Atomic layer deposition technology and method used for preparing iridium thin film

Abstract

The invention discloses an atomic layer deposition technology and method used for preparing an iridium thin film. The method comprises a liquid iridium source and a hydrazine reduction agent. The liquid iridium source serves as a precursor, the hydrazine reduction agent serves as a reduction precursor, and 1-ethyl cyclopentadienyl-1, 3-cyclohexadienyl (I) and other raw materials can be adopted bythe liquid iridium source. The liquid iridium source Ir is selected as the iridium precursor, the hydrazine reduction agent is selected as the reduction precursor, the heat type atomic layer deposition technology can be directly utilized, and the simple substance iridium thin film can be deposited and is superior to plasma NH3, hydrogen and other gas used in the prior art; and in the use process,operation is more convenient, safer and easier, inconvenience of operation of plasma hydrogen, plasma ammonia gas and the like can be avoided, the preparation process of the simple substance iridium thin film can be simplified, and cost can be saved.

Description

technical field [0001] The invention relates to the technical field related to the preparation method of iridium thin film, in particular to an atomic layer deposition technology and method for preparing iridium thin film. Background technique [0002] The noble metal iridium Ir has strong oxidation resistance, high conductivity, strong catalytic activity and good corrosion resistance. These properties make iridium thin films widely used in electrode materials, microelectronics, optical devices and high temperature oxidation resistance. Coatings, it is worth noting that these metals are very rare in the earth's crust, which combined with their excellent properties and wide range of applications make them expensive. Currently, methods for preparing Ir thin films generally include physical vapor deposition, electrochemical deposition, sol-gel, halide chemical vapor deposition, and metal-organic chemical vapor deposition. The most commonly used ones are physical vapor depositi...

AI Technical Summary

Problems solved by technology

The deposited elemental film has excellent uniformity and good step coverage; it is better than plasma NH3, hydrogen and other gases reported in the literature; it is more convenient, safer and easier to operate during use; it can avoid plasma hydrogen and plasma ammonia It can simplify the p