N-face AlGaN/GaN epitaxial structure, active component of N-face AlGaN/GaN epitaxial structure and integrated polarity inversion manufacturing method of N-face AlGaN/GaN epitaxial structure

Abstract

The invention relates to an N-face AlGaN / GaN epitaxial structure, an active component thereof and a manufacturing method of the N-face AlGaN / GaN epitaxial structure. The structure comprises a substrate; a buffer layer which is positioned on the silicon substrate and is doped with carbon; a GaN layer with carbon doping which is positioned on the buffer layer with carbon doping; an intrinsic Al (y)GaN buffer layer which is positioned on the intrinsic GaN carbon doped layer; an intrinsic GaN channel layer which is positioned on the intrinsic Al (y) GaN buffer layer; and an intrinsic Al (x) GaN layer which is positioned on the intrinsic GaN channel layer, X is equal to 0.1 to 0.3, and y is equal to 0.05 to 0.75. According to the assembly, a two-dimensional electron gas in an N-face AlGaN / GaNepitaxial structure can be in a depletion state below a P-GaN inverted trapezoidal structure by virtue of a P-GaN inverted trapezoidal gate or an anode structure; wherein the two-dimensional electrongas is located at the junction of the intrinsic GaN channel layer and the intrinsic Al (y) GaN layer; thereafter, active components such as a P-type gallium nitride gate enhanced AlGaN / GaN high-speedelectron mobility transistor and the like are manufactured by the structure.

Description

technical field [0001] The present invention relates to an epitaxial structure, in particular to an epitaxial structure grown in N-face AlGaN / GaN semiconductor series and its active component and its integrated manufacturing method. Background technique [0002] In the past known technology, the most common way to achieve enhanced AlGaN / GaN high-speed electron mobility transistor (E-Mode AlGaN / GaN HEMT) with epitaxial structure is 1. Ga-face P-GaN gate enhanced type High-speed electron mobility transistor structure, 2.N-Face Al(x)GaN gate-enhanced high-speed electron mobility transistor structure, but just as the two components are named, it can be seen that only the gate area will retain P-GaN or Al (x) GaN. [0003] The most common process method is to use an epitaxial structure, etch away the P-GaN outside the gate area by dry etching, and try to keep the integrity of the epitaxial layer thickness of the next layer, because when the next layer If the epitaxial layer of ...

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Problems solved by technology

[0003] The most common process method is to use an epitaxial structure, etch away the P-GaN outside the gate area by dry etching, and try to keep the integrity of the epitaxial layer thickness of the next layer, because when the next layer If the epitaxial layer of the first layer is etched too much, the 2D electron gas at the AlGaN / GaN junction of the N-face P-GaN gate-enhanced high-speed electron mobility transistor structure cannot be formed

Therefore, the method of dry etching is actually very difficult because: 1. The etching depth is difficult to control, 2. The thickness of each epitaxial layer on the epitaxial chip will still be uneven; in addition, this epitaxial structure is different from the general depletion type. The current collapse effect (Current Collapse) of the epitaxial structure of the high-speed electron mobility transistor structure must be solved, such as: buffer layer defects (Buffer Traps) and surface defects (Surface Traps)

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