs (N, N-dimethylformamide); and (3) purifying the R-NPP-CPDs. According to the NPP-CPDs zinc ion battery electrolyte additive, the concentration of NPP-CPDs is 100-800 mg L <-1 >, and stable Zn-N bonds are formed by the NPP-CPDs and Zn < 2 + > on the surface of a zinc negative electrode through coordination; and the cycle performance of the zinc-zinc symmetric battery is 1400 to 1600 hours.