Group-III/nitride epitaxial structure, an active element thereof and a manufacturing method thereof

Abstract

The invention relates to a group III / nitride epitaxial structure, an active element thereof and a manufacturing method thereof. The structure includes a substrate; A gallium nitride high resistance layer on the substrate; A gallium aluminum nitride buffer layer located on the gallium nitride high resistance layer; A gallium nitride channel layer located on the gallium aluminum nitride buffer layer; A gallium aluminum nitride barrier layer located on the gallium nitride channel layer; A fluorine ion structure located within the gallium aluminum nitride barrier layer; And a first gate insulatingdielectric layer located on the fluorine ion structure. GaN buffer layer is the problem of blocking electrons from entering the channel layer and reducing the current collapse effect. A GaN reinforcealuminum gallium nitride / GaN high-speed electron mobility transistor, a hybrid Schottky barrier diode or a hybrid device reinforce aluminum gallium nitride / GaN high-speed electron mobility transistorare fabricated by that structure.

Description

Technical field [0001] The present invention relates to an epitaxial structure, in particular to an epitaxial structure grown by a III / nitride semiconductor series. The advantage is that the i-AlGaN barrier layer has a gallium nitride barrier layer. The growth environment of the aluminum buffer layer (i-AlGaN buffer layer) has fewer defects, thereby reducing the surface traps of the i-AlGaN barrier layer. As for the i-AlGaN buffer layer (i-AlGaN buffer layer), it is possible to block the electrons of the buffer trap from entering the channel layer to reduce the current collapse effect (Current Collapse). Integrated production method. Background technique [0002] In the past, the most common way to achieve enhanced high-speed electron mobility transistors with epitaxial structure is 1. Gallium cleavage surface (Ga-Face) P-GaNGate (P-GaNGate) enhanced (E-Mode) high-speed electron mobility transistor structure (HEMT structure), 2.Al(x)GaN Gate) enhanced (E-Mode) -Mode) High-spee...

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Problems solved by technology

[0003] The most common process method is to grow an additional layer of P-type GaN (P -GaN) layer, and then etch away the P-type gallium nitride (P-GaN) outside the gate (Gate) area by dry etching, and try to keep the next layer of aluminum gallium nitride (AlGaN) epitaxy The integrity of the thickness of the crystal layer, because if the next layer of aluminum gallium nitride (AlGaN) epitaxial layer is etched too much, it will cause gallium cleavage surface (Ga-Face) P-type gallium nitride gate (P-GaN The two-dimensional electron gas (2-DEG) of the AlGaN / GaN interface of the enhanced high-speed electron mobility transistor (E-Mode HEMT structure) structure of Gate) cannot be formed

Therefore, the method of dry etching is actually very difficult because: 1. The etching depth is difficult to control, 2. The thickness of each epitaxial layer on the epitaxial chip will still be uneven; in addition, this epitaxial structure is different from the general depletion type. (D-Mode) AlGaN / GaN High Speed ​​Electron Mobility Transistor (AlGaN / GaN HEMT) epitaxial structure has the problem of current collapse effect (Current Collapse) that must be solved, for example: buffer layer defect (Buffer Traps) and surface defects (Surface Traps)

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