68results about How to "Increased concentration of oxygen vacancies" patented technology

The invention provides a surface treatment method of metal oxide semiconductor and a preparation method of a thin film transistor, wherein the surface treatment method of the metal oxide comprises the following steps that: plasmas are utilized for carrying out surface treatment on a device to be treated; and the plasmas comprise mixed gas of F-base gas and O2, and the device to be treated is a metal oxide semiconductor product or a product plated with the metal oxide semiconductor. In the embodiment provided by the invention, the plasmas obtained by using the mixed gas of F base gas and O2 are used for treating the metal oxide for enhancing the oxygen vacancy concentration in the metal oxide, reducing the contact resistance between the metal oxide and other electrodes and improving the ohm contact effect of the metal oxide.

The invention discloses a bismuth-phosphate-based composite photocatalytic material. The bismuth-phosphate-based composite photocatalytic material comprises fluorine-nitrogen-codoped bismuth phosphate, bismuth tungstate and bismuth vanadate at a molar ratio of 1 to (0.1-0.3) to (0.1-0.3). The invention further discloses a preparation method of the bismuth-phosphate-based composite photocatalytic material. The preparation method comprises the steps of dissolving bismuth nitrate pentahydrate in a nitric acid solution, adding a mixed solution of phosphate, ammonium tungstate, ammonium metavanadate and sodium hydroxide solution, and carrying out microwave hydrothermal reaction, centrifugation and drying, so as to obtain the bismuth-phosphate-based composite photocatalytic material. According to the bismuth-phosphate-based composite photocatalytic material, by virtue of codoping of nonmetal fluorine and nitrogen ions, the capacity for capturing electrons at an interface among three semiconductors including bismuth phosphate, bismuth tungstate and bismuth vanadate is effectively improved, and the migration efficiency of electron holes is increased; the three semiconductors are compounded at the interface and can form a heterogeneous structure, so that the separation of photon-generated carriers is effectively promoted, and the photocatalytic activity of a composite system is improved.

The invention discloses a composite cathode material for medium and low-temperature proton-conductive solid oxide fuel cells, and belongs to the field of fuel cells. The composite cathode material is characterized in that BaCo<0.7>Fe<0.22>Nb<0.08>O<3-delta> with high oxygen ionic conductivity and high electronic conductivity and BaZr<0.1>Ce<0.7>Y<0.1>Yb<0.1>O<3-delta> with high proton conductivity are composited with each other to manufacture the novel cathode material, a chemical formula of the novel cathode material is BaCo<0.7>Fe<0.22>Nb<0.08>O<3-delta>-BaZr<0.1>Ce<0.7>Y<0.1>Yb<0.1>O<3-delta>, and a ratio of the phase BaCo<0.7>Fe<0.22>Nb<0.08>O<3-delta> to the phase BaZr<0.1>Ce<0.7>Y<0.1>Yb<0.1>O<3-delta> is changeable. The composite cathode material can be used for the medium and low-temperature proton-conductive solid oxide fuel cells. The composite cathode material has the advantages that after the BaCo<0.7>Fe<0.22>Nb<0.08>O<3-delta> and the BaZr<0.1>Ce<0.7>Y<0.1>Yb<0.1>O<3-delta> are composited, the cathode material has oxygen ionic conductivity, proton conductivity and electronic conductivity, a three-phase interface is expanded, the composite cathode material is excellent in electrode performance, the two phases of the composite cathode material are excellent in chemical compatibility and stable in performance, the cathode material is good in electro-catalysis performance owing to the presence of Co in the phase BaCo<0.7>Fe<0.22>Nb<0.08>O<3-delta>, interface resistance of each cell can be reduced, and the working performance of each cell can be improved.

The invention discloses an A-site layered perovskite type electrode material and a preparation method thereof, belonging to the technical field of solid oxide fuel cells. By utilizing the high oxygenion conductivity property of the A-site layered perovskite oxide, and the multivalent state and the anti-reduction property of the B-site Mn ion, the invention synthesizes and prepares a symmetric electrode material with stable structure and excellent electrochemical performance. Through the doping of B-site transition metal ions (Fe, Co, Ni), the catalytic activity of the material is further controlled. The molecular formula of the electrode material is: LnBaMn2xMxO5+delta, wherein Ln is equal to Sm, Gd, Nd, M is equal to Mn, Fe, Co, Ni, x is not less than 0 and not greater than 2, and deltais not less than 0 and not greater than 1. The electrode material is classified into a dense electrode material and a porous film type electrode material. The presence of A-site ions provides sufficient oxygen vacancy concentration for the material, which contributes to the improvement of the ionic conductivity of the material. The selected transition metal elements, with low-cost feature and lower metal-oxygen strengthening feature, may further improve oxygen vacancy concentration in the grid. At the same time, the d-electron features of the elements may also enhance the catalytic activity ofthe material.

