Preparing method of solar cell piece

Abstract

The invention discloses a preparing method of a solar cell piece. The preparing method comprises the steps of passivating an emitter and plating an antireflection film, wherein the antireflection film plating operation comprises the steps of, before the step of the emitter passivating, performing plating on the back surface of a silicon wafer for the first time to form a back surface antireflection film; after the emitter passivating step, performing plating on the front surface of the silicon wafer for the second time to form a front surface antireflection film. By the method in which the reflection films are respectively plated on the front surface and the back surface of the silicon wafer before and after the emitter passivating, the passivating layer material in the emitter passivating step is effectively prevented from adhering to the back surface of the silicon wafer, so the contact deformation phenomenon caused by the fact that a metal sizing agent cannot penetrate through the passivating material during sintering is effectively prevented, the ohmic contact performance of the metal sizing agent with the silicon wafer base body is improved, the filling factor of the solar cell piece is enhanced and the photoelectric conversion efficiency of the solar cell piece is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing solar cells. Background technique [0002] Solar cells have been widely used in various fields, and their good stability and mature process flow are the basis for their large-scale application. When producing crystalline silicon solar cells, it is first necessary to clean the silicon wafers used to make crystalline silicon solar cells. The surface of the silicon wafers is structured through chemical cleaning, and then the cleaned silicon wafers are subjected to a diffusion process. The silicon wafers are treated with boron The diffusion process forms a P-N junction, and then performs a peripheral etching process on the silicon wafer forming the P-N junction, so as to remove the conductive layer formed on the edge of the silicon wafer during the diffusion process. It is then subjected to a chemical cleaning process to remove the glass layer formed on the surface ...

AI Technical Summary

Problems solved by technology

However, although this method of replacing the metal paste can improve the FF of solar cells to a certain extent, the degree of improvement is limited.