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N-type high-purity silicon target red phosphorus doping device

The utility model relates to the technical field of semiconductor material preparation, and disclose a kind of N type high-purity silicon target material red phosphorus doping device, including reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, reaction chamber adopts quartz material double-layer structure, the inner wall of reaction chamber is provided with silicon nitride coating, the outer wall of reaction chamber is provided with vacuum pump set, rotating support mechanism includes high-temperature ceramic support, magnetic fluid seal shaft and brushless motor, high-temperature ceramic support is connected with the output end of brushless motor by magnetic fluid seal shaft, by integrated reaction chamber, rotating support mechanism, phosphorus vapor injection system, partition temperature control module, gas circulation unit and intelligent control system, by rotating dynamic doping, intelligent temperature control and waste gas circulation technology, significantly improve the uniformity of doping and raw material utilization rate, realize the efficient, uniform doping of silicon target material.
Owner:NING XIA NING LAI XIN CAI LIAO KE JI YOU XIAN GONG SI