The invention provides a silicon oxycarbide film and an RRAM (resistive random access memory). The molecular formula of a silicon oxycarbide film resistive material is SiCxOy, wherein x is from 1.21 to 0.21, y is from 1.45 to 2.01, and x and y are in negative correlation. The thickness of the film is 50nm or less. The RRAM comprises a top electrode, a resistive dielectric layer, a substrate and a back electrode, and is characterized in that the resistive dielectric layer is the silicon oxycarbide film. The top electrode is made of Ag and Al. The RRAM is prepared by a material compatible with the COMS technology, and physical deposition film equipment is mainly used in a preparation process. No high-temperature technology is employed, and the consumption of energy is reduced. Silicon oxycarbide films with different defect concentrations can be obtained through the control of gas proportion. For an SiC0.202.01 material, the switch ratio reaches 500, and can completely meet the actual demands (the switch ratio is greater than 10). Meanwhile, the RRAM based on the silicon oxycarbide material has a self-rectification effect, thereby simplifying the design of an external circuit.

The invention discloses an in- situ control method for the form and the crystal face of nano cerium oxide, and belongs to the technical field of rare earth nano materials. Organic alcohol used as a dispersing agent is combined with a cavitation effect to disperse and shear a nano template. A alkaline matter is used as a cerium source precipitator, the size of the nano template and an aggregation state of the same in a reaction system are controlled by adjusting viscosity and surface tension of the dispersing agent, so that a cerium precursor is adsorbed on the surface of the nano template and grows in a preferred orientation, and thus a growth speed of each crystal face of the cerium oxide is finally controlled, and control on the form and the crystal face of the nano cerium oxide in a nanoscale range is achieved. The method provided by the invention is simple in preparation technology, moderate in reaction condition and easy to acquire reaction material; no surfactant is added, and the added nano template has no residual and consumes a part of oxygen by calcining and oxidation, so that the purified cerium oxide is acquired and meanwhile oxygen vacancy concentration can be increased, and thus the method is wide in application prospect.

The invention discloses A-site high-entropy perovskite oxide MeTiO3 thermoelectric ceramic and a preparation method thereof. The A-site high-entropy perovskite oxide MeTiO3 has a single-phase perovskite structure, the elements in the A-site high-entropy perovskite oxide MeTiO3 are uniformly distributed without agglomeration, and the A-site high-entropy perovskite oxide MeTiO3 has thermoelectric performance and can be used in the field of thermoelectric materials. The chemical composition of the A-bit high-entropy perovskite oxide MeTiO3 is (Ca < 0.2 > Sr < 0.2 > Ba < 0.2 > La < 0.2 > Pb < 0.2 >) TiO3, (Ca < 0.25 > Sr < 0.25 > Ba < 0.25 > La < 0.25 >) TiO3, (Ca < 0.25 > Sr < 0.25 > Ba < 0.25 > Pb < 0.25 >) TiO3, (Ca < 0.25 > Sr < 0.25 > Ba < 0.25 > Nd < 0.25 >) TiO3, (Ca < 0.25 > Sr < 0.25 > Ba < 0.25 > Sm < 0.25 >) TiO3, and (Ca < 0.25 > Sr < 0.25 > Ba < 0.25 > Eu < 0.25 >) TiO3. According to the invention, the high entropy of the perovskite structure is realized, the disorder degree of atom arrangement in the material composition is improved, the phonon scattering is increased, and the thermal conductivity is reduced, so that the thermoelectric performance is improved. In the sintering process, oxygen atoms are migrated and discharged through oxygen vacancies in material crystal lattices, the porosity is reduced, the ceramic density is improved, meanwhile, the oxygen vacancy concentration is improved, and the carrier concentration of the material is improved. By adopting a reduction annealing process of argon and carbon powder, the semiconduction of perovskite oxide is realized, the carrier concentration of the ceramic is improved, the conductivity is improved, and the thermoelectric performance is further improved.

