46 results about "Unintentional doping" patented technology

The invention discloses a light emitting diode (LED) and a manufacturing method thereof. The LED comprises a substrate, a buffer layer, an unintentional doping layer, a first doping layer, a first heavy doping layer, a first ohmic contact layer, a first high doping layer, a first isolation layer, a second doping layer, a first current blocking layer, an active region, a second current blocking layer, a third doping layer, a second ohmic contact layer, a transparent conductive layer, a first electrode, a second electrode and a third electrode, wherein the second doping layer comprises a first platform, the first high doping layer comprises a second platform, the first ohmic contact layer comprises a third platform, the first platform, the second platform and the third platform are differentin surface roughness, the first electrode directly contacts with the first platform, the second platform and the third platform, and the first electrode and the second electrode realize electrical isolation through a second protection layer. The LED is advantaged in that the manufacturing process is simple, manufacturing cost of chips is reduced, and a current congestion problem of the LED is effectively solved.

The invention discloses a three-family nitride-based phototransistor detector and a manufacturing method thereof. The phototransistor detector comprises a substrate (101), a buffering layer or transition layer (102), an unintentional doping layer (103), a donor doping layer (104), a secondary unintentional doping layer (105), an acceptor doping layer (106), an acceptor and donor co-doping layer (107), a third unintentional doping layer (108), an alloy component gradient layer (109), a donor doping layer made of a material with a larger forbidden bandwidth, and a contact layer (111) in sequence from bottom to top. The three-family nitride-based phototransistor detector provided by the invention has the advantages of low defect density, low working voltage, high grain, low dark current, high probing sensitivity and the like.

An indium gallium nitride or gallium nitride multi-quantum-well solar cell comprising a low-temperature insert layer comprises a substrate, a low-temperature nucleating layer which is manufactured on the substrate, an unintentional doping gallium nitride buffering layer which is manufactured on the low-temperature nucleating layer, an n type doping gallium nitride layer which is manufactured on the unintentional doping gallium nitride buffering layer, an unintentional doping multi-quantum-well layer which is manufactured on one side above the n type doping gallium nitride layer, a p type doping gallium nitride layer which is manufactured on the unintentional doping multi-quantum-well layer, an N type ohmic electrode which is manufactured on a platform surface of the n type doping gallium nitride layer and a P type ohmic electrode which is manufactured on the p type doping gallium nitride layer; the low-temperature nucleating layer provides a nucleation center for later growth of the gallium nitride materials; the platform surface is formed above the other side of the n type doping gallium nitride layer; the unintentional doping multi-quantum-well layer is an absorption layer of a indium gallium nitride solar cell. The indium gallium nitride or gallium nitride multi-quantum-well solar cell has the advantages of increasing absorption of incident light and improving the separating efficiency of carriers.

A III-nitride semiconductor luminescence diode based on a plane structure is provided with a nitride semiconductor buffer layer, a nitride semiconductor active layer and a nitride semiconductor contact layer on the substrate materials respectively, and two legato electrodes are arranged on the contact layer which is at the same side with the nitride semiconductor active layer; the buffer layer is the monolayer or multilayer structure with various components, the material of the buffer layer is nitride aluminum gallium and indium and the whole thickness thereof is between 0.01-100 Mum; and the buffer layer can adopt the unintentional doping, N-type doping or P-type doping during the growing period; the material of the active layer, the thickness of which is 0.001-10 Mum, is nitride aluminum gallium indium with the monolayer or multilayer structure of various components; the material of contact layer, the thickness of which is between 0.001-10 Mum, is nitride aluminum gallium indium with the monolayer or multilayer structure of various components, and the electrode is the schottky contact or ohmic contact electrode.

A preparation method for low-resistivity low-temperature P type aluminum gallium nitride materials comprises the following steps of step 1, warming a substrate and performing thermal treatment under the hydrogen material environment; step 2, enabling a layer of low-temperature nucleating layer to grow on the substrate and providing a nucleation center for follow-up epitaxial growth; step 3, enabling a layer of unintentional doping template layer to grow on the low-temperature nucleating layer; step 4, enabling a layer of P type aluminum gallium nitride layer with low carbon impurity concentration to grow on the unintentional doping template layer in a epitaxial mode under low temperature to form into an epitaxial wafer; step 5, annealing the epitaxial wafer with high temperature under nitrogen environment to enable an acceptor in the P type aluminum gallium nitride layer to be active and obtain the P type aluminum gallium nitride layer materials with low resistivity. The preparation method for the low-resistivity low-temperature P type aluminum gallium nitride materials can reduce the concentration of unintentional doping carbon impurities in the low-temperature developed P type aluminum gallium nitride materials, accordingly relieving the acceptor compensation function and achieving the purpose of reducing the P type material resistivity.