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32results about How to "Excellent uniformity" patented technology

Preparation method of Ti2AlNb alloy material

The invention discloses a preparation method of a Ti2AlNb alloy material. The method comprises the steps of 1, preparing a Ti2AlNb alloy ingot through vacuum self-consumption electric arc melting, kish furnace smelting and vacuum self-consumption electric arc melting; 2, conducting primary homogenization treatment on the Ti2AlNb alloy ingot; and 3, wrapping the Ti2AlNb alloy ingot with asbestos cloth, then conducting heat-preservation heat treatment, and then sequentially conducting cogging forging, improved forging and finished product forging, so that the Ti2AlNb alloy material is finally obtained. The preparation method of the Ti2AlNb alloy material is simple in preparation process and reasonable in process design; an alloy is uniform in structure and stable in performance; the alloy ingot can be effectively refined, purified and homogenized through a smelting method; through the high-quality ingot, smooth implementation of subsequent hot working is guaranteed; by means of homogenization treatment, uniformity of alloy elements can be further improved through element diffusion; and wrapping treatment is conducted with the asbestos cloth, the temperature of the material can be effectively prevented from being lowered in the whole forging process, and large-deformation-amount forging for one heating time is achieved.
Owner:NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH

Spinel-coated layered positive electrode material and preparation method and application thereof

The invention discloses a spinel-coated layered positive electrode material with a heterostructure and a preparation method thereof, a positive electrode of a lithium-ion battery of using the positiveelectrode material and the lithium-ion battery of using the positive electrode. According to the spinel-coated layered positive electrode material, a precursor is prepared by using an existing coprecipitation preparation technology, and the precursor is subjected to surface oxidation treatment through an extremely simple mixing method and then subjected to high-temperature heat treatment, therebyobtaining a heterogeneous positive electrode material of employing a lithium-rich layered material as a core and a spinel material as a protective shell. The modification method is easy to operate, high in security, low in cost and suitable for large-scale production; the obtained spinel coating layer is relatively high in integrity and uniformity and adjustable in thickness; the spinel-coated layered positive electrode material is much higher than a commercial positive electrode material in rate capability and cycling stability; and the demand for the lithium-ion battery with high energy density, a long cycle and high stability in the market can be met.
Owner:BEIJING IAMETAL NEW ENERGY TECH CO LTD

Method for chemical gaseous phase deposition of silicon nitride film by electron cyclotron resonance plasma

The invention discloses a low-temperature manufacturing method of silicon nitride film used in passivation layer of an integrated circuit. The silicon nitride film grows on a substrate positioned inside a deposition chamber. The method comprises cleaning the substrate and placing inside the working chamber, vacuumizing the working chamber and presetting working conditions, introducing a mixed gas composed of silicon source gas and nitride source gas into the working chamber, performing ionization and decomposition of the mixed gas with the action of energy absorbed from a microwave source upon electron cyclotron resonance effect, transferring active charged particles produced by the ionization and decomposition to the surface of the substrate with the action of permanent magnetic field, and depositing silicon nitride film on the substrate. The working conditions are as follows: working chamber pressure: 0.1-5Pa, microwave power: 600-2000W, deposition temperature: room temperature to 300 DEG C, total gas flow: 50-300sccm, flow ratio of silicon source gas to nitride source gas: 1:6 to 1:12, and substrate rotation speed: 60 r/min. The inventive method can rapidly and uniformly deposit the low-hydrogen silicon nitride film (6 inch thickness) at low temperature (below 300 DEG C), which is used as a material for passivation layer of integrated circuit or optical devices.
Owner:XIDIAN UNIV

Mother strain culture medium formula of wood-rotting edible fungi and preparation method of mother strain culture medium

The invention discloses a mother strain culture medium formula of wood-rotting edible fungi and a preparation method of a mother strain culture medium. The formula comprises the following raw materials in parts by weight: 60-100 parts of peach twigs, 40-60 parts of wheat grains, 40-60 parts of soybean curd, 15-25 parts of multi-vitamin glucose powder, 15-25 parts of agar and 1000 parts of water. The invention further provides the preparation method of the mother strain culture medium and the preparation method comprises the following steps: selecting the raw materials, preparing, subpackaging, sealing, tying up, sterilizing and placing on a slant. After the mother strain culture medium is used for many years, regardless of purification, rejuvenation or subculture, the growth density of mycelia, uniformity and growth speed of hyphae of the wood-rotting edible fungi which are transferred to and cultured in the mother strain culture medium are better than those of edible fungi cultured in a traditional culture medium PDA (potato dextrose agar); and particularly, under the situation of using a silica gel plug, for a mother strain which is preserved at a low temperature in a refrigerator and then transferred after being preserved for 1-2 years, the survival rate can still be more than 95%, and the occurrence of phenomena of variety degeneration, variation and the like can be avoided.
Owner:TANGYIN EDIBLE FUNGUS RES INST

Flow dividing element and fluid distributor

The invention relates to the technical field of fluid distribution, and discloses a flow dividing element which comprises an element body. A plurality of flow dividing through holes are distributed on the element body; the porosity of the element body is 60 percent to 78 percent; and the included angle between the axis of each flow dividing through hole and the normal of the plane where the flow dividing through hole is located is 0 degree to 15 degrees. By controlling the porosity of the flow dividing through holes and setting the forming directions of the flow dividing through holes, a better flow mixing effect can be achieved on fluid, and the fluid flowing through the flow dividing through holes can be evenly and stably mixed; the fluid distributor comprising the flow dividing element is uniform in liquid distribution, so that good uniformity and stability are achieved, and the uniformity and the stability of the fluid distributor can be even superior to the uniformity and the stability of an existing venturi distributor; and furthermore, a heat exchanger adopting the fluid distributor is uniform in flow distribution, and the energy efficiency is improved. Meanwhile, the flow dividing element provided by the embodiment of the invention is simple in structure, easy to machine and form and low in machining cost. The invention further discloses the fluid distributor.
Owner:QINGDAO HAIER AIR CONDITIONER GENERAL CORP LTD +2
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