57results about How to "Improved ohmic contact performance" patented technology

The invention provides a surface treatment method of metal oxide semiconductor and a preparation method of a thin film transistor, wherein the surface treatment method of the metal oxide comprises the following steps that: plasmas are utilized for carrying out surface treatment on a device to be treated; and the plasmas comprise mixed gas of F-base gas and O2, and the device to be treated is a metal oxide semiconductor product or a product plated with the metal oxide semiconductor. In the embodiment provided by the invention, the plasmas obtained by using the mixed gas of F base gas and O2 are used for treating the metal oxide for enhancing the oxygen vacancy concentration in the metal oxide, reducing the contact resistance between the metal oxide and other electrodes and improving the ohm contact effect of the metal oxide.

A method for preparing silver size pole of lead free ohm electrode used on PTC ceramic includes mixing and grinding silver micro powder, zinc powder and organic carrier together to obtain silver size pole material then firing obtained material at temperature of 480-580deg.c to let electrode layer attached on surface of ceramic body tightly for forming excellent ohm contact property.

The invention relates to an environmental friendly lead-free aluminum slurry and a preparation method thereof. The environmental friendly lead-free aluminum slurry comprises the following components: antioxidant ultrafine aluminum alloy micropowder, barium ferrosilicon borate composite frit and a composite organic carrier. The invention has the advantages that the prepared lead-free aluminum slurry is an environmental friendly electronic slurry without harmful substances including lead, cadmium, mercury and hexavalent chromium, is used as a function material, completely replaces lead containing aluminum slurry, is stable and reliable, and has excellent performance, favorable ohmic contact quality, wide sintering temperature range, low sheet resistance, water boiling resistance, long ageing life and favorable replaceability to noble metals.

The invention discloses a conductive paste for a front electrode of a silicon crystal solar battery. The conductive paste is composed of the following materials in percentage by weight: 70%-92% of conductive phase, 1%-10% of glass phase and 5%-25% of organic phase; the conductive phase is composed of 80-99% of silver powder and 1-20% of titanium powder; the organic carrier is composed of the following constituents in parts by weight: 0.2-1 part of thickening agent, 6-9.2 parts of solvent, 0.1-1 part of thixotropic agent, 0.05-0.5 part of surface active agent, 0.3-2 parts of plasticizing agent and 0.05-0.2 parts of coupling agent; the thickening agent is at least one of ethyl cellulose, hydroxyethylcellulose, rosin, acrylic ester and phenolic resin; the thixotropic agent comprises at least one of acrylic resin, hydrogenated castor oil and polyethylene wax; and the surface active agent generally is at least one of lecithin, sorbitan tristearate, zinc stearate, sodium stearate and dodecanol ester. The conductive paste disclosed by the invention can be used for not only maintaining the existing technical performance, but also greatly reducing the cost of the conductive paste, thereby improving the competitive power of the silicon crystal solar battery.

The invention provides a silicon solar energy cell right side conductive silver slurry. The silicon solar energy cell right side conductive silver slurry comprises silver powder, glass powder, an organic carrier, nanometer alloy powder after surface treatment and an additive, wherein the silver powder is micron-level silver powder, the glass powder is modified TeO2-Li2O-Ag2O-PbO glass powder, the nanometer alloy powder after surface treatment is Ag-Pb-Bi-Si alloy powder of which the surface is wrapped in an organic matter, the additive is alkali metal salt treated through silver plating on the surface, if total weight of the silicon solar energy cell right side conductive silver slurry is taken as 100%, weight percents of components of the silicon solar energy cell right side conductive silver slurry are as follows, micron-level silver 60-90%, the modified TeO2-Li2O-Ag2O-PbO glass powder 0.1-10%, the organic matter 1-15%, the nanometer alloy powder after surface treatment 0.1-15% and the additive 0.1-5%.

