4results about How to "Increase electrode area" patented technology

The invention relates to a production process of a capacitor chip, which comprises the following steps of: etching a silicon substrate to form a bottle-shaped groove structure, and forming an upper electrode and a lower electrode with convex shapes in a groove through the steps of depositing silicon crystal grains, implanting ions, forming an intermediate dielectric layer, etching the intermediate dielectric layer and depositing a conductive layer; and hole etching is carried out on gaps among the three adjacent trench capacitors, and a heat dissipation insulating material is deposited to form a heat dissipation isolation structure. According to the invention, the bottle-shaped groove is formed through two etching processes, and the capacitance value of the chip is further improved in combination with the convex structure of the electrode; in addition, by forming a heat dissipation isolation structure, the chip integration density is improved, the heat dissipation performance of the capacitor chip is improved, and meanwhile the electrical insulation performance between capacitors is further improved.

The application provides a method for electrochemical water softening, which adopts an electrochemical device with a cathode and an anode to treat wastewater, the wastewater is fed into the cathode and discharged from the anode, and the cathode is a corrugated electrode. The corrugated electrode is a sawtooth corrugated electrode with a sawtooth surface or a wave corrugated electrode with a wave surface. In the electrochemical water softening method, the hydrogen bubble generation and release of the cathode are utilized to have a certain mechanical peeling effect on the scale layer, and due to the special structure of the electrode surface, the hydrogen bubble has a certain pushing force outward, so that the scale layer can be taken away from the surface of the substrate, thereby preventing the scale layer from depositing on the cathode, which not only prolongs the service life of the cathode but also enables the cathode to have a certain self-cleaning ability. The corrugated electrode adopted in the application can make the scale not deposit on the surface of the cathode but crystallize and grow in water, relieve the scale deposition speed on the surface of the electrode, and reduce the energy consumption in the reaction process.

The present invention discloses an electrolytic corrosion sample, a plastic embedding auxiliary device and a sample preparation method. The sample is embedded in plastic. There is a circle of continuous conductive material along the circumferential outer surface of the plastic. The conductive material is connected to the sample through a conductor, and the conductor is embedded in the plastic. The plastic embedding auxiliary device includes a conductive, elastic, C-shaped ring body pre-bent into the shape of the letter C and a nickel belt. One end of the nickel belt is connected to the sample, and the other end is connected to the C-shaped ring body. When preparing the electrolytic corrosion sample, an external force is applied to reduce the outer diameter of the C-shaped ring body, and then the C-shaped ring is placed in the steel mold sleeve cavity of the embedding machine. The observation surface of the sample is close to the bottom surface of the steel mold sleeve cavity of the embedding machine, and the external force is removed. Finally, the general plastic embedding process is performed. The present invention solves the problems of difficulty in turning on the power supply and uneven corrosion after conventional plastic embedding samples.

The ceramic dielectric chip, capacitor and preparation method with an external chamfered disc-shaped structure provided by the present invention include a ceramic dielectric body and a pair of electrodes arranged on the front and back sides of the ceramic dielectric body. The main body of the ceramic dielectric body is cylindrical; the front and back sides of the ceramic dielectric body form symmetrical grooves corresponding to the coverage area of ​​the pair of electrodes, and the electrode is an electrode coating formed on the bottom surface of the groove by a sputtering process; the top surface of the groove is higher than the outer edge of the ceramic dielectric body, so that the outer edge of the ceramic dielectric body forms a chamfered structure. Compared with the prior art, the electrode is an electrode coating formed on the bottom surface of the groove by a sputtering process, and the peripheral height prevents edge breakdown. The sputtering mask can make the electrodes at both ends of the chip face each other, achieving the maximum electrode facing area, thereby obtaining the maximum capacitance. The facing of the electrodes also makes the electric field reach the most uniform state, which can effectively solve the problems of poor product withstand voltage caused by electrode asymmetry.