The invention discloses a preparation process of a metal oxide thin film transistor (Metal oxide thin film transistor, MOTFT). First, the active layer with optimal O content is employed to improve the EBS stability of the MOTFT. Second, the Mg-doped active layer is used to improve the UV light stability of the MOTFT. Finally, use rich In2O3 or pure ZnO active layer to improve the mobility of MOTFT.

The invention relates to a preparation method and application of a photocatalyst, copper calcium titanate containing high-density oxygen vacancy. The preparation method includes: utilizing a one-step molten salt method; controlling morphology and oxygen vacancy content by changing molten salt composition during synthesis; using metal oxide as a raw material; grinding and calcining the raw material to form a high-purity photocatalyst; calcining before washing the high-purity photocatalyst. The preparation method has the advantages of few raw material type, simple operation, adjustable molten salt composition, mild condition and simple process. A copper calcium titanate photocatalysis material obtained by the preparation method is high in yield, uniform in distribution and free of introduction of other mixed elements; by introducing oxygen vacancy, compositing of photo-induced electron hole pairs can be inhibited effectively, and the material is endowed with excellent visible light photocatalysis performance and is better than a commercial star photocatalysis material, titanium dioxide (P25). The defect that visible light cannot be used due to wide oxide band gap is overcome, and the defect that sulfide is unstable is made up due to the characteristic that the catalyst is of a diamond-like structure.

The invention discloses a cerium-based core-shell structure catalyst and a preparation method thereof, wherein the core-shell structure is synthesized by using pulsed laser. According to the present invention, through the interaction between cerium oxide and silver, the catalytic performance of the catalyst is enhanced, and the activity and the stability of the catalysis of the cerium-based catalyst on soot particulates are improved so as to reduce the emission of pollutants and reduce air pollution.

The invention discloses layered manganese oxide with water resistance and sulfur poisoning resistance and a preparation method and application thereof, and belongs to the technical field of catalyticmaterials. The preparation method comprises the following steps: adding a KMnO4 solution into chain alcohol, or adding chain alcohol into a KMnO4 solution, and then reacting at the condition of 10-38DEG C for 6-48 h; and filtering after the reaction, washing a precipitate and drying to obtain layered manganese oxide. The carbon atom number of the chain alcohol is less than or equal to 4; and theraw materials are continuously stirred or vibrated during the addition process and the reaction process. The chain alcohol is preferably methanol or ethanol. When applied to catalytic combustion of volatile organic compounds, the prepared layered manganese oxide has advantages of high specific surface area, high catalytic activity, strong catalytic stability, excellent water resistance, sulfur poisoning resistance and the like.

The invention discloses a monolithic catalyst for catalytic oxidation of wet VOCs-containing tail gas. The catalyst comprises a cordierite honeycomb carrier, a composite zirconia coating doped with rare earth components and supported on the carrier, active components loaded on the coating, and hydrophobic components covering the surface of the catalyst. The invention further discloses a preparation method of the catalyst and application of the catalyst in catalytic oxidation of the wet VOCs-containing tail gas. The composite zirconia coating doped with the rare earth components, an active component coating and a hydrophobic component coating are sequentially prepared on the carrier through a step-by-step impregnation method. The rare earth components in the catalyst improve the oxygen supply capacity of the composite zirconia coating and the activity of the catalyst, and the hydrophobic components on the surface of the catalyst avoid the activity decrease of the catalyst and improve the water vapor resistance of the catalyst. The preparation method of the catalyst is simple and easy to achieve, and the catalyst has high catalytic efficiency and a wide use range and is suitable forcatalytic oxidation of the wet VOCs-containing tail gas at low temperature.

The invention discloses a method for preparing a transparent conductive film and belongs to the technical field of photoelectric materials. The method comprises the following steps of providing a base, carrying out thorough ultrasonic cleaning on the base, spin-drying the cleaned base, drying the base by an oven, putting the dried base into a magnetron sputtering chamber, carrying out vacuum-pumping on the magnetron sputtering chamber, feeding high-purity Ar, O2 and assistant reaction gas which is one of H2 and a H-rich compound into the magnetron sputtering chamber, keeping the pressure intensity in the magnetron sputtering chamber in a range of 0.3-1Pa, carrying out sputtering on the target material so that a transparent conductive film is formed on the base, and carrying out annealing treatment on the transparent conductive film at an annealing temperature of 150-200 DEG C. Through use of H-rich gas such as H2 in the sputtering deposition, the transparent conductive film having low resistivity and high transmittance can be obtained under low-temperature annealing conditions in short time so that an annealing temperature and a production cost are greatly reduced.