The invention discloses a material structure for improving the ohmic contact of a p-GaN film and a preparation method thereof, wherein the material structure comprises a substrate (1), a buffer layer (2), an n-GaN film layer (3), a p-GaN film layer (4) and a heavily-doped p-GaN film layer (5), wherein the buffer layer (2) grows on the substrate (1); the n-GaN film layer (3) grows on the buffer layer (2); the p-GaN film layer (4) grows on the n-GaN film layer (3); and the heavily-doped p-GaN film layer (5) grows on the p-GaN film layer (4). According to the invention, the thin heavily-doped p-GaN layer with a large number of defects is inserted between the p-GaN film and a metal, and the heavily-doped p-GaN layer is enabled to have a large number of defect-energy levels by the methods of low-temperature growth or ion injection and the like, so that the transportation of current carriers can be finished through variable-range hopping or defect-energy level assistance, and furthermore, the specific contact resistivity of the p-GaN film and the contacted metal can be decreased, and the ohmic-contact performance of the p-GaN film is improved.

The invention discloses a method for preparing superfine spherical silver powder for barium-titanate-based semiconductor ceramic ohmic electrode slurry, which comprises the following steps of: preparing silver nitrate solution, adding a polymer dispersant with high-speed stirring, and regulating the pH value of the silver nitrate solution to be between 8 and 12; and adding another polymer dispersant, a reducing agent and an antifoaming agent in turn, washing by using deionized water, and drying to obtain a finished product. By skillfully utilizing the change of high and low stirring rotating speeds and adding stirring heat preservation, superfine silver powder particle aggregate with an organic surface is formed, and the settling speed of the silver powder is greatly increased; an organicreagent with a dispersion function, and a polymer surfactant are selected as the antifoaming agent, so that the dispersion function and an antifoaming function are enhanced simultaneously; suitable polymer dispersants, reducing agent, antifoaming agent and alcohol are selected, so that the superfine silver powder with high purity and complete sphericity is prepared, and the barium-titanate-based semiconductor ceramic ohmic electrode slurry prepared from the superfine silver powder has high adhesion and ohmic contact performance and a wide firing temperature range; and the preparation method is nontoxic, low in cost and environment-friendly.

The invention relates to an ultraviolet light-emitting diode chip with a reflection ohmic contact electrode. The ultraviolet light-emitting diode chip comprises a substrate, an AlN template layer, an N-type AlGaN layer, a multiquantum-well active region, an electronic barrier layer, a P-type transition layer, a P-type contact layer and the reflection ohmic contact electrode, wherein the AlN template layer grows on the substrate; the N-type AlGaN layer grows on the AlN template layer; the multiquantum-well active region grows on the N-type AlGaN layer; the electronic barrier layer grows on the multiquantum-well active region; the P-type transition layer grows on the electronic barrier layer; the P-type contact layer grows on the P-type transition layer; and the reflection ohmic contact electrode is made on the P-type contact layer. An ultraviolet light-emitting diode prepared from the chip has the light emitting wavelength range of 200nm to 365nm. The chip has high ultraviolet reflectivity, so that the light extraction efficiency of the ultraviolet light-emitting diode is improved.

The invention discloses a P-type silicon carbide apparatus and a manufacturing method thereof. The P-type silicon carbide apparatus comprises a silicon carbide layer and an aluminum electrode layer; a gold nano-particle layer is arranged between the silicon carbide layer and the aluminum electrode layer. The manufacturing method comprises: firstly, depositing the gold nano-particle layer on the silicon carbide layer by using a sputtering method, and carrying out annealing treatment, wherein, the depositing thickness is 100 nanometers, the temperature of the annealing treatment is 450 to 710 DEG C, the annealing time is 8 to 10 minutes, and the protective gas is nitrogen; and then, manufacturing the aluminum electrode layer on the gold nano-particle layer. The manufactured P-type silicon carbide apparatus has better ohmic contact performance.

The invention discloses a method for preparing a circuit device used for a back contact solar module. The method includes the steps of: manufacturing a perforated insulating adhesive film 3; gluing a copper foil, an aluminum foil or another metal foil with excellent conductivity to the perforated insulating adhesive film 3; machining in a position in a hole of the perforated insulating adhesive film 3 to generate an electrode cluster point, wherein the thickness of the electrode cluster point 4 does not exceed that of the perforated insulating adhesive film 3, and the electrode cluster point 4 is electrically connected with positive and negative poles of a silicon wafer of the solar module through a conductive silver adhesive; machining the metal foil to generate a circuit; and gluing a solar module back plate on the other side of the metal foil. The invention also provides a product produced by the abovementioned method. The method and the product provided by the invention improve ohmic contact performance of a back contact solar cell flexible circuit device, remarkably saves the usage amount of the conductive silver adhesive, and can improve a conductive effect and machining efficiency and reduce machining cost of the circuit device used for the back contact solar module.

