30results about How to "Solve process bottlenecks" patented technology

The present invention provides an epitaxial structure of Ga-face group III nitride, its active device, and the method for fabricating the same. The epitaxial structure of Ga-face AlGaN / GaN comprises a substrate, an i-GaN (C-doped) layer on the substrate, an i-Al(y)GaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-Al(y)GaN buffer layer, and an i-Al(x)GaN layer on the i-GaN channel layer, where x=0.1-0.3 and y=0.05-0.75. By using the p-GaN inverted trapezoidal gate or anode structure in device design, the 2DEG in the epitaxial structure of Ga-face group III nitride below the p-GaN inverted trapezoidal structure will be depleted, and thus fabricating p-GaN gate enhancement-mode (E-mode) AlGaN / GaN high electron mobility transistors (HEMTs), p-GaN anode AlGaN / GaN Schottky barrier diodes (SBDs), or hybrid devices.

The invention discloses normal-temperature maintenance-type active powder concrete and a preparation method thereof. Each cubic meter of the normal-temperature maintenance-type active powder concrete is prepared from 600-1600kg of cement, 400-2800kg of fine aggregate, 30-560kg of a high-strength admixture, 3-500kg of high tensile strength fibers, 0.4-45kg of organic fibers, 0.6-43.2kg of a water reducer (based on solid content), 0.06-43kg of an antifoaming agent, 6-129kg of an expanding agent and 100-430kg of water. The normal-temperature maintenance-type active powder concrete has superhigh strength and high toughness performances under the conditions of normal-temperature maintenance.

The invention discloses a shield gate trench MOSFET manufacturing method. Gate structure forming comprises steps: a hard mask layer is formed, and a gate forming area is defined; a semiconductor substrate is etched to form a deep trench; thermal oxidation is carried out to form a bottom oxidation layer; source polysilicon is formed; back etching of the polysilicon is carried out, and thus, the source polysilicon is flush with the top surface of the hard mask layer, a source polysilicon lateral extension part is formed outside the opening of the bottom oxidation layer and the top part of the bottom oxidation layer inside the opening of the hard mask layer; the hard mask layer is removed to form a top convex structure of the source polysilicon; the source polysilicon lateral extension part serves as a self-alignment mask to etch the bottom oxidation layer to form top trenches and inter-polysilicon isolation oxidation layers at two side surfaces of the source polysilicon; a gate dielectric layer is formed on the side surface of the top trench; and the top trench is filled to form a polysilicon gate, and chemical mechanical polishing is carried out. Thus, while the threshold voltage of the device is reduced, the gate source electric leakage of the device is reduced.

The invention discloses a shield gate trench power device. A bottom dielectric layer and an inter-polysilicon isolation dielectric layer are formed in a deep trench of a gate structure, a region encircled by the inter-polysilicon isolation dielectric layer forms a source trench, a gate trench is formed in a region, on which self-alignment etching is performed, of the bottom dielectric layer arranged at a top of the deep trench, a gate dielectric layer is formed on a side surface of a top, corresponding to the deep trench, of the gate trench, a polysilicon gate is formed in the gate trench, source polysilicon is formed in the source trench, and the polysilicon gate and polysilicon of the source polysilicon are simultaneously formed. The invention also discloses a fabrication method of the shield gate trench power device. By the fabrication method of the shield gate trench power device, the threshold voltage of the device can be reduced, and meanwhile, the gate-source electric leakage of the device can be reduced; the process flow can be substantially simplified, so that the process cost is reduced; and the frequency characteristic can be improved, and the shield gate trench power device has relatively large working current density.

The invention relates to the field of manufacturing three-dimensionally changed special-shaped castings through electroslag smelting casting, in particular to a method and device for manufacturing a three-dimensionally changed special-shaped casting through electroslag smelting casting. Electroslag smelting casting is used for completing secondary refining purification and casting near-net formingof consumable electrode materials. The method for manufacturing the three-dimensionally changed special-shaped casting through electroslag smelting casting comprises the specific processes that (1) acasting blank crystallizer adopts a combined structural form or a split type structural form; and (2) consumable electrodes in the smelting casting process are composed of two parts, namely the guiding electrode and the supplementary electrodes; the guiding electrode is followed and fixed relative to the crystallizer and internally provided with guiding channels; the supplementary electrodes aremovable and are arranged in the guiding channels; and the working form of the electrodes in the smelting casting process is as follows: the supplementary electrodes are continuously supplemented to the molten electroslag position through the guiding channels, and thus the smelting casting process is completed. Therefore, the method and device for manufacturing the three-dimensionally changed special-shaped casting through electroslag smelting casting is mainly suitable for casting of the three-dimensionally changed special-shaped casting.

