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149results about How to "Easily produce" patented technology

Method of producing light- emitting device and light-emitting device

It is an object to produce a thin light-emitting device in an extremely simple method that does not include a substrate on which a light-emitting element is to be mounted.
A method of producing a light-emitting device, including: preparing a plurality of light-emitting elements each including element electrodes in a pair; arranging the plurality of light-emitting elements in a sealing member to expose at least one surface of each of the element electrodes in a pair provided to each of the light-emitting elements; forming external connection electrodes in a plurality of pairs on the sealing member, the external connection electrodes in each pair being electrically connected to the element electrodes in a pair provided to each of the light-emitting elements; and obtaining a plurality of light-emitting devices by dividing the sealing member with the plurality of light-emitting elements, the light-emitting devices each including a light-emitting element having element electrodes in a pair, a sealing member sealing the light-emitting element while at least one surface of each of the element electrodes in a pair is exposed, and external connection electrodes in a pair provided on the sealing member and electrically connected to the element electrodes in a pair.
Owner:CITIZEN WATCH CO LTD +1

Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT

In this silicon single crystal wafer for IGBT, COP defects and dislocation clusters are eliminated from the entire region in the radial direction of the crystal, the interstitial oxygen concentration is 8.5×1017 atoms/cm3 or less, and variation in resistivity within the wafer surface is 5% or less. This method for manufacturing a silicon single crystal wafer for IGBT includes introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×1017 atoms/cm3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The pulled silicon single crystal is irradiated with neutrons so as to dope with phosphorous; or an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so that the phosphorous concentration in the silicon single crystal is 2.9×1013 to 2.9×1015 atoms/cm3 and a p-type dopant having a segregation coefficient smaller than that of the phosphorous is added to the silicon melt so that the concentration in the silicon single crystals is 1×1013 to 1×1015 atoms/cm3 corresponding to the segregation coefficient thereof.
Owner:SUMCO CORP
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