Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lithium niobate or lithium tantalate wafer blackening method based on ion implantation

A technology of ion implantation and ion implantation machine, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc. Difficulty, easy to explode and other problems, to achieve the effect of increasing the carrier concentration, reducing the pyroelectric effect, and increasing the concentration of oxygen vacancies

Active Publication Date: 2020-10-20
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are some problems in the above methods. Reducing gases such as carbon monoxide and hydrogen are prone to explosion during heating treatment, which has great potential safety hazards. Wafer contact blackening treatment may cause different degrees of wafer blackening and uneven color. The use of carbonates and hydrides for reduction has insufficient reducibility and requires a relatively long processing time. Some potential disadvantages of other methods include the impact of particles adsorbed on the wafer surface on wafer quality and the difficulty in requiring corresponding equipment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithium niobate or lithium tantalate wafer blackening method based on ion implantation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0026] Reference herein to "one embodiment" or "an embodiment" refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it should be understood that the orientations or positional relationships indicated by the terms "upper", "lower", "top", and "bottom" are based on the orientations or positional relationships shown in the drawing...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a lithium niobate or lithium tantalate wafer blackening method based on ion implantation, and the method comprises the following steps: obtaining a wafer which is a lithium niobate wafer or a lithium tantalate wafer; carrying out reductive ion implantation processing on the wafer to obtain a wafer into which reductive ions are implanted; and carrying out annealing treatmenton the wafer implanted with the reducing ions. According to the method, wafer blackening is carried out on the basis of ion implantation, and the high-quality blackened wafer can be obtained under thecondition that the piezoelectric property of the material is not affected. According to the method, an ion implantation technology is utilized, reducing ions such as Fe<2+> are injected into the lithium niobate or lithium tantalate wafer. The injection of Fe<2+> and the like occupies the lattice points of ions with higher valence state in the crystal lattice, the oxygen vacancy concentration in the lithium niobate or lithium tantalate crystal is increased, the carrier concentration in the wafer is improved, the conductivity of the wafer is further improved, the resistivity is reduced, then the wafer is annealed and repaired, and the pyroelectric effect of the crystal can be effectively reduced.

Description

technical field [0001] The present application relates to the technical field of post-processing of crystal materials, in particular to a method for blackening lithium niobate or lithium tantalate wafers based on ion implantation. Background technique [0002] Lithium niobate (LiNbO 3 , LN) and lithium tantalate (LiTaO 3 , LT) crystal is a very typical multifunctional crystal, because of its excellent ferroelectric, piezoelectric, pyroelectric, acousto-optic, electro-optic, photorefractive and nonlinear properties, it is currently widely used in surface acoustic wave devices (SAW), optical communication and optoelectronics and other fields. Surface acoustic wave filter is one of the very important application directions of LN and LT crystals. Due to the crystal cutting and polishing, the color is close to transparent and has high optical transmission, as well as its inherent pyroelectric effect, the preparation of SAW devices still exists Many inconveniences. [0003] Fi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/253H01L41/22H10N30/04H10N30/01
CPCH10N30/04H10N30/01
Inventor 欧欣孙嘉良游天桂林家杰
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products