The invention relates to a formation method for germanium-doped SiC ohmic contact. The method comprises the steps of forming a Ti/Pt/Au metal electrode on a germanium-doped SiC wafer by electron beam evaporation; performing rapid annealing on the germanium-doped SiC wafer after the electrode is formed to form ohmic contact, wherein rapid annealing is divided into two temperature-rising steps, the temperature of the first stage is risen to 300-500 DEG C and heat preservation is performed for 3-5 mixtures, and the temperature of the second stage is risen to 600-800 DEG C and heat preservation is performed for 5-10 mixtures; and finally, reducing the temperature to a range not higher than 60 DEG C. By doping germanium element, ohmic contact with high quality and low contact resistance is formed; and meanwhile, by changing the concentration of the doped germanium element, germanium-doped SiC products with different ohmic contact properties can be prepared.

The invention provides an LED chip based on a graphical reflector and a manufacturing method of the LED chip. A dielectric film layer grows on the surface of a second type window layer, the dielectricfilm layer comprises a dielectric film and an adhesion layer which are sequentially stacked in the first direction, and the dielectric film layer is provided with a plurality of dielectric holes usedfor forming ohmic contact; the metal reflector is in ohmic contact with the second type window layer through the ohmic contact material in the dielectric hole; good ohmic contact between the metal reflector and the second type window layer is ensured; the adhesion layer is additionally arranged between the dielectric film and the metal reflector, so that the adhesion between the metal material ofthe metal reflector and the dielectric film is improved, the surface of one side, close to the epitaxial laminated layer, of the metal reflector is smoother, the reflection effect of the metal reflector is enhanced, and the high light extraction rate of light is realized. Meanwhile, patterning of the metal reflector can be achieved, so that the reflection path of light is changed, and the light emitting efficiency of the LED chip is improved.

The invention discloses a preparing method of a solar cell piece. The preparing method comprises the steps of passivating an emitter and plating an antireflection film, wherein the antireflection film plating operation comprises the steps of, before the step of the emitter passivating, performing plating on the back surface of a silicon wafer for the first time to form a back surface antireflection film; after the emitter passivating step, performing plating on the front surface of the silicon wafer for the second time to form a front surface antireflection film. By the method in which the reflection films are respectively plated on the front surface and the back surface of the silicon wafer before and after the emitter passivating, the passivating layer material in the emitter passivating step is effectively prevented from adhering to the back surface of the silicon wafer, so the contact deformation phenomenon caused by the fact that a metal sizing agent cannot penetrate through the passivating material during sintering is effectively prevented, the ohmic contact performance of the metal sizing agent with the silicon wafer base body is improved, the filling factor of the solar cell piece is enhanced and the photoelectric conversion efficiency of the solar cell piece is improved.

The invention discloses a double-laminated-layer electrode light-emitting device which is characterized by being provided with a sapphire substrate. A low-temperature buffer layer, an n-type doping layer, a multi-quantum-well layer, a p-type doping layer and a laminated p electrode are sequentially arranged on the sapphire substrate, wherein the n-type doping layer is of a step structure, a laminated n electrode is arranged on the step structure, and the laminated p electrode and the laminated n electrode are of the same structure.

The invention discloses a preparation method of nano low-silver high-efficiency positive silver conductor paste for crystalline silicon solar energy, and the method comprises the following steps: S1)preparing nano silver powder: dropwise adding a saturated silver nitrate and PVP mixed solution into a sodium borohydride solution, performing stirring in a water bath at 30-55 DEG C, performing centrifuging, performing washing with alcohol, and performing drying at a low temperature of 25-30 DEG C and a negative pressure to obtain the nano silver powder; adding a catalyst at 180 +/-5 DEG C for thermal decomposition to obtain silver powder with the particle size of 5-70nm; S2) preparing an organic carrier; S3) preparing nano-silver conductor paste. According to the method, self-made nano silver powder is used for replacing micron-sized silver powder in existing positive silver conductor paste, the microstructure of the silver conductor paste is changed due to reduction of the particle sizeof silver, and therefore the conductivity, the printing performance and the crystalline silicon substrate adhesion performance of the paste are changed, and printed conductor lines have the excellentheight-width ratio; the lines tend to be semitransparent, so that the light transmittance is improved, the photoelectric conversion efficiency is improved, and the application of the positive silverconductor paste in crystalliane silicon solar energy is greatly expanded.

