Process for growing P-type ZnO crystal film by real-time doping nitrogen

Abstract

A process for growing P-type ZnO crystal film by real-time doping of nitrogen includes washing substrate, putting it in reaction chamber of sputter equipment, vacuumizing heating, substrate to 200-600 deg.c, introducing the mixture of high-purity NH3 and O2, and sputter growing with high-purity Zn as target under 1-10 MPa.

Description

technical field [0001] The invention relates to a doping method of p-type ZnO. Specifically, it relates to a method for growing p-type ZnO crystal thin films by doping nitrogen in real time. Background technique [0002] To realize the application of ZnO-based devices, it is necessary to prepare controllable n- and p-type ZnO crystal thin films. At present, the research on n-type ZnO crystal thin films has been relatively sufficient. By doping III-valent elements, real-time, concentration-controllable and low-resistance n-type ZnO crystal thin films can be grown. However, in order to prepare ZnO crystal thin films for optoelectronic devices, ZnO pn junctions must be prepared. Due to the existence of many intrinsic donor defects in ZnO, such as interstitial zinc Zn i and vacancy oxygen V O , and its energy levels are located at the bottom of the conduction band at 0.05eV and 0.3eV, which produces a high degree of self-compensation for the acceptor....

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Problems solved by technology

The latter two doping effects are not ideal due to the deep acceptor energy level and low solid solubility, and both arsenic and phosphorus are toxic

The first two use highly active nitrogen doping and co-doping of gallium and nitrogen. Since the activity of nitrogen is very low and the atomic radius is larger than that of oxygen atoms, chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) are used to grow technology, it is difficult to replace the position of oxygen atoms, and it is impossible to achieve real-time controllable nitrogen doping

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