Method for growing Na doping p type ZnO crystal thin film

A crystal and thin film technology, applied in the field of growth of p-type ZnO crystal thin films, to achieve the effect of good electrical properties

Inactive Publication Date: 2010-01-20
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The PLD method has the advantages of lower substrate temperature, easy control of deposition parameters, easy to keep the composition of the film and the target consistent, and the quality of the grown film is better, but this method has not been used to grow Na-doped p-type ZnO films.

Method used

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  • Method for growing Na doping p type ZnO crystal thin film
  • Method for growing Na doping p type ZnO crystal thin film
  • Method for growing Na doping p type ZnO crystal thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1) get the zinc oxide and sodium carbonate powder that purity is 99.99%, and Na molar content is 0.5%, ZnO and Na 2 CO 3 Pour the mixed powder into an agate ball cup, put it on a ball mill and carry out ball milling, and the time of ball milling is four hours. There are two purposes of ball milling: the first is to combine ZnO, Na 2 CO 3 The powder is mixed evenly to ensure the uniformity of the prepared target. Secondly, in order to combine ZnO and Na 2 CO 3 Powder refinement for subsequent ZnO and Na 2 CO 3 Forming and sintering of mixed powders.

[0020] After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 4 cm. Then pre-sintered at 800°C for 2 hours and sintered at 1250°C for 3 hours to ensure that Na 2 CO 3 decomposition.

[0021] 2) Using quartz as the substrate, clean the surface of the substrate and put it into the growth chamber of the pulsed laser deposition device. The vacuum degree of the growth chamber ...

Embodiment 2

[0027] 1) get the zinc oxide and sodium carbonate powder that the purity is 99.99%, the Na molar content is 1.0%, ZnO and Na 2 CO 3 Pour the mixed powder into an agate ball cup, put it on a ball mill and carry out ball milling, and the time of ball milling is four hours. After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 4 cm. Then pre-sinter at 600°C for 2 hours and sinter at 1400°C for 3 hours.

[0028] 2) Take glass as the substrate, clean the substrate surface and put it into the growth chamber of the pulsed laser deposition device, and the vacuum degree of the growth chamber is pumped to 5×10 -3 Pa, and then heat the substrate so that the substrate temperature is 550°C to dope Na 2 The ZnO of O is used as the target, the distance between the substrate and the target is adjusted to 5cm, and the pure O 2 For the growth atmosphere, control O 2 The pressure is 30pa, the laser frequency is 3Hz, and the laser operating voltage ...

Embodiment 3

[0031] 1) get zinc oxide and sodium carbonate powder with a purity of 99.99%, the Na molar content is 0.2%, ZnO and Na 2 CO 3 Pour the mixed powder into an agate ball cup, put it on a ball mill and carry out ball milling, and the time of ball milling is four hours. After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 4 cm. Then pre-sinter at 600°C for 2 hours and sinter at 1400°C for 3 hours.

[0032] 2) Take glass as the substrate, clean the substrate surface and put it into the growth chamber of the pulsed laser deposition device, and the vacuum degree of the growth chamber is pumped to 5×10 -3 Pa, and then heat the substrate so that the substrate temperature is 700°C to dope Na 2 The ZnO of O is used as the target, the distance between the substrate and the target is adjusted to 5cm, and the pure O 2 For the growth atmosphere, control O 2 The pressure is 30pa, the laser frequency is 3Hz, and the laser operating voltage is 27K...

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Abstract

The invention discloses a method for growing p type ZnO crystal thin film by doping Na, which adopts the pulsed laser sedimentation, the method comprises the following steps: firstly, mixing pure zinc oxide powder and sodium carbonate powder by ball-milling, then pressing to shape and sintering, preparing target material of ZnO doped with Na2O, secondly, in a growing chamber of a pulsed laser sedimentation device, taking the ZnO doped with Na2O as the target material, taking pure O2 as the growing atmosphere, controlling the pressure intensity of the O2 between 15pa and 45pa, controlling the laser frequency between 1 Hz and 5 Hz, and growing the p type ZnO crystal thin film on a substrate. The method of the invention can realize real time doping, and the doping concentration can be controlled by adjusting the growing temperature and the molar percentage of Na in the target material. The p type ZnO crystal thin film prepared by adopting the method of the invention has good electricity performance, repeatability and stability.

Description

technical field [0001] The invention relates to a growth method of p-type ZnO crystal thin film, especially a method for growing p-type ZnO crystal thin film by Na doping. Background technique [0002] As a wide bandgap semiconductor, ZnO has its unique advantages. The energy band width at room temperature is 3.37eV, and the exciton binding energy is 60meV, which is much larger than GaN's exciton binding energy of 25meV and room temperature molecular thermal kinetic energy of 26meV. Therefore, It has great potential to realize high-power semiconductor laser devices. However, an important step towards the application of ZnO in optoelectronic devices is to realize stable p-type ZnO thin films. ZnO due to various intrinsic defects, such as Zn i , Zn o , and unintentional doping defects such as H i , showing n-type. Incorporating acceptor impurities in ZnO will increase the Madelung energy of the system and cause a strong donor compensation effect at the same time. Finding...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/16
Inventor 叶志镇林时胜曾昱嘉赵炳辉陈凌翔顾修全
Owner ZHEJIANG UNIV
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