P type silicon carbide device and preparation thereof

Abstract

The invention discloses a P-type silicon carbide apparatus and a manufacturing method thereof. The P-type silicon carbide apparatus comprises a silicon carbide layer and an aluminum electrode layer; a gold nano-particle layer is arranged between the silicon carbide layer and the aluminum electrode layer. The manufacturing method comprises: firstly, depositing the gold nano-particle layer on the silicon carbide layer by using a sputtering method, and carrying out annealing treatment, wherein, the depositing thickness is 100 nanometers, the temperature of the annealing treatment is 450 to 710 DEG C, the annealing time is 8 to 10 minutes, and the protective gas is nitrogen; and then, manufacturing the aluminum electrode layer on the gold nano-particle layer. The manufactured P-type silicon carbide apparatus has better ohmic contact performance.

Description

technical field [0001] The invention relates to a semiconductor technology, in particular to a P-type silicon carbide device and a manufacturing method thereof. Background technique [0002] Due to the wide band gap, high critical electric field strength, large saturated electron velocity and high thermal conductivity of silicon carbide materials, it is suitable for the production of electronic devices such as high temperature, high pressure, high frequency, high power and radiation resistance. ideal material. Ohmic contacts have a linear voltage-current relationship; the resistance is negligible relative to the size of the SiC device. Making a good ohmic contact is one of the important processes for making semiconductor devices, especially for silicon carbide devices that need to be manufactured with high power. How to improve the ohmic contact performance has become the key to restricting the practical use of this kind of device. [0003] A good ohmic contact requires a ...

AI Technical Summary

Problems solved by technology

The most commonly used method to obtain a good ohmic contact is heavy doping, which can make the barrier thinner and increase the tunnel current, but for many materials, it is difficult to achieve high doping, and high doping method is used to do The minimum contact resistance obtained is also limited by the doping concentration; in many cases, annealing can form a stable barrier height and low leakage current, which is a better way to form an ohmic contact, but this method is not easy to determine the formed Is the contact an ohmic contact or a Schottky rectifying contact

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