The invention belongs to the technical field of materials, and provides a preparation method and application of a modified material based on titanium dioxide, which comprises the following steps: dissolving a certain amount of boric acid and rhodium chloride trihydrate in water containing nitric acid and alcohol to obtain a solution A; dropwise adding isopropyl titanate into the ethanol solution at the temperature of 0-4 DEG C to obtain a solution B; slowly dropwise adding the solution A into the solution B to obtain titanium dioxide sol; aging the titanium dioxide sol at room temperature, andperforming drying to obtain xerogel; and finally, grinding the dry gel into powder, and calcining the powder in air for 4 hours to obtain the boron-rhodium co-doped titanium dioxide, namely the titanium dioxide-based modified material. The material is used for photocatalytic hydrogen production, and the catalytic hydrogen production efficiency is effectively improved. The boron-rhodium co-doped titanium dioxide is prepared by adopting a one-pot sol-gel method, the absorption bandwidth of the titanium dioxide can be regulated and controlled by adjusting the rhodium doping proportion, and the light absorption and carrier separation efficiency is improved.

A disclosed co-doped bismuth phosphate-base composite photocatalytic material is composed of fluorine-nitrogen co-doped bismuth phosphate, bismuth tungstate and bismuth vanadium oxide, and the molar ratio of fluorine-nitrogen co-doped bismuth phosphate, bismuth tungstate and bismuth vanadium oxide is 1:0.1-0.3:0.1-0.3. The invention also discloses a preparation method of the material. The preparation method comprises: performing microwave hydrothermal reaction on bismuth nitrate pentahydrate, a phosphate, ammonium tungstate and ammonium metavanadate to obtain a mixed powder, then adding ammonium chloride and performing microwave hydrothermal reaction again, and centrifuging and drying to obtain the material. The co-doped bismuth phosphate-base composite photocatalytic material effectively improves the electron capture capability of the three semiconductors bismuth phosphate, bismuth tungstate and bismuth vanadium oxide at the interfaces through co-doping of nonmetal fluorine and nitrogen ions, and enhances the electron cavity migration efficiency. The three semiconductors bismuth phosphate, bismuth tungstate and bismuth vanadium oxide can form a heterostructure at the interfaces, separation of photocarriers is effectively facilitated, and further the photocatalytic activity of the composite system is improved.

The invention discloses a back-passivated crystalline silicon solar cell and a preparation method thereof. Molybdenum oxide is used as a p-type crystalline silicon passivation layer and a hole transport layer, and the solar cell has the following structure: Ag / SiNx / n-C-Si / p-C-Si / SiO2 / MoO3 / Al / Ag, where x=0. 9-1.2, and n-C-Si is phosphorus doped n-type crystalline silicon. The invention uses molybdenum oxide instead of alumina as the back passivation material of the p-type crystalline silicon cell, and thus the recombination of the back side of the cell can be greatly reduced and the molybdenumoxide can also be used as the hole transport layer of the p-type crystalline silicon cell. Therefore, in the actual production process of the cell, the laser drilling is not required to ensure the transmission of carriers like PERC cells, which can not only reduce the backside recombination of crystalline silicon, but also avoid the negative impact of laser drilling.

The invention discloses a Sm-Gd-Dy tri-rare-earth ion tantalate and a preparation method and application thereof. The general chemical formula of the Sm-Gd-Dy tri-rare-earth ion tantalate is SmGdDy<c>TaO<7>, wherein the a, b and c meet the relationship of a+b+c=3 and are separately in a range of 0.8-1.2. The preparation method comprises the following steps: (1) weighing samarium nitrate, gadolinium nitrate, dysprosium nitrate and tantalum oxalate according to a stoichiometric ratio, performing mechanical mixing with citric acid with a preset amount under a heat preservation condition, adding a concentrated ammonia water neutralization solution during the mixing process, and carrying out mechanical mixing to promote a complexation reaction under a heat preservation condition; and (2)drying the obtained solution, and then carrying out calcination at a high temperature to remove carbon impurities to obtain the Sm-Gd-Dy tri-rare-earth ion tantalate powder. The Sm-Gd-Dy tri-rare-earth ion tantalate has good high-temperature thermal stability and low thermal conductivity, and can be used as a thermal barrier coating material.

