InGaN/GaN multiple quantum well solar cells with low temperature insertion layer

Abstract

An indium gallium nitride or gallium nitride multi-quantum-well solar cell comprising a low-temperature insert layer comprises a substrate, a low-temperature nucleating layer which is manufactured on the substrate, an unintentional doping gallium nitride buffering layer which is manufactured on the low-temperature nucleating layer, an n type doping gallium nitride layer which is manufactured on the unintentional doping gallium nitride buffering layer, an unintentional doping multi-quantum-well layer which is manufactured on one side above the n type doping gallium nitride layer, a p type doping gallium nitride layer which is manufactured on the unintentional doping multi-quantum-well layer, an N type ohmic electrode which is manufactured on a platform surface of the n type doping gallium nitride layer and a P type ohmic electrode which is manufactured on the p type doping gallium nitride layer; the low-temperature nucleating layer provides a nucleation center for later growth of the gallium nitride materials; the platform surface is formed above the other side of the n type doping gallium nitride layer; the unintentional doping multi-quantum-well layer is an absorption layer of a indium gallium nitride solar cell. The indium gallium nitride or gallium nitride multi-quantum-well solar cell has the advantages of increasing absorption of incident light and improving the separating efficiency of carriers.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an indium gallium nitride / gallium nitride multi-quantum well solar cell containing a low-temperature insertion layer. Background technique [0002] Since the bandgap of InGaN ternary alloys is continuously adjustable from the near-infrared spectral region to the ultraviolet spectral region, which perfectly matches the solar spectrum, the research on InGaN-based solar cells has attracted more and more attention in recent years. However, due to the large lattice mismatch between InGaN and GaN, it is difficult to grow InGaN materials with high In composition and high crystal quality. At present, the InGaN / GaN multiquantum well structure is generally used instead of the InGaN material as the absorption region of the solar cell. In the quantum well structure, the thickness of the InGaN well layer is smaller than the critical thickness. Therefore, compared with the bulk ...

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Problems solved by technology

However, during the heating process, the In in the well layer may desorb and form more V-pit at the same time, which may cause stress relaxation, which is not good for solar cells.

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