The invention discloses solar aluminum conductor paste. The solar aluminum conductor paste comprises the constituents based on percent by mass: 60-80% of aluminum powder, 0.5-10% of lead-free glass powder, 18-36% of organic carrier and 0.01-5% of additive, wherein the additive is selected from at least one of elements B, Ga and In, an inorganic compound containing Ga and In and a solid solution, and the additive is a coating additive of which a surface is coated with the lead-free glass powder by grinding. In the solar aluminum conductor paste, the additive is more uniformly dispersed in the aluminum paste by improving a morphology and contact mode of the additive in the aluminum paste, the glass powder is more stable to coat around the aluminum paste, a surface crystal boundary morphology of a solid solution crystal after smashing is maintained, ohmic contact performance of an aluminum layer and a silicon wafer is favorably improved, and the conductivity and the photoelectric conversion efficiency of a solar cell are further improved. The invention also discloses a preparation method of the solar aluminum conductor paste.

The invention discloses a preparation method of a silicon carbide N-channel bipolar power device, and belongs to the field of semiconductor devices. According to the method, firstly, a P+ epitaxial layer, an N+ buffer layer and an N- drift layer are sequentially grown on an N-type silicon carbide substrate, secondly, a carrier lifetime prolonging process, a device front MOS preparation process, a device back substrate thinning process and a laser annealing process are introduced on an epitaxial wafer, and finally the preparation of the silicon carbide N-channel bipolar power device is achieved. According to the method, by introducing the carrier lifetime prolonging process, the conductivity modulation effect of the bipolar power device is enhanced, and the specific on-resistance and the conduction loss of the device are effectively reduced. Meanwhile, the method not only avoids the adoption of a high-resistance P-type silicon carbide substrate material, but also has the advantages that the front preparation process of the device is compatible with the preparation process of an MOSFET device, the cost is saved, the risk is smaller, and the industrial preparation is easier.

The invention discloses a crystalline silicon cell and conductive paste thereof. The conductive paste can be matched with a shallow junction process of a P-type doped surface of the crystalline silicon cell. The conductive paste of the crystalline silicon cell comprises the following components in percentage by mass: 30-90% of silver powders, 20-40% of organic carriers, 0.5-30% of powders containing group-III elements and 1-10% of glass powders, wherein the powders containing the group-III elements are one or a mixture of more of boron powders, gallium powders, indium powders and thallium powders; or, the powders containing the group-III elements are a mixture of group-III element powders and copper powders, and the group-III element powders being one or a mixture of more of boron powders,gallium powders, indium powders and thallium powders.

The invention provides a vertical epitaxial structure LED chip and a preparation method thereof, the vertical epitaxial structure LED chip comprises a substrate, an insertion layer, a conductive layer, a low-doped conductive layer and an LED structure layer which are sequentially arranged in a laminated manner, and the insertion layer is a hexagonal boron nitride layer; the conductive layer comprises a plurality of gallium nitride aluminum/gallium nitride heterojunction layers. The mutual acting force between the hexagonal boron nitride layered structures is small, and the damage of stripping to the upper epitaxial structure is small. And by utilizing the layered structure characteristic of the hexagonal boron nitride, the laser lift-off technology cannot damage the structure on the hexagonal boron nitride layer, so that the yield of the LED chip is improved. The gallium nitride aluminum/gallium nitride heterojunction structure can play a role similar to a chip DBR (Distributed Bragg Reflector) due to different materials. Moreover, through the design that the silicon-doped concentration of the gallium aluminum nitride/gallium nitride heterojunction layer is gradually reduced, the gallium aluminum nitride/gallium nitride heterojunction layer can be well matched with an electrode, and has good conductive and ohmic contact effects.