The utility model relates to the technical field of
semiconductor material preparation, and disclose a kind of N type high-purity
silicon target material red
phosphorus doping device, including
reaction chamber, rotating support mechanism,
phosphorus vapor injection
system, partition
temperature control module, gas circulation unit and
intelligent control system,
reaction chamber adopts
quartz material double-layer structure, the inner wall of
reaction chamber is provided with
silicon nitride coating, the outer wall of reaction chamber is provided with
vacuum pump set, rotating support mechanism includes high-temperature
ceramic support, magnetic fluid seal shaft and brushless motor, high-temperature
ceramic support is connected with the output end of brushless motor by magnetic fluid seal shaft, by integrated reaction chamber, rotating support mechanism,
phosphorus vapor injection
system, partition
temperature control module, gas circulation unit and
intelligent control system, by rotating dynamic
doping, intelligent
temperature control and
waste gas circulation technology, significantly improve the uniformity of
doping and
raw material utilization rate, realize the efficient, uniform doping of
silicon target material.