126results about How to "Increase electrode area" patented technology

A manufacturing method of electronic components includes forming a first insulation layer on a substrate, forming a plurality of passive elements on the first insulation layer, forming a second insulation layer on the passive elements, forming a plurality of conductor layers electrically connected to the respective passive elements, on the outer side of the second insulation layer to be exposed to an upper surface of each electronic component, and forming grooves between the electronic components including the respective passive elements to expose side surfaces of each electronic component and parts of the conductor layers from the side surfaces of each electronic component. The manufacturing method further including plating a plurality of external electrodes on the respective conductor layers exposed to the upper surface and the side surfaces of each electronic component, and cutting the substrate to completely separate into individual electronic components.

Disclosed is an integrated circuit comprising a substrate (10) carrying plurality of circuit elements (20); a plurality of sensing electrodes (34) over said substrate, each sensing electrode being electrically connected to at least one of said circuit elements; and a plurality of wells (50) for receiving a sample, each sensing electrode defining the bottom of one of said wells, wherein each sensing electrode comprises at least one portion (34′) extending upwardly into said well. A method of manufacturing such an IC is also disclosed.

An energy storage stack of at least two surface-mediated cells (SMCs) internally connected in parallel or in series. The stack includes: (A) At least two SMC cells, each consisting of (i) a cathode comprising a porous cathode current collector and a cathode active material; (ii) a porous anode current collector; and (iii) a porous separator disposed between the cathode and the anode; (B) A lithium-containing electrolyte in physical contact with all the electrodes, wherein the cathode active material has a specific surface area no less than 100 m²/g in direct physical contact with the electrolyte to receive lithium ions therefrom or to provide lithium ions thereto; and (C) A lithium source. This new-generation energy storage device exhibits the highest power densities of all energy storage devices, much higher than those of all the lithium ion batteries, lithium ion capacitors, and supercapacitors.

A capacitor includes a first electrode and a second electrode arranged so that a main surface of the first electrode opposes a main surface of the second electrode, a first pseudo electrode layer disposed on the main surface of the first electrode, and a dielectric layer disposed between the first pseudo electrode layer and the main surface of the second electrode. The first pseudo electrode layer includes conductive particles electrically coupled to the first electrode.

A short-circuit between a positive electrode and a negative electrode due to a deposit on an electrode plate is prevented in a power storage unit such as a lithium-ion secondary battery. An electrode plate is covered by a folded insulating sheet. Bonding is performed on facing edges of the sheet which overlap with each other in a portion outer than the electrode plate. One or more openings are formed in the electrode plate, and the facing edges of the folded sheet are bonded to each other also in the opening. Such a bonding portion enables the sheet to be in closer contact with the electrode plate and prevents the displacement between the sheet and the electrode plate. When the electrode plate is deformed or vibrated, the sheet can be rubbed against a surface of the electrode plate, thereby removing a deposit from the surface of the electrode plate.

An applicator includes at least one RF electrode coupled to an RF generator. The at least one RF electrode has protrusions each with a curvature radius which is equal to or greater than a curvature radius of an outer edge of the at least one RF electrode.

A Peltier module comprising a plurality of thermoelectric semiconductor elements between substrates in connection with electrodes. It is manufactured by four steps, namely, an application step in which a resist onto the substrate, a hollow formation step in which the resist is deformed into a resist pattern having a lattice-like shape and a plurality of hollows, an electrode formation step in which the electrodes are formed in the hollows of the resist pattern, and a removal step in which the resist pattern is removed from the substrate, wherein the resist is made of an acrylic resist including acrylic polymer, multifunctional acrylate, and photosensitive agent. The electrodes are formed and arranged by use of the resist pattern having the hollows in such a way that an aspect ratio D/S, which is defined using an electrode thickness D and an inter-electrode space S, is set to 1.25 or more.