Belonging to the field of solid electrolyte preparation, the invention in particular relates to an oxygen ion conduction medium temperature solid oxide fuel cell electrolyte. The invention adopts a nitrate gel combustion method to prepare the medium temperature solid oxide fuel cell electrolyte, which is a Ce0.87La0.11Ni0.02O2-alpha-Bi1.55La0.45O3 composite electrolyte, wherein alpha is greater than 0 and smaller than or equal to 0.075. The relative density reaches 98% or more. The ionic conductivity of the electrolyte reaches 1.88*10<-2>S / cm at 700DEG C in an air atmosphere.

The invention relates to a preparation method of an electrolyte material for a medium-temperature solid fuel cell, and belongs to the technical field of new energy sources. Based on the characteristics of higher oxygen ion conductivity of the cerium-oxide-doped electrolyte at a relatively low temperature as well as better chemical compatibility and mechanical matching property with a high-performance cathode material at sintering and working temperatures, the electrolyte material of the cell is formed by doping rare earth elements such as cerium, gadolinium and the like, the oxygen vacancy concentration of the cell is greatly increased, and accordingly, the ion conductivity of the cell is improved; the crystal size of the material is reduced at a lower synthesis temperature, and the sintering performance and the sintering density of the material are improved, so that the oxygen ion conduction of the electrolyte is ensured; the average crystal size of the electrolyte is reduced by compounding titanium dioxide and strontium oxide, particles of the electrolyte are homogenized, the whole electrolyte can be more densified, the ionic conductivity is improved, and the output power of thesingle cell supported by the electrolyte is further improved.

The invention discloses an A-site and B-site co-doping strontium titanate mixed conductor material with A-site deficiency. The material is a product in which A-site of perovskite type SrTiO3 is doped with 30 mol% of La and B-site of perovskite type SrTiO3 is doped with 4 mol% of Sm, and a molecular formula after co-doping is (La0.3Sr0.7)1-xTi0.96Sm0.04O3-delta, in which x is equal to 0.05 to 0.09. A preparation method comprises the following steps: using a compound containing lanthanum, samarium, strontium and titanium to configure raw materials according to a stoichiometric proportion of the (La0.3Sr0.7)1-xTi0.96Sm0.04O3-delta; compounding the configured raw materials into A-site and B-site co-doping SrTiO3 powder in an air atmosphere at the temperature of 900 to 1200 DEG C with a sol-gel method; grinding the powder into fine powder with 100 to 200 meshes; adding 10% to 50% of an inflammable substance into the fine powder for press molding, and calcining for 2 to 12 hours at the temperature of 1300 to 1600 DEG C so as to obtain a mixed conductor block body. According to the material, on the basis of La doping, un-equivalent metal ions are doped on the B-site of the material, so that the ion deficiency concentration is improved, and the ionic conductivity and comprehensive conductivity of La-doped SrTiO3 are improved.

The invention provides an oxide material of an iron-based double perovskite structure and a preparation method thereof. The material is a layered oxygen vacancy isomeric material with an ordered A position, and the molecular formula is GdBaFe2O5 + delta, wherein the A position is Gd and Ba ordered coexistence. The material synthesized in an oxidizing atmosphere and a reducing atmosphere has different oxygen vacancies, GdBaFe2O5+delta of two different configurations can be obtained by changing synthesis conditions, and a cathode and anode of a solid oxide fuel cell are prepared respectively; and the electrode made of the material can be used as a symmetrical battery electrode. A catalyst prepared from the material can be used for high-temperature cracking of hydrocarbon fuel, and is particularly applied to selective separation of methane and carbon dioxide. The wet chemical preparation method of the material provided by the invention is simple, efficient and wide in material applicability.

A disclosed fluorine-nitrogen co-doped bismuth phosphate-cuprous oxide photocatalytic material is composed of fluorine-nitrogen co-doped bismuth phosphate and cuprous oxide, wherein the molar ratio of fluorine-nitrogen co-doped bismuth phosphate to cuprous oxide is 1:0.2-1. A disclosed preparation method for the composite photocatalyst comprises: dispersing a fluorine-nitrogen co-doped bismuth phosphate powder in copper(II) chloride dihydrate, then dropwise adding polyvinylpyrrolidone and a sodium hydroxide solution, then adding an L-ascorbic acid solution, transferring to a hydrothermal reaction kettle to perform microwave hydrothermal processing, and naturally cooling to room temperature, and performing centrifugal separation, washing and drying on the obtained product, so as to obtain the composite photocatalyst. Through co-doping of nonmetal fluorine and nitrogen ions, the electron capturing capability on the interface of a bismuth phosphate semiconductor is effectively improved, the electron cavity migration efficiency is enhanced, and the oxygen vacancy concentration in the bismuth phosphate semiconductor is increased, and thus the photocatalytic activity of bismuth phosphate is improved.

