Target, method for producing the same, memory, and method for producing the same

a technology of target and memory, which is applied in the direction of transportation and packaging, vacuum evaporation coating, coating, etc., can solve the problems of difficult simultaneous dissolution of constituent elements, difficult to form a target by dissolution methods, etc., and achieve the effect of less danger of ignition, less risk of ignition, and reduced number of cathodes in the film formation apparatus for forming an ionization layer of memory devices

Inactive Publication Date: 2011-02-03
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0040]The method for producing a target according to the above embodiment of the invention allows a target containing a refractory metal element and a chalcogen element to be formed with less risk of ignition at the time of pulverization or sintering.
[0041]Accordingly, even a large target having a diameter of 100 mm or more can be produced with less danger of ignition.
[0042]Therefore, a target can be increased in size to correspond to the increased size of a wafer, making it possible to form a film on a large-diameter wafer.
[0043]Further, the memory and the method for producing the same according to the above embodiments

Problems solved by technology

Accordingly, it is difficult to simultaneously dissolve the constituent el

Method used

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  • Target, method for producing the same, memory, and method for producing the same
  • Target, method for producing the same, memory, and method for producing the same
  • Target, method for producing the same, memory, and method for producing the same

Examples

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experimental examples

3. Experimental Examples

[0136]A target was actually produced, and a memory including memory devices was produced using the target.

[0137]With respect to the memory, the characteristics of its memory devices were examined.

example 1

[0138]First, using a 1-mm3 Zr scrap as a Zr raw material of the group of refractory metal elements M1, 1-cm3 Al pellets and a 3-cm2 Cu thin plat as raw materials of the group of elements M2 were dissolved in a high-frequency melting furnace to prepare an AlCuZr alloy ingot.

[0139]Subsequently, the alloy ingot was pulverized in an attritor to prepare an alloy powder with a particle diameter of 106 Ωm or less.

[0140]Subsequently, the alloy powder was mixed with a Te powder with a particle diameter of 75 μm or less and a Ge power with a particle diameter of 32 to 106 μm, and the mixture was sintered to give an AlCuGeTeZr target base material.

[0141]The target base material was then cut into a disc-like piece with a thickness of 5 mm and a diameter of 300 mm to give a target.

[0142]The prepared target was adhered to the backing plate of a sputtering apparatus using In wax.

[0143]Subsequently, a Gd oxide film with a thickness of 2 nm was formed as a high resistance layer 12 on a CMOS circuit ...

example 2

[0154]Using a 1-mm3 Zr scrap as a Zr raw material of the group of refractory metal elements M1, an Al powder as an Al raw material of the group of elements M2 was mixed and dissolved in a high-frequency melting furnace to prepare an AlZr alloy ingot. The prepared alloy ingot was pulverized to give an alloy powder.

[0155]Subsequently, Ge, Cu, and Te raw materials were dissolved in a high-frequency melting furnace to prepare an alloy ingot, which was then pulverized to give an alloy powder.

[0156]These two kinds of alloy powders were then mixed at a desired composition ratio, and sintered to give an AlCuGeTeZr target base material.

[0157]The target base material was then cut into a disc-like piece with a thickness of 5 mm and a diameter of 300 mm to give a target.

[0158]Then, in the same manner as in Example 1, a memory cell array having a large number of memory devices 10 was formed on a wafer to give a sample of the memory of Example 2.

[0159]The characteristics of the memory of the samp...

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Abstract

A target includes: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a target containing a refractory metal element and a chalcogen element and to a method for producing the same. The invention also relates to a memory including a memory device having an ionization layer formed using a target and to a method for producing the same.[0003]2. Description of the Related Art[0004]A high-speed, high-density DRAM has been widely used as a random access memory in an information-processing apparatus, such as a computer.[0005]However, DRAMs are volatile memories that lose their contents when the power is turned off, and the written information (data) has to be frequently refreshed, i.e., the data needs to be frequently read, reamplified, and rewritten.[0006]As non-volatile memories that do not lose their contents when the power is turned off, a flash memory, an FeRAM (ferroelectric random-access memory), an MRAM (magnetic memory device), and the like have been prop...

Claims

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Application Information

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IPC IPC(8): B32B15/04C23C14/34C22C1/10C22C1/04
CPCB22F9/04C22C1/05C23C14/3414H01L45/085H01L45/1233H01L45/1625H01L45/145H01L45/146C23C14/14H01L45/08H01L45/1266Y10T428/31678H10N70/245H10N70/8416H10N70/011H10N70/826H10N70/8833C23C14/3407H10N70/883H10N70/24H10N70/026H10N70/882
Inventor OHBA, KAZUHIROKAMORI, YUICHIKIMURA, HITOSHI
Owner SONY CORP
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