A portable power tool comprises an electric motor, actuator, or light-emitting hardware and a rechargeable power source connected to the electric motor, actuator, or light-emitting hardware, wherein the power source contains at least a surface-mediated cell (SMC). The power tools include, but are not limited to, impact driver, air compressor, alligator shear, angle grinder, band saw, belt sander, biscuit joiner, ceramic tile cutter tile saw, chainsaw, circular saw, concrete saw, cold saw, crusher, diamond blade, diamond tools, disc sander, drill, floor sander, grinding machine, heat gun, impact wrench, jackhammer, jointer, jigsaw, lathe, miter saw, nail gun, needle scaler, torque wrench, powder-actuated tools, power wrench, radial arm saw, random orbital sander, reciprocating saw, rotary reciprocating saw, rotary tool, sabre saw, sander, scroll saw, steel cut off saw, table saw, thickness planer, trimmer, wall chaser, wood router, or flashlight.

A first SiO₂ thin film, a tungsten gate electrode, and a second SiO₂ thin film are selectively formed on a first n⁺-type GaN contact semiconductor layer in that order and in a multilayer film structure having the three layers, a stripe-shaped opening is formed. Via the opening, an undoped GaN channel semiconductor layer and the second n⁺-type GaN contact semiconductor layer are formed so that both the layers are regrown by, for example, metal organic chemical vapor deposition. A source electrode and a drain electrode are formed so as to contact the corresponding second and first n⁺-type GaN contact semiconductor layers. The regrown undoped GaN channel semiconductor layer and the regrown second n⁺-type GaN contact semiconductor layer are horizontally grown portions and hence, the contact area of the electrode can be made larger than the area of the opening.

The invention belongs to the water processing technology field, concretely provides a device and a technology for processing degradation-resistant waste water through a hypergravity multistage sacrificial anode electro-Fenton method, and solves the problem of mass transfer limitation in processing degradation-resistant waste water through a sacrificial anode electro-Fenton method. The device comprises a plurality of corrugated cylindrical anodes and anode connection disks and a plurality of corrugated cylindrical cathodes and cathode connection disks. The corrugated cylindrical cathodes and the cathode connection disks are stationary relative to a shell. The centers of the anode connection disks are connected with a rotating shaft. In the technology, the rotary corrugated cylindrical anodes and anode connection disks, the stationary corrugated cylindrical cathodes and cathode connection disks and a H2O2 solution form a hypergravity multistage sacrificial anode electro-Fenton reaction system. The device and the technology can reinforce the mass transfer process of the electro-Fenton reaction. The electrode area utilization rate, the oxygen utilization rate, the H2O2 production rate and the processing efficiency are all raised. The device has advantages of small size, low load and low energy consumption, and is suitable for continuous operation and scale processing.

The invention relates to a charged membrane device for water processing. The device comprises a power supply, a membrane group device and a membrane assembly, wherein the membrane group device is groove-shaped, the upper portion and the lower portion of the membrane group device are open and the periphery of the membrane group device is sealed, the membrane assembly is arranged inside the membrane group device, and the outer surface of a hollow fiber membrane wire is coated with a layer of outer tubular supporting layer having a mesh multi-hole structure to form a hollow fiber membrane. When the device is applied in an immersion type membrane separation technology, under the action of current of the power supply, the hollow fiber membrane wire is shielded by the negative electrode of the outer tubular supporting layer, and pollutants with negative electricity can hardly pollute the hollow fiber membrane under the action of electrostatic repulsive force and the flocculation of an electrode dissolution flocculating agent, so that membrane pollution is controlled. The charged membrane device having an anti-pollution function and capable of generating the flocculating agent can control membrane pollution effectively and has the advantages of being high in stain resistance, high in strength of the membrane wire, free of addition of the flocculating agent, capable of purifying waterquality, practical and the like.

A semiconductor device includes capacitors formed on the surface of an interlayer insulating film in connection with capacitive contact plug, wherein capacitors are constituted of base-side lower electrode films having hollow-pillar shapes, metal plugs embedded in hollows of base-side lower electrode films, and top-side lower electrode films having hollow-pillar shapes engaged with the upper portions of the hollows as well as dielectric films and upper electrode films which are sequentially laminated so as to cover the peripheral surfaces of the base-side and top-side lower electrode films and the interior surfaces of the top-side lower electrode films. Side walls are further formed to connect together the adjacent base-side lower electrode films. Thus, it is possible to control the aspect ratio of a capacitor hole for embedding the metal plug from being excessively increased, and it is possible to increase the capacitive electrode area of each capacitor.