The invention relates to a preparation method of a direct ethanol fuel cell anode catalyst, and belongs to the technical field of fuel cells. The preparation method is characterized in that glucose isused as a raw material for preparing carbon spheres used as a carrier, and manganese dioxide is loaded to replace part of platinum, and on that basis, the efficient and low-cost catalyst is prepared;and meanwhile, rare earth elements are doped, so that electrons are easily excited and transferred from a conduction band, thus oxygen vacancy is promoted to develop, and the oxygen vacancy concentration of the catalyst is greatly increased, and as a result, the ion conductivity is improved; in addition, the crystal size of the material is reduced due to low synthesizing temperature; the C-C breaking efficiency under low temperature is improved. According to the method, TiO2 and Pt are coordinated to improve the catalyzing performance of the catalyst; and meanwhile, a CO type intermediate product produced by ethanol oxidizing is easily transferred to the TiO2 nanoparticle surface to be oxidized; the catalyzing activity and stability of the catalyst are improved while the Pt content is decreased; and moreover, the initial potential of the ethanol starting to oxidize is reduced; high current density is obtained, and as a result, the fuel cell performance is improved.

The present invention provides a nitrogen oxide degradation membrane and a preparation method thereof. The raw material components of the degradation membrane mainly consist of cerium acetylacetonate, barium acetylacetonate, potassium fluoride, melamine and graphene, wherein cerium acetylacetonate and barium acetylacetonate are , potassium fluoride and melamine through a sol-gel method to prepare F and N co-doped BaCeO3, a precursor powder is obtained by mixing graphene with F and N co-doped BaCeO3, and the nitrogen is obtained by a casting film forming method Oxide degradation film. Thus, a non-metal modified inorganic degradation membrane is prepared through the sol-gel method, which has a more efficient and stable current utilization rate and is suitable for highly selective electrocatalytic degradation of nitrogen oxides.

The invention discloses Eu-Gd-Dy trirare earth ion tantalate and a preparation method and an application thereof, the Eu-Gd-Dy trirare earth ion tantalate has the chemical general formula of EuaGdbDycTaO7, wherein a+b+c=3, and a, b and c is 0.8-1.2. The preparation method comprises the following steps: 1) according to the stoichiometric ratio, weighing europium chloride, gadolinium nitrate, dysprosium nitrate and tantalum oxalate, mechanically mixing with citric acid with a set amount under a heat-retaining condition, adding strong aqua ammonia in the mixing process to neutralize the solution,and then mechanically mixing to promote the process of the reaction under a heat-retaining condition; and 2) drying the obtained solution, then calcining at high temperature to remove carbon impurities, and thus obtaining an Eu-Gd-Dy trirare earth ion tantalate powder. The Eu-Gd-Dy trirare earth ion tantalate has the advantages of good high temperature thermal stability and low thermal conductivity coefficient, and can be used as a thermal barrier coating material.

The invention belongs to the technical field of microelectronic and semiconductor processing, and relates to a silicon-doped magnetron sputtering process for improving the reliability of a TaOx-based resistive random access memory. The process comprises the following steps: (1) cleaning a SiO2 / Si substrate, (2) plating a lower electrode TiN film on the SiO2 / Si substrate by adopting a magnetron sputtering method, (3) depositing a TaOx film on the lower electrode TiN film by adopting magnetron sputtering and doping Si, (4) annealing the Si-doped TaOx film subjected to sputtering deposition in the step (3), and (5) plating an upper electrode by magnetron sputtering. According to the method, Si is doped in the TaOx thin film, the defect structure in the TaOx thin film can be effectively adjusted, the oxygen vacancy concentration is increased, the operating voltage of the device is reduced, the memory window is enlarged, the reliability of the device is improved, the technological process is simple, the thin film deposition speed is high, and technical support can be provided for large-scale application and popularization of the resistive random access memory.

