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A kind of growth method of single crystal diamond thin film

A single crystal diamond, growth method technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of limiting the application of single crystal diamond thin film and the deterioration of crystal quality, etc.

Active Publication Date: 2016-04-06
西安德盟特半导体科技有限公司
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Problems solved by technology

[0007] The color of the grown single-crystal diamond film will change, even dark brown, and the quality of the crystal will also deteriorate, which greatly limits the application of single-crystal diamond film in scientific research, optics, semiconductor and processing.

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  • A kind of growth method of single crystal diamond thin film

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Embodiment Construction

[0016] The invention introduces a small amount of oxygen when growing a single crystal diamond film, can remove nitrogen impurities, reduce carbon vacancies formed near each nitrogen atom due to nitrogen doping, and reduce silicon and hydrogen impurity levels. In a word, the present invention can eliminate defects such as impurities and vacancies in the single crystal diamond film while maintaining a certain growth rate, not only forming a transparent and colorless single crystal diamond film, but also improving the quality of the single crystal diamond film.

[0017] A method for growing a single crystal diamond thin film of the present invention, comprising: controlling the temperature of the diamond growth surface so that the temperature gradient of the diamond growth surface is less than 20°C; A single-crystal diamond film is grown by microwave plasma vapor deposition under a certain growth temperature, and reaction gases are introduced into the deposition chamber. The gase...

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Abstract

The invention discloses a growth method of a high-quality high-speed monocrystal diamond film. The growth method comprises the following step: growing the monocrystal diamond film under a condition with a fixed growth temperature on the surface of a monocrystal diamond substrate placed in a deposition cavity by a microwave plasma gas-phase deposition method, wherein reaction gases including methane, a hydrogen gas, a nitrogen gas and an oxygen gas are introduced into the deposition cavity, and an introduction mode of the nitrogen gas and the oxygen gas is an alternative introduction mode. The growth method disclosed by the invention solves technical problems that application of the monocrystal diamond film in the fields such as scientific research, optics, semiconductors and processing is limited as the color of the monocrystal diamond film grown in the prior art changes and is even changed into deeply brown, and crystal quality of the film is worsened.

Description

technical field [0001] The invention relates to the field of growing diamond films by microwave plasma, in particular to a method for growing single crystal diamond films. Background technique [0002] The production process of large-size synthetic single crystal diamond has always been a hot spot in industrial production and scientific research. Diamond is a substance with great hardness. It has excellent properties in heat, electricity, sound, light and mechanics. It is especially widely used in scientific research, optics, semiconductor and processing fields. [0003] In the past two decades, diamond thin films have been developed by chemical vapor deposition (Chemical Vapor Deposition, CVD for short) process. Chemical vapor deposition is a process technology in which a reaction gas undergoes a chemical reaction under gaseous conditions, and the reaction product is deposited on the surface of a heated solid substrate, thereby producing a thin film of solid material. [...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/04C30B25/16
Inventor 王宏兴
Owner 西安德盟特半导体科技有限公司
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