The invention discloses a MEMS microvalve and its manufacturing process, relates to the MEMS technical field, and solves the technical problems of high requirements for the existing microvalve manufacturing process and poor pressure bearing capacity. The MEMS microvalve of the present invention includes a first silicon layer, composed of (111) crystal silicon material, and has a fluid inlet and a fluid outlet; the second silicon layer is made of (111) crystal silicon material, and has a fluid formed on the surface of the second silicon layer The outer flow channel and the rigid component with the inner flow channel, the rigid component is accommodated in the outer flow channel and can move between the valve opening position and the valve closing position, the second silicon layer includes a bonding part and a sealing part, and the second silicon layer The layer is bonded to the first silicon layer through the bonding part, the fluid inlet and the fluid outlet are located in the non-bonding area of ​​the first silicon layer, the outer flow channel is located between the non-bonding area of ​​the first silicon layer and the sealing part, and the upper part of the rigid part A buffer liquid gap is formed between the surface and the lower surface of the non-bonded region of the first silicon layer, and a suspension liquid gap is formed between the lower surface of the rigid component and the inner wall surface of the sealing part.

The invention relates to a group III / nitride epitaxial structure, an active element and a manufacturing method thereof. It includes a substrate; a gallium nitride high resistance layer on the substrate; a gallium aluminum nitride buffer layer on the gallium nitride high resistance layer; a gallium nitride channel layer on the gallium aluminum nitride buffer layer an aluminum gallium nitride barrier layer on the gallium nitride channel layer; a fluorine ion structure in the aluminum gallium nitride barrier layer; and a first gate insulating dielectric layer on the fluorine ion structure. The gallium aluminum nitride buffer layer is to block the defect electrons of the buffer layer from entering the channel layer and thus reduce the current collapse effect; the gallium nitride enhanced aluminum gallium nitride / gallium nitride high-speed electron mobility transistor, hybrid Schottky barrier diodes or hybrid device-enhanced AlGaN / GaN high-speed electron mobility transistors.

The invention provides a chitosan oligosaccharide oral liquid and a preparation method thereof. The oligochitosan oral liquid comprises 25-40 parts of oligochitosan, 1-3 parts of flavoring agent, 2-4 parts of preservative and 1.5-2 parts of stabilizer. The chitosan oligosaccharide oral liquid of the invention obviously improves the stability of the chitosan oligosaccharide liquid preparation and improves the mouthfeel of the chitosan oligosaccharide. The chitosan oligosaccharide oral liquid of the invention has good stability, ideal taste and remarkable slimming effect.

The invention provides a cold heading opening and closing die of an automobile double-flange special-shaped work piece. The die comprises a punch part and a die making part, and is characterized in that the punch part comprises a punch casing, a punch spring, a punch ejector sleeve, a punch head and a spring sleeve; the die making part comprises a die casing, an opening and closing die flap, an opening and closing die casing, an opening and closing die opening pin, an opening and closing die opening spring, a synchronous retaining pin, an opening and closing die ejector pin, an opening and closing die casing die flap cushion block, a die making ejector sleeve, a die making plunger, a die making plunger rear spring and a three-wire set. The die is reasonable in design, greatly improves the operating efficiency, reduces the production cost, ensures that two flanges are formed by impacting at one step, has continuous and automatic production capacity, and solves technical bottlenecks in the prior art.

The invention relates to a preparation method, a drug preparation and clinical application of a medicine effective component, especially relates to a preparation method of salvianolic acid B from traditional Chinese medicine salvia miltiorrhiza, and a drug preparation and clinical application, and belongs to the traditional Chinese medicine (TCM) technical field. Through use of a new method and a new idea of traditional Chinese medicine chemistry, the goal of being completely green, intelligent and circular economic can be realized, the degradation or transformation of the target compound can be effectively avoided, the preparation method has the advantages of energy conservation and emissions reduction, loss reduction, cost reduction, simple equipment and strong maneuverability, is more suitable for industrial production, and the yield is improved to 65-76% (on the basis of extract content). The present invention also discloses a variety of pharmaceutical acceptable dosage forms and new dosage forms and the clinical application in protecting of myocardial ischemia and anoxia, improvement of microcirculation, reduction of blood viscosity, inhibition of platelet aggregation and thrombosis formation and the like.

Provided are a micro-tension wire feeding device (3) and an automatic bridge wire welding system with same. The micro-tension wire feeding device (3) comprises a shell (300), and a tension rod (301), a wire passing wheel (304), a clamping member (305) and a tension wheel (302) which are arranged on the shell (300), and a damper in transmission connection with the tension wheel (302), wherein one end of the tension rod (301) is connected to the shell (300), and the other end thereof is provided with a pulley (306). The automatic bridge wire welding system comprises a micro-tension wire feeding device (3) and a bridge wire positioning device (4), wherein the micro-tension wire feeding device (3) feeds a bridge wire (96) into the bridge wire positioning device (4).

An expansion device and an expansion method, the device comprises a base and a moving frame, a telescopic mechanism is arranged in the base, a telescopic end of the telescopic mechanism and an end away from the telescopic end are provided with rotating components, and a side wall of the base is provided with a rotating assembly A sliding hole through which the component passes, a sliding slot matched with the rotating component is arranged on the moving frame, and a push plate component is arranged on the side of the moving frame away from the base. The device can amplify the thrust to meet the requirements of technical indicators.