The invention discloses a manufacturing method of a trench-gate superjunction device. The manufacturing method comprises the steps of 1, forming a trench gate, wherein the step 1 comprises the steps of 11, forming a gate groove in a first epitaxial layer in which a superjunction structure is not formed; 12, forming a gate oxide layer, and rounding a bottom angle and a top angle of the gate grooveby a thermal oxidization process of the gate oxide layer; and 13, forming a poly-silicon gate; and 2, forming the superjunction structure, wherein the step 2 comprises the steps of 21, forming a superjunction post groove; and 22, filling a second epitaxial layer in the superjunction post groove to form a second conductive type of post of the superjunction structure, wherein the first conductive type of post of the superjunction structure comprises the first epitaxial layer between the superjunction grooves. By the manufacturing method, the electric leakage of the device can be reduced, the reliability of the device is improved, and meanwhile, the specific conduction resistance of the device also can be reduced.