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Method for improving ultraviolet transmittance of aluminum nitride wafer

An aluminum nitride and transmittance technology is applied in the field of improving the ultraviolet transmittance of aluminum nitride wafers, which can solve the problems of poor diffusion effect and insignificant effect of the ultraviolet transmittance of the wafer, so as to ensure the output and improve the ultraviolet transmittance. Over-rate, high-yield effects

Active Publication Date: 2021-11-19
ULTRATREND TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this environment, the unintentionally doped impurities inside the wafer have poor diffusion effect in a lower pressure environment, and the effect of improving the UV transmittance of the wafer is not obvious.

Method used

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  • Method for improving ultraviolet transmittance of aluminum nitride wafer
  • Method for improving ultraviolet transmittance of aluminum nitride wafer
  • Method for improving ultraviolet transmittance of aluminum nitride wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Reference attached Figure 1-3 and Figure 6 , the implementation steps of this illustrated embodiment are as follows:

[0043] Step T11: prepare an AlN single wafer 1 and two AlN polycrystalline protective layers 2 and 3, the orientation of the AlN single wafer 1 is c-direction, and its thickness is 0.6 mm, the thickness of the two AlN polycrystalline protective layers 2 and 3 Both are 1mm. Both the AlN single wafer and the two AlN polycrystalline protective layers were ground on both sides. The initial UV absorption coefficient of AlN single wafer is 30-45cm at 265nm wavelength -1 .

[0044] Step T12: The AlN single wafer and two AlN polycrystalline protective layers 2 and 3 form a sandwich composite structure A, and put the sandwich composite structure A into a container composed of upper and lower tungsten sheets 4, 6 and a cylindrical tungsten object 5, Form a closed environment. Place the assembled container in a high temperature furnace.

[0045]Step T21: ...

Embodiment 2

[0053] Reference attached figure 1 , 3 , 4-5 and Figure 7 , the implementation steps of this illustrated embodiment are as follows:

[0054] Step 1: Prepare multiple AlN single wafers 1 and multiple AlN polycrystalline protective layers 2, 3, 4, 5. The orientation of the AlN single wafer is c or m or r with an off angle, and its thickness is between 0.3- The thickness of the AlN polycrystalline protective layers 2, 3, 4 and 5 is between 0.5-4mm. Each single AlN wafer is fully covered by two AlN polycrystalline protective layers.

[0055] Step 2: Refer to attached Figure 4 Each AlN single chip 1 and its corresponding two AlN polycrystalline protective layers 2, 3, 4, 5 form a plurality of sandwich composite structures, and put the multiple sandwich composite structures into a multi-layer container to form a closed environment. Place the assembled container in a high temperature furnace.

[0056] Step 3: Vacuum the furnace to a vacuum degree of 10 -4 pa.

[0057] Step ...

Embodiment 3

[0063] Reference attached Figure 1-3 and Figure 6 , the implementation steps of this illustrated embodiment are as follows:

[0064] Step T11: prepare an AlN single wafer 1 and tantalum protective layers 2 and 3, the orientation of the AlN single wafer 1 is the m direction, double-sided grinding and its thickness is 2.2 mm, the thickness of the tantalum protective layers 2 and 3 are both 1.8 mm . AlN single wafers were carried out. The initial UV absorption coefficient of AlN single wafer is 45-55cm at 265nm wavelength -1 .

[0065] Step T12: AlN single wafer and tantalum sheet protection layers 2 and 3 form a sandwich composite structure A, and put the sandwich composite structure A into a container composed of upper and lower tantalum sheets 4, 6 and a cylindrical tungsten object 5 to form a closed environment . Place the assembled container in a high temperature furnace.

[0066] Step T21: evacuate the high-temperature furnace to a vacuum degree of 10 -5 pa.

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Abstract

The invention provides a method for improving the ultraviolet transmittance of an aluminum nitride wafer, which comprises the steps of covering at least one layer of protective material on the upper surface and the lower surface of the aluminum nitride wafer to be treated to form an interlayer composite structure; assembling the interlayer composite structure into a container, and placing the container in a high-temperature furnace; vacuumizing the high-temperature furnace, inflating protective gas after the temperature is raised, and conducting heat preservation for preset time after the preset heat preservation temperature and the low-pressure environment are reached; and cooling to room temperature, taking out the container from the high-temperature furnace, removing the protective material in the interlayer composite structure, and taking out the aluminum nitride wafer. According to the method disclosed by the invention, the ultraviolet light transmittance of the AlN wafer is improved by adopting a high-temperature and low-pressure heat treatment mode, and the uniformity of the color and optical performance of the wafer caused by unintentional doping is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for improving the ultraviolet transmittance of an aluminum nitride wafer. Background technique [0002] Aluminum nitride (AlN) crystal has a direct bandgap width of 6.2ev, which is a typical material of the third-generation wide bandgap semiconductor. It has physical properties such as high breakdown field strength, broadband system, high surface sound velocity, and high thermal conductivity. High temperature, high power, ultraviolet light-emitting devices and other aspects have considerable application prospects. At the same time, with the continuous expansion of the application of AlGaN (aluminum gallium nitrogen)-based devices in high-precision processing, medical treatment, etc., the epitaxial growth of AlGaN (aluminum gallium nitrogen) has low dislocation due to its small mismatched lattice constant. The advantages of density, flat surface, less str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/02C30B29/40
CPCC30B33/02C30B29/403
Inventor 吴亮李哲王琦琨雷丹黄嘉丽张刚赵寅廷
Owner ULTRATREND TECH INC
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