Growth method of high-quality high-speed monocrystal diamond film

Abstract

The invention discloses a growth method of a high-quality high-speed monocrystal diamond film. The growth method comprises the following step: growing the monocrystal diamond film under a condition with a fixed growth temperature on the surface of a monocrystal diamond substrate placed in a deposition cavity by a microwave plasma gas-phase deposition method, wherein reaction gases including methane, a hydrogen gas, a nitrogen gas and an oxygen gas are introduced into the deposition cavity, and an introduction mode of the nitrogen gas and the oxygen gas is an alternative introduction mode. The growth method disclosed by the invention solves technical problems that application of the monocrystal diamond film in the fields such as scientific research, optics, semiconductors and processing is limited as the color of the monocrystal diamond film grown in the prior art changes and is even changed into deeply brown, and crystal quality of the film is worsened.

Description

technical field [0001] The invention relates to the field of microwave plasma growth of diamond films, in particular to a growth method of high-quality and high-speed single-crystal diamond films. Background technique [0002] The production process of large-size synthetic single crystal diamond has always been a hot spot in industrial production and scientific research. Diamond is a very hard material with excellent thermal, electrical, acoustic, optical and mechanical properties, especially in scientific research, optics, semiconductors and processing. [0003] In the past two decades, diamond thin films have been developed through the Chemical Vapor Deposition (CVD) process. Chemical vapor deposition is a process technology in which a reactive gas undergoes a chemical reaction under gaseous conditions, and the reaction product is deposited on the surface of a heated solid substrate, thereby producing a solid material thin film. [0004] Later, the microwave plasma vapor...

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Problems solved by technology

[0008] The purpose of the present invention is to provide a high-quality and high-speed growth method for single crystal diamond films, which solves the problem of the color change of single crystal diamond films grown in the prior art, even dark brown, and the crystal quality of the film deteriorates, which limits the growth of single crystal diamond films. Technical aspects of the application of thin films in scientific research, optics, semiconductors and processing

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