Light emitting diode and manufacturing method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- XIAMEN CHANGELIGHT CO LTD
- Publication Date
- 2018-01-05
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Abstract
Description
technical field
[0001] The present invention relates to light-emitting diodes, and more specifically, to a light-emitting diode and a manufacturing method thereof. Background technique
[0002] A light emitting diode (Light Emitting Diode, LED) is an optoelectronic semiconductor element that can convert current into a specific wavelength range. It has the advantages of low power consumption, small size, high brightness, easy matching with integrated circuits, and high reliability, and is widely used as a light source.
[0003] Current blue-green light-emitting diodes have the problem of current crowding, especially for high-power light-emitting diodes, which causes a significant drop in saturation current to a large extent, thereby reducing light efficiency. The inventors found that the reason for the current crowding is that the structure of blue-green light-emitting diodes is mostly epitaxial multi-layer gallium nitride-based material structure on a sapphire substrate, an...