3results about How to "Excellent uniformity" patented technology

The application discloses a kind of plasma jet array devices for large size epoxy surface modification, including frame, tank, gas cylinder for loading inert gas, aperture network, high voltage power supply and metal insert;Tank and metal insert are fixed on frame, tank is flat tank and its slot is formed with jet airway for placing and fixing epoxy insulation, the bottom and side of tank are provided with jet spout arranged in array, jet spout is connected by gas inlet pipe, gas inlet pipe is arranged in the inside of side plate and bottom plate of tank;Aperture network is connected on jet spout and connects high voltage power supply, tank is grounded by wire;Metal insert is inserted above epoxy insulation, metal insert is grounded by wire.The application also discloses the use method applied to the above device.Adopting the application, the surface of large size epoxy insulation can be quickly and uniformly modified, and the charge release capacity is improved.

The invention belongs to the technical field of biological medicines, and particularly relates to vitexin-probucol self-assembled nanoparticles as well as a preparation method and application thereof. The nanoparticle is formed by self-assembly of vitexin and probucol, and the mass ratio of vitexin to probucol is 2: (1-5). The nano particles are prepared by adopting a nano precipitation method, and the method specifically comprises the following steps: mixing vitexin and probucol, and dissolving and dispersing in a good solvent to obtain a mixed solution; and adding the obtained mixed solution into a poor solvent, and promoting the vitexin and probucol to be self-assembled to form the nanoparticles by utilizing a solvent replacement effect. The nanoparticles have the advantages of high drug loading capacity, synergistic anti-inflammation and anti-oxidation, long-acting circulation and the like, and can effectively treat atherosclerosis, reduce side effects and improve the treatment effect and safety.

This invention relates to the preparation of wide bandgap semiconductor materials using chemical vapor deposition (CVD) technology. It provides hexagonal boron nitride (h-BN) thin films, their preparation methods, bandgap modulation methods, and a broadband ultraviolet photodetector. Using magnesium nitride as the dopant source, the dopant source is simultaneously introduced into the epitaxial layer of the h-BN thin film via CVD, achieving in-situ doping of magnesium in the h-BN lattice. By controlling the magnesium doping concentration, the bandgap of the h-BN thin film is modulated from 5.91 eV to 3.38 eV. Based on this magnesium-doped h-BN thin film, a broadband ultraviolet photodetector is also prepared, broadening the ultraviolet absorption range to the 185-365 nm band, achieving wide-spectrum, high-sensitivity ultraviolet detection. The doping process of this invention is controllable, and the bandgap modulation effect is significant, breaking through the spectral response limitations of intrinsic h-BN-based detectors and promoting the application of optoelectronic devices in environmental monitoring, biochemical analysis, and other fields.