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516results about How to "Compatibility" patented technology

Thin film field effect transistor type gas sensor and preparation method thereof

ActiveCN108447915AEnhanced room temperature gas-sensing effectImprove adsorption capacityTransistorMaterial analysis by electric/magnetic meansBottom gate bottom contactQuantum dot
The invention discloses a thin film field effect transistor type gas sensor and a preparation method thereof. The sensor is a thin film field effect transistor with a bottom gate top contact type structure or a bottom gate bottom contact type structure. A thin film field effect transistor with a bottom grid top contact structure is taken as an example. The transistor comprises a substrate, a gateinsulating layer and a channel active layer from bottom to top. The channel active layer is a quantum dot thin film. A source electrode and a drain electrode are deposited above the substrate. A gateelectrode is further led out of the substrate. The internal composition, the structure, the overall process of the corresponding preparation method and the parameters during all steps of the preparation method of the thin film field effect transistor type gas sensor are improved. The quantum dot thin film serves as a channel active layer and a gas sensitive layer at the same time, and the gas response of multiple parameters is comprehensively regulated by utilizing the grid bias voltage. As a result, the prepared gas sensor is high in sensitivity, low in power consumption and high in selectivity. The effect of detecting low-concentration target gases, such as NO2 and H2S, is achieved.
Owner:HUAZHONG UNIV OF SCI & TECH +1

System and method for dynamically configuring virtual machine migration security policy

ActiveCN103457933AGet Service ContinuitySafety assessment method simplifiedTransmissionSecurity policySecurity management
The invention relates to a system and method for dynamically configuring a virtual machine migration security policy. A source host node and a target host node are both provided with strategy agent modules; a security policy database and a policy coordination module are respectively connected with a security management center; the policy coordination module is further connected with all the strategy agent modules; the security management center is used for inquiring the security policy database to judge whether a local security policy intermediate value violates a global security policy or not; if yes, the local security policy intermediate value is adjusted to be a security policy final value; if not, the local security policy intermediate value is set to be the security policy final value. Due to the fact that the global security policy is introduced in the process of generating the security policy final value, the security policy final value can violate the global security policy under no circumstances; after a virtual machine is migrated, a local security policy on the target host node is adjusted and brought into global security policy planning, and therefore the virtual machine is effectively prevented from lowering in security before and after migration.
Owner:CEC CYBERSPACE GREAT WALL

Chinese medicinal preparation for treating various dermatoses

InactiveCN101979041AOvercome the Difficulties in Treating Skin Diseases by TypeReduce exudationAnthropod material medical ingredientsDermatological disorderCuticleToxic material
The invention discloses a Chinese medicinal preparation for treating various dermatoses, which is prepared from 21 Chinese medicaments such as cortex dictamni, erythrina indica lam and the like capable of promoting blood circulation by removing blood stasis and promoting circulation of qi and to relieve pain. The Chinese medicinal preparation has a unique formulation and precise and appropriate compatibility, has the effects of dispelling wind to nourish blood, removing dampness to relieve itching and cooling blood to remove toxic materials, has no bad adverse effects for clinical application, has a wide treatment range, overcomes the difficulties in grouping treatment of the dermatoses by using Chinese medicines and western medicines, and has significant curative effect of treating various dermatoses such as psoriasis, neurodermatitis, eczema, hives and acne which mainly causes epidermal hyperplasia, skin sichenification, inflammation of cuticula or a derma shallow layer, and vascular reactive and obstructive folliculus pili steatadenitis. After the prescription is taken for 7 days, itching disappears, lesion parts such as papula and maculopapule are gradually fade away, erythema and wheal disappears, exsudation is reduced, and squamae become thinner or fall off; after 14 to 21 days, the papula and the maculopapule disappears, the squamae are reduced, the sichenification disappears to achieve clinical healing; and after 28 to 35 days, skin lesions return to normal and are difficult to have a relapse.
Owner:焉曰义

Field effect transistor gas sensor and array preparation method thereof

The invention discloses a field effect transistor gas sensor and an array preparation method thereof. The field effect transistor (FET) gas sensor is a gate-sensitive FET gas sensor with a gate electrode modified by quantum dots, and a gate-sensitive electrode layer (5) of the FET gas sensor is of a two-layer composite structure or of a single-layer structure made of a composite material. The two-layer composite structure comprises a metal film layer and a quantum dot layer deposited on the surface of the metal film layer. The single-layer structure made of a composite material is specificallya single-layer structure made of a composite material formed by combining quantum dots and a metal or metalloid material. According to the invention, improvement is made on the internal composition and structure of the gate-sensitive FET, the corresponding preparation method and the like, quantum dots are used as a gate electrode and a gas sensitive layer at the same time, and the bias voltage ofthe gate electrode and the channel modulation effect are regulated and controlled by utilizing the adsorption characteristic of a quantum dot gate-sensitive electrode to different gases. A room-temperature gas sensor with high sensitivity, low power consumption and high selectivity can be obtained, and low-concentration target gases (such as H2) can be detected.
Owner:HUAZHONG UNIV OF SCI & TECH
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