Surface treatment method of metal oxide and preparation method of thin film transistor

A thin-film transistor and surface treatment technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of high contact resistance between metal oxides and electrodes, and achieve improved ohmic contact effect, increased concentration, and improved contact The effect of the characteristic

Inactive Publication Date: 2012-08-29
BOE TECH GRP CO LTD
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  • Abstract
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Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a metal oxide surface treatment method and a thin film transistor

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  • Surface treatment method of metal oxide and preparation method of thin film transistor
  • Surface treatment method of metal oxide and preparation method of thin film transistor
  • Surface treatment method of metal oxide and preparation method of thin film transistor

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[0049] In order to enable those skilled in the art to better understand the technical solution of the present invention, the metal oxide surface treatment method and the preparation method of thin film transistor provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0050] The device to be processed is processed by plasma. The device to be processed may be a metal oxide or a product plated with a metal oxide. In this embodiment, a metal oxide is used as an example to introduce the technical solution. figure 2 It is a schematic diagram of the structure of the first product in the first embodiment of the metal oxide surface treatment method of the present invention, image 3 Is the XPS spectrum of the metal oxide processed in this embodiment, Figure 4 This is the IV characteristic curve of the metal oxide treated in this embodiment. Such as figure 2 As shown, an insulating layer 202 is deposited on the substrate 201, a...

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Abstract

The invention provides a surface treatment method of metal oxide semiconductor and a preparation method of a thin film transistor, wherein the surface treatment method of the metal oxide comprises the following steps that: plasmas are utilized for carrying out surface treatment on a device to be treated; and the plasmas comprise mixed gas of F-base gas and O2, and the device to be treated is a metal oxide semiconductor product or a product plated with the metal oxide semiconductor. In the embodiment provided by the invention, the plasmas obtained by using the mixed gas of F base gas and O2 are used for treating the metal oxide for enhancing the oxygen vacancy concentration in the metal oxide, reducing the contact resistance between the metal oxide and other electrodes and improving the ohm contact effect of the metal oxide.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a metal oxide surface treatment method and a thin film transistor preparation method. Background technique [0002] Metal oxides can be widely used in transparent electrodes, light-emitting diodes, solar cells, gas sensors and display fields. In various fields of use of metal oxides, metal oxides usually need to have certain electrical characteristics. The main electrical characteristics include Carrier concentration, contact resistance or resistivity, etc. [0003] In the prior art, in order to realize the ohmic contact of metal oxides prepared under different conditions, argon plasma, hydrogen plasma or N 2 O plasma to treat metal oxides to improve the ohmic contact of metal oxides. However, metal oxides cannot exhibit good ohmic contact after the above plasma treatment. figure 1 It is the IV characteristic spectrum line of the metal oxide in the prior art. Such as figure 1 A...

Claims

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Application Information

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IPC IPC(8): H01L21/311H01L21/336
CPCH01L29/7869H01L21/465H01L29/66969
Inventor 刘晓娣成军
Owner BOE TECH GRP CO LTD
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