Group III/nitride epitaxial structure and its active device and its integrated method

Abstract

The invention relates to a group III / nitride epitaxial structure, an active element and a manufacturing method thereof. It includes a substrate; a gallium nitride high resistance layer on the substrate; a gallium aluminum nitride buffer layer on the gallium nitride high resistance layer; a gallium nitride channel layer on the gallium aluminum nitride buffer layer an aluminum gallium nitride barrier layer on the gallium nitride channel layer; a fluorine ion structure in the aluminum gallium nitride barrier layer; and a first gate insulating dielectric layer on the fluorine ion structure. The gallium aluminum nitride buffer layer is to block the defect electrons of the buffer layer from entering the channel layer and thus reduce the current collapse effect; the gallium nitride enhanced aluminum gallium nitride / gallium nitride high-speed electron mobility transistor, hybrid Schottky barrier diodes or hybrid device-enhanced AlGaN / GaN high-speed electron mobility transistors.

Description

technical field [0001] The present invention relates to an epitaxial structure, in particular to an epitaxial structure grown in a III-group / nitride semiconductor series, the advantage of which is that the aluminum gallium nitride barrier layer (i-AlGaN barrier layer) has The growth environment of the aluminum buffer layer (i-AlGaN buffer layer) will have fewer defects, thereby reducing the surface traps of the aluminum gallium nitride barrier layer (i-AlGaN barrier layer). As for the i-AlGaN buffer layer (i-AlGaN buffer layer), which can just block the buffer trap electrons from entering the channel layer (channel layer), thereby reducing the current collapse effect (Current Collapse), the new active device and its product Integrated method of production. Background technique [0002] In the past known technology, the most common way to achieve enhanced high-speed electron mobility transistors with epitaxial structures is 1. Gallium cleavage plane (Ga-Face) P-type gallium...

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Problems solved by technology

[0003] The most common process method is to grow an additional layer of P-type GaN (P -GaN) layer, and then etch away the P-type gallium nitride (P-GaN) outside the gate (Gate) area by dry etching, and try to keep the next layer of aluminum gallium nitride (AlGaN) epitaxy The integrity of the thickness of the crystal layer, because if the next layer of aluminum gallium nitride (AlGaN) epitaxial layer is etched too much, it will cause gallium cleavage surface (Ga-Face) P-type gallium nitride gate (P-GaN The two-dimensional electron gas (2-DEG) of the AlGaN / GaN interface of the enhanced high-speed electron mobility transistor (E-Mode HEMT structure) structure of Gate) cannot be formed

Therefore, the method of dry etching is actually very difficult because: 1. The etching depth is difficult to control, 2. The thickness of each epitaxial layer on the epitaxial chip will still be uneven; in addition, this epitaxial structure is different from the general depletion type. (D-Mode) AlGaN / GaN High Speed ​​Electron Mobility Transistor (AlGaN / GaN HEMT) epitaxial structure has the problem of current collapse effect (Current Collapse) that must be solved, for example: buffer layer defect (Buffer Traps) and surface defects (Surface Traps)

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