The invention relates to the technical field of bifunctional calcium-based materials, and particularly provides a high-activity CaO-based bifunctional material as well as a preparation method and application thereof. The CaO-based bifunctional material is prepared from the following components: CaO, CeO2, Ca12Al14O33 and Ca2Fe2O5. The preparation method comprises the steps of (1) adding limestone into distilled water, and stirring; (2) adding a solution containing carboxyl into the stirred turbid liquid, filtering after the mixture is stable, and then drying to obtain a solid material; (3) adding distilled water into the solid material at room temperature, stirring until the solid material is completely dissolved, and adding aluminum salt and cerium salt into the solution and stirring; (4) drying the solution in a ventilated drying box, and obtaining a solid material after complete drying; (5) burning the solid material in an air atmosphere to obtain a solid material; and (6) weighing red mud at room temperature, and uniformly mixing to obtain the high-activity CaO-based bifunctional material. The problems that when a high-activity CaO-based material is used, the CO2 trapping performance is low, and the cycle stability and the enhanced biomass gasification hydrogen production performance are low in the prior art are solved.

The invention discloses a Sm-Eu-Dy tri-rare-earth ion tantalate and a preparation method and application thereof. The general chemical formula of the Sm-Eu-Dy tri-rare-earth ion tantalate is SmEuDy<c>TaO<7>, wherein the a, b and c meet the relationship of a+b+c=3 and are separately in a range of 0.8-1.2. The preparation method comprises the following steps: (1) weighing europium chloride, samarium nitrate, dysprosium nitrate and tantalum oxalate according to a stoichiometric ratio, performing mechanical mixing with citric acid with a preset amount under a heat preservation condition, adding a concentrated ammonia water neutralization solution during the mixing process, and carrying out mechanical mixing to promote a chemical reaction under a heat preservation condition; and (2) drying the obtained solution, and then carrying out calcination at a high temperature to remove carbon impurities to obtain the Sm-Eu-Dy tri-rare-earth ion tantalate powder. The Sm-Eu-Dy tri-rare-earth iontantalate has good high-temperature thermal stability and low thermal conductivity, and can be used as a thermal barrier coating material.

A disclosed co-doped bismuth phosphate-base composite photocatalytic material is composed of fluorine-nitrogen co-doped bismuth phosphate, bismuth tungstate and bismuth vanadium oxide, and the molar ratio of fluorine-nitrogen co-doped bismuth phosphate, bismuth tungstate and bismuth vanadium oxide is 1:0.1-0.3:0.1-0.3. The invention also discloses a preparation method of the material. The preparation method comprises: performing microwave hydrothermal reaction on bismuth nitrate pentahydrate, a phosphate, ammonium tungstate and ammonium metavanadate to obtain a mixed powder, then adding ammonium chloride and performing microwave hydrothermal reaction again, and centrifuging and drying to obtain the material. The co-doped bismuth phosphate-base composite photocatalytic material effectively improves the electron capture capability of the three semiconductors bismuth phosphate, bismuth tungstate and bismuth vanadium oxide at the interfaces through co-doping of nonmetal fluorine and nitrogen ions, and enhances the electron cavity migration efficiency. The three semiconductors bismuth phosphate, bismuth tungstate and bismuth vanadium oxide can form a heterostructure at the interfaces, separation of photocarriers is effectively facilitated, and further the photocatalytic activity of the composite system is improved.

The invention provides a lithium niobate or lithium tantalate wafer blackening method based on ion implantation, and the method comprises the following steps: obtaining a wafer which is a lithium niobate wafer or a lithium tantalate wafer; carrying out reductive ion implantation processing on the wafer to obtain a wafer into which reductive ions are implanted; and carrying out annealing treatmenton the wafer implanted with the reducing ions. According to the method, wafer blackening is carried out on the basis of ion implantation, and the high-quality blackened wafer can be obtained under thecondition that the piezoelectric property of the material is not affected. According to the method, an ion implantation technology is utilized, reducing ions such as Fe<2+> are injected into the lithium niobate or lithium tantalate wafer. The injection of Fe<2+> and the like occupies the lattice points of ions with higher valence state in the crystal lattice, the oxygen vacancy concentration in the lithium niobate or lithium tantalate crystal is increased, the carrier concentration in the wafer is improved, the conductivity of the wafer is further improved, the resistivity is reduced, then the wafer is annealed and repaired, and the pyroelectric effect of the crystal can be effectively reduced.