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Efficient gallium oxide doping method based on unbalanced laser plasma

A laser plasma and plasma technology, which is applied to the field of high-efficiency doping of gallium oxide in plasma, can solve the problems of low doping activation efficiency and high temperature, and achieve the improvement of growth quality, fast growth speed and free carrier concentration. Effect

Pending Publication Date: 2021-08-06
XIDIAN UNIV
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Problems solved by technology

However, the doping activation efficiency in MOCVD, MBE or HVPE is usually low due to the strong Ga vacancies being compensated at high n-type doping concentrations, and the temperature required for doping activation for conventional thin film growth is also high, this factor also becomes the limiting Ga 2 o 3 Bottleneck of free carrier concentration in

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  • Efficient gallium oxide doping method based on unbalanced laser plasma
  • Efficient gallium oxide doping method based on unbalanced laser plasma
  • Efficient gallium oxide doping method based on unbalanced laser plasma

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Embodiment 1

[0028] Since gallium oxide materials have a much larger band gap than semiconductor materials such as silicon, germanium, and gallium nitride, it is difficult to achieve high-efficiency activation after doping through existing process methods. Therefore, this embodiment provides a method based on unbalanced The gallium oxide high-efficiency doping method of laser plasma, the method of this embodiment, adopts the pulsed laser deposition process (PLD), grows the doped gallium oxide epitaxial layer on the gallium oxide substrate, so that the growth rate of the doped gallium oxide epitaxial layer It is faster, and the laser is used to bombard the doped gallium oxide target to obtain the doped gallium oxide plasma. The plasma has its own energy (kinetic energy and thermal energy), which is easy to activate the doping.

[0029] See figure 1 , figure 1 It is a flow chart of an efficient gallium oxide doping method based on non-equilibrium laser plasma provided by an embodiment of th...

Embodiment 2

[0049] This embodiment takes the Sn-doped gallium oxide epitaxial layer as an example to describe the method of Embodiment 1 in detail, wherein the Sn doping concentration is 4.89×10 20 cm -3 .

[0050] Specifically, please refer to Figure 2a-Figure 2b , Figure 2a-Figure 2b It is a process flow diagram of an efficient gallium oxide doping method based on non-equilibrium laser plasma provided by an embodiment of the present invention. As shown in the figure, in this embodiment, the method includes the following steps:

[0051] Step 1: Put the gallium oxide substrate into the H with a volume ratio of 3:1 2 SO 4 and H 2 o 2 Etched in the mixed solution (piranha etching solution) for 40s, and then washed three times with deionized water;

[0052] Step 2: Put the etched and cleaned gallium oxide substrate into a muffle furnace for annealing treatment, the annealing temperature is 850°C, the heating rate is 10°C / min, and the annealing time is 10min, to obtain the gallium ox...

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Abstract

The invention relates to an efficient gallium oxide doping method based on unbalanced laser plasma. The efficient gallium oxide doping method comprises the following steps of: carrying out surface pretreatment on a gallium oxide substrate; and growing a doped gallium oxide epitaxial layer on the gallium oxide substrate after surface pretreatment by using a pulse laser deposition process. According to the efficient gallium oxide doping method based on unbalanced laser plasma, a pulse laser deposition process is adopted, the doped gallium oxide epitaxial layer is grown on the gallium oxide substrate, and a doped gallium oxide target material is induced to be plasmonized based on laser induction, so that impurities do not enter gallium oxide in an atomic form, instead, the impurities enter the gallium oxide in a non-equilibrium plasma state, thus the doping activation temperature can be reduced, the activation efficiency of doped carriers is greatly improved, efficient doping of gallium oxide is realized, the doping efficiency and free carrier concentration of Ga2O3 are improved, an efficient doped gallium oxide epitaxial layer film is formed, and the performance of subsequent devices is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, and in particular relates to a gallium oxide high-efficiency doping method based on non-equilibrium laser plasma. Background technique [0002] Gallium oxide (Ga 2 o 3 ) as a new type of ultra-wide bandgap semiconductor has a large energy band gap (about 4.9eV), high theoretical breakdown electric field (8MV / cm) and Baliga figure of merit, and its excellent performance makes gallium oxide the next generation Hot spot material for high power electronic devices. [0003] With the deepening of research, how to prepare high-quality gallium oxide thin films has become a concern of researchers. So far, the commonly used gallium oxide thin film growth methods include: Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE) and Molecular Beam Epitaxy (MBE). However, the doping activation efficiency in MOCVD, MBE or HVPE is usually low due to the st...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/0243H01L21/02658H01L21/02565H01L21/02617
Inventor 马晓华陆小力郑雪峰王旭何云龙郝跃
Owner XIDIAN UNIV
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