3 results about "Unintentional doping" patented technology

The invention discloses a comprehensive two-dimensional vertical structure metal-semiconductor field effect transistor and a preparation method thereof. A source electrode, a lower isolation layer, a drain electrode and an upper isolation layer which are vertically stacked are formed on the surface of a substrate, an inclined side wall is formed, a channel covers the inclined side wall, a grid electrode and the channel are self-aligned, and a semi-metal grid electrode and a semiconductor channel are in direct contact to form a Schottky junction; based on a comprehensive two-dimensional material system, the Fermi pinning effect and unintentional doping are effectively inhibited, and the performance of the device is optimized by optimizing the grid control capability and the electric contact performance; a gate dielectric layer is not arranged, so that the problems of electrical performance deterioration and the like under a limit miniature scale are avoided; the integration density of the device is improved and the research and development and manufacturing cost is controlled while excellent performance is kept; the channel length and the contact length are synchronously and accurately reduced by utilizing a side wall vertical structure; the method is applied to the industrial application fields of next-generation integrated circuit chips, high-density memories, flexible and wearable electronics and the like which break through the silicon-based physical limit.

This disclosure provides a semiconductor device and electronic device in which the drift region is made of AlN, which can improve the device's breakdown voltage or reduce the drift region thickness at the same breakdown voltage, thereby reducing on-resistance and epitaxial cost and difficulty. At least one of the following is formed between the drift region and the source metal through distributed polarization doping: an N+ type AlGaN current extension layer, a P- type body region, and an N+ type source ohmic contact region. Since the Al composition content in at least one of these three layers gradually changes away from the N++ type conductive substrate, a certain concentration of electrons or holes is induced through the polarization effect, which can increase the electron or hole concentration of the corresponding layer. That is, at least one layer is a high carrier concentration layer formed by unintentional doping, which can optimize current distribution and reduce device on-resistance. Since at least one of the above three layers is formed by distributed polarization doping, the carriers have higher mobility, avoiding the diffusion of dopants in high-temperature environments that could affect device performance.

The invention discloses a solar-blind ultraviolet light sensing, storage and calculation integrated gallium oxide phototransistor and a preparation method thereof. The solar-blind ultraviolet light sensing, storage and calculation integrated gallium oxide phototransistor comprises a substrate, and a gallium oxide unintentional doping layer with intrinsic solar-blind ultraviolet response capability and an N-type gallium oxide conducting layer are arranged on the substrate; two ends of the N-type gallium oxide conducting layer are respectively provided with a source end ion implantation heavily doped region and a drain end ion implantation heavily doped region by implanting doping ions, a source electrode and a drain electrode are respectively arranged above the source end ion implantation heavily doped region and the drain end ion implantation heavily doped region, and a gate dielectric layer is arranged above the N-type gallium oxide conducting layer. The top of the gate dielectric layer is provided with a gate. According to the device provided by the invention, the sensitivity, the response speed and the signal-to-noise ratio are improved, the system advantages of low power consumption, compact structure and function fusion are realized, and a feasible technical path is provided for constructing a new generation of solar blind ultraviolet sensing, storing and computing integrated system with high performance, low energy consumption and high reliability.