Efficient gallium oxide doping method based on unbalanced laser plasma

A laser plasma and plasma technology, which is applied to the field of high-efficiency doping of gallium oxide in plasma, can solve the problems of low doping activation efficiency and high temperature, and achieve the improvement of growth quality, fast growth speed and free carrier concentration. Effect

Pending Publication Date: 2021-08-06
XIDIAN UNIV
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Problems solved by technology

However, the doping activation efficiency in MOCVD, MBE or HVPE is usually low due to the strong Ga vacancies being compensated at high n-type doping concentrations, and the tempe

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  • Efficient gallium oxide doping method based on unbalanced laser plasma
  • Efficient gallium oxide doping method based on unbalanced laser plasma
  • Efficient gallium oxide doping method based on unbalanced laser plasma

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Example Embodiment

[0027] Example one

[0028] Since the gallium oxide material is larger than silicon, germanium, gallium nitride and other semiconductor materials are large, it is difficult to achieve efficient activation through existing process methods, and therefore, this embodiment provides a non-balanced Laser plasma gallium oxide high-efficiency doping method, the method of the present embodiment, using a pulsed laser deposition process (PLD), growing the gallium oxide epitaxial layer on the gallium oxide substrate, resulting in a growth rate of the gallium oxide epitaxial layer Faster, and use laser bombardment to blend the gallium oxide target to obtain a doped gallium oxide plasma, a plasma self-belt energy (kinetic energy and thermal energy), which is easy to activate doping.

[0029] See figure 1 , figure 1 It is a flow chart of an efficient doping method based on the gallium oxide laser plasma provided by the embodiment of the present invention. As shown, the method of the present embo...

Example Embodiment

[0048] Example 2

[0049] In this example, the method of extension of the Sn-doped oxide is an example of the first embodiment, wherein the Sn doping concentration is 4.89 × 10 20 cm -3 .

[0050] Specifically, please refer to Figure 2A-Figure 2B , Figure 2A-Figure 2B It is a process flow diagram of an efficient doping method based on the gallium oxide of a non-balanced laser plasma according to an embodiment of the present invention, as shown, in the present embodiment, the method comprising the steps of:

[0051] Step 1: Put the gallium oxide substrate into a volume ratio of 3: 1 h 2 SO 4 Ho 2 O 2 The mixed solution (eating people in etch) was etched 40s, followed by cleaning three times with deionized water;

[0052] Step 2: Place the gallium oxide substrate after etching into the muffle in an annealing treatment, an annealing temperature of 850 ° C, the temperature rise rate is 10 ° C / min, the annealing time is 10 min, resulting in the surface pre-pretreatment of gallium oxi...

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Abstract

The invention relates to an efficient gallium oxide doping method based on unbalanced laser plasma. The efficient gallium oxide doping method comprises the following steps of: carrying out surface pretreatment on a gallium oxide substrate; and growing a doped gallium oxide epitaxial layer on the gallium oxide substrate after surface pretreatment by using a pulse laser deposition process. According to the efficient gallium oxide doping method based on unbalanced laser plasma, a pulse laser deposition process is adopted, the doped gallium oxide epitaxial layer is grown on the gallium oxide substrate, and a doped gallium oxide target material is induced to be plasmonized based on laser induction, so that impurities do not enter gallium oxide in an atomic form, instead, the impurities enter the gallium oxide in a non-equilibrium plasma state, thus the doping activation temperature can be reduced, the activation efficiency of doped carriers is greatly improved, efficient doping of gallium oxide is realized, the doping efficiency and free carrier concentration of Ga2O3 are improved, an efficient doped gallium oxide epitaxial layer film is formed, and the performance of subsequent devices is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, and in particular relates to a gallium oxide high-efficiency doping method based on non-equilibrium laser plasma. Background technique [0002] Gallium oxide (Ga 2 o 3 ) as a new type of ultra-wide bandgap semiconductor has a large energy band gap (about 4.9eV), high theoretical breakdown electric field (8MV / cm) and Baliga figure of merit, and its excellent performance makes gallium oxide the next generation Hot spot material for high power electronic devices. [0003] With the deepening of research, how to prepare high-quality gallium oxide thin films has become a concern of researchers. So far, the commonly used gallium oxide thin film growth methods include: Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE) and Molecular Beam Epitaxy (MBE). However, the doping activation efficiency in MOCVD, MBE or HVPE is usually low due to the st...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/0243H01L21/02658H01L21/02565H01L21/02617
Inventor 马晓华陆小力郑雪峰王旭何云龙郝跃
Owner XIDIAN UNIV
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