Crystalline silicon cell and conductive paste thereof

Abstract

The invention discloses a crystalline silicon cell and conductive paste thereof. The conductive paste can be matched with a shallow junction process of a P-type doped surface of the crystalline silicon cell. The conductive paste of the crystalline silicon cell comprises the following components in percentage by mass: 30-90% of silver powders, 20-40% of organic carriers, 0.5-30% of powders containing group-III elements and 1-10% of glass powders, wherein the powders containing the group-III elements are one or a mixture of more of boron powders, gallium powders, indium powders and thallium powders; or, the powders containing the group-III elements are a mixture of group-III element powders and copper powders, and the group-III element powders being one or a mixture of more of boron powders,gallium powders, indium powders and thallium powders.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a crystalline silicon cell and a conductive paste for the crystalline silicon cell. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, the research and development of cost-effective silicon solar cells has become the main research direction of photovoltaic companies in various countries. [0003] Existing crystalline silicon solar cells are mainly single-sided solar cells...

AI Technical Summary

Problems solved by technology

At present, the pastes applicable to the P-type doped surface are mainly aluminum paste and silver-aluminum paste. Aluminum has a strong penetration ability in silicon materials. In order to match with silver-aluminum paste, the doping junction depth of the P-type doped surface is usually Above 0.5um, far greater than the thickness of Polysilicon polysilicon, it cannot achieve the expected effect of reducing metal decombination

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