57results about How to "Improved ohmic contact performance" patented technology

The invention relates to an environmental friendly lead-free aluminum slurry and a preparation method thereof. The environmental friendly lead-free aluminum slurry comprises the following components: antioxidant ultrafine aluminum alloy micropowder, barium ferrosilicon borate composite frit and a composite organic carrier. The invention has the advantages that the prepared lead-free aluminum slurry is an environmental friendly electronic slurry without harmful substances including lead, cadmium, mercury and hexavalent chromium, is used as a function material, completely replaces lead containing aluminum slurry, is stable and reliable, and has excellent performance, favorable ohmic contact quality, wide sintering temperature range, low sheet resistance, water boiling resistance, long ageing life and favorable replaceability to noble metals.

The invention discloses a preparing method of a solar cell piece. The preparing method comprises the steps of passivating an emitter and plating an antireflection film, wherein the antireflection film plating operation comprises the steps of, before the step of the emitter passivating, performing plating on the back surface of a silicon wafer for the first time to form a back surface antireflection film; after the emitter passivating step, performing plating on the front surface of the silicon wafer for the second time to form a front surface antireflection film. By the method in which the reflection films are respectively plated on the front surface and the back surface of the silicon wafer before and after the emitter passivating, the passivating layer material in the emitter passivating step is effectively prevented from adhering to the back surface of the silicon wafer, so the contact deformation phenomenon caused by the fact that a metal sizing agent cannot penetrate through the passivating material during sintering is effectively prevented, the ohmic contact performance of the metal sizing agent with the silicon wafer base body is improved, the filling factor of the solar cell piece is enhanced and the photoelectric conversion efficiency of the solar cell piece is improved.

The invention discloses a light emitting diode (LED) and a manufacturing method thereof. The LED comprises a substrate, a buffer layer, an unintentional doping layer, a first doping layer, a first heavy doping layer, a first ohmic contact layer, a first high doping layer, a first isolation layer, a second doping layer, a first current blocking layer, an active region, a second current blocking layer, a third doping layer, a second ohmic contact layer, a transparent conductive layer, a first electrode, a second electrode and a third electrode, wherein the second doping layer comprises a first platform, the first high doping layer comprises a second platform, the first ohmic contact layer comprises a third platform, the first platform, the second platform and the third platform are differentin surface roughness, the first electrode directly contacts with the first platform, the second platform and the third platform, and the first electrode and the second electrode realize electrical isolation through a second protection layer. The LED is advantaged in that the manufacturing process is simple, manufacturing cost of chips is reduced, and a current congestion problem of the LED is effectively solved.

The invention provides a semiconductor device. The semiconductor device forms a silicide on a protection ring for latch prevention, and avoids the protection ring from being damaged by an ESD surge. As a solving means, the semiconductor device has a structure that, a silicide with a width (W3) is not formed on a surface of a second protection ring for latch prevention, and at a side facing a transistor forming region (20).