Broadband efficient GaN-based LED chip based on surface plasma effect and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SOUTH CHINA UNIV OF TECH
- Publication Date
- 2017-05-31
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Abstract
Description
technical field
[0001] The invention relates to the field of GaN-based LED chips for visible light communication, in particular to a wide-band and high-efficiency GaN-based LED chip based on the surface plasmon effect and a preparation method thereof. Background technique
[0002] Visible light communication uses high-speed blinking LEDs as a signal source. When the flickering frequency of the LED exceeds the response limit of the human eye, the signal source can be used as a light source in lighting, display, backlight and other fields at the same time. With the wide application of LEDs in the above fields, LED chips with high luminous efficiency and high modulation bandwidth, which have both the functions of light source and signal source, have become a research hotspot.
[0003] The modulation bandwidth of the LED chip is mainly affected by the recombination lifetime of minority carriers in the active region and the RC bandwidth, where R and C are the equivalent resistan...