Ultraviolet light-emitting diode with high reflection film and manufacturing method of ultraviolet light-emitting diode

A technology of light-emitting diodes and high-reflection films, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low light extraction efficiency, achieve high ultraviolet reflectivity, improve light extraction efficiency, and improve power and efficiency.

Inactive Publication Date: 2013-06-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] In view of this, the present invention discloses an AlGaN-based ultraviolet light-emitting diode device with a high-reflection film structure and a manufacturing method, which relates to the field of microelectronics technology, and mainly solves the problem of low light extraction efficiency in the light-emitting structure on the back of the ultraviolet light-emitting diode

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  • Ultraviolet light-emitting diode with high reflection film and manufacturing method of ultraviolet light-emitting diode
  • Ultraviolet light-emitting diode with high reflection film and manufacturing method of ultraviolet light-emitting diode
  • Ultraviolet light-emitting diode with high reflection film and manufacturing method of ultraviolet light-emitting diode

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Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0022] The invention discloses an AlGaN-based high-reflection ultraviolet light-emitting diode device.

[0023] figure 1 A cross-sectional and top view structural schematic diagram of the AlGaN-based highly reflective ultraviolet light-emitting diode device disclosed in the present invention is shown. Such as figure 1 As shown, the AlGaN-based highly reflective ultraviolet light-emitting diode device includes:

[0024] Substrate 11, the material of the substrate 11 is sapphire, SiC or AlN;

[0025] The AlN nucleation layer 12 is grown on the substrate 11 by metal organic compound vapor deposition (MOCVD), and the AlN nucleation layer is divided into two layers. The first layer is a low-temperature nucleation layer 121...

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Abstract

The invention discloses an AlGaN-based ultraviolet light-emitting diode device with a high reflection film structure and a manufacturing method of the ultraviolet light-emitting diode, relates to the technical field of micro-electronics, and mainly solves the problem of low luminous efficiency of a back light-emitting structure of an ultraviolet light-emitting diode. The device sequentially comprises a substrate, an AlN nucleating layer, an n-type AlGaN potential barrier layer, an active area, a p-type AlGaN potential barrier layer and a p-type GaN cap layer, and a high reflection film is manufactured on the p-type AlGaN potential barrier layer and used for emitting light from the bottom of the device after reflecting the light. The light absorbed by the p-type GaN cap layer in the ultraviolet light-emitting diode is emitted from the bottom of the ultraviolet light-emitting diode, so that the power and the efficiency of the emergent light are greatly improved. The device is simple in process, fine in repeatability and high in reliability, and can be used for the field of air / water purification, medical treatment, biomedicine, white-light illumination, space communication and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an ultraviolet light-emitting diode with a resonant high-reflection film and a manufacturing method thereof. Background technique [0002] As an outstanding representative of the third-generation semiconductor materials, III-V compound semiconductor materials have many excellent characteristics, especially in optical applications. The alloy {Ga(Al,In)N} composed of Ga, Al, In, N Can cover the entire visible light region and near ultraviolet light region. Moreover, the group III nitrides with fibrillite structure have direct band gaps, which are very suitable for the application of optoelectronic devices. Especially in the ultraviolet region, the AlGaN-based multi-quantum well ultraviolet LED has shown great advantages, and has become one of the hot spots in the development of ultraviolet optoelectronic devices. However, as the light-emitting wavelength of LEDs becomes sh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/44H01L33/00
Inventor 曾建平闫建昌王军喜丛培沛孙莉莉董鹏李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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