An ultra-
violet light-emitting
diode (LED) array, 12, and method for fabricating same with an AlInGaN multiple-
quantum-well active region, 500, exhibiting stable cw-powers. The LED includes a template, 10, with an
ultraviolet light-emitting array structure on it. The template includes a first buffer layer, 321, then a second buffer layer, 421, on the first preferably with a strain-relieving layer in both buffer
layers. Next there is a
semiconductor layer having a first type of
conductivity, 500, followed by a layer providing a
quantum-well region, 600, with an
emission spectrum ranging from 190 nm to 369 nm. Another
semiconductor layer having a second type of
conductivity is applied next, 800. A first
metal contact, 980, is a charge spreading layer in electrical contact with the first layer and between the array of LED's. A second contact, 990, is applied to the
semiconductor layer having the second type of
conductivity, to complete the LED.