The invention relates to the technical field of
crystal growth, in particular to a
crystal growth method adopting a high-pressure
inert atmosphere edge-defined film-fed
crystal growth method, which comprises the following steps of: melting a crystal
raw material and a
doping agent under 6-10MPa
inert gas, growing a crystal by a
Czochralski method, and adopting staged
dynamic pressure regulation during growth, the method comprises the following steps: sequentially carrying out neck (6-8 MPa), shouldering (linearly reducing to 4-6 MPa), equal-
diameter (constant 4-6 MPa) and ending (reducing to 3-4 MPa) stages, adopting a double-layer structure, adopting a high-density
solid body as the inner layer, enabling the aperture to be 102-108% of the target
diameter, and arranging a spiral micro-channel on the side wall; the outer layer is a porous material, the
porosity is 15-25%, annealing is carried out after growth, and pressure relief is carried out in stages: when the pressure is greater than 1 MPa, the pressure is released at 0.2-0.3 MPa / min, and when the pressure is less than 1 MPa, the pressure is slowly reduced to normal pressure at 0.05-0.15 MPa / min, so that the wastage rate of volatile components can be controlled below 0.5%.