Three-family nitride-based phototransistor detector and manufacturing method thereof

A technology of phototransistor and manufacturing method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the influence of device light absorption efficiency and photogenerated carrier generation efficiency, and the p-type base memory effect has not been solved, which is not conducive to photogenerated carriers Problems such as carrier transport, to achieve the effect of improving photoelectric conversion efficiency, improving steepness, and reducing dark current
CN102820368BInactive Publication Date: 2014-12-03SUN YAT SEN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SUN YAT SEN UNIV
Publication Date
2014-12-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a three-family nitride-based phototransistor detector and a manufacturing method thereof. The phototransistor detector comprises a substrate (101), a buffering layer or transition layer (102), an unintentional doping layer (103), a donor doping layer (104), a secondary unintentional doping layer (105), an acceptor doping layer (106), an acceptor and donor co-doping layer (107), a third unintentional doping layer (108), an alloy component gradient layer (109), a donor doping layer made of a material with a larger forbidden bandwidth, and a contact layer (111) in sequence from bottom to top. The three-family nitride-based phototransistor detector provided by the invention has the advantages of low defect density, low working voltage, high grain, low dark current, high probing sensitivity and the like.
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Description

technical field

[0001] The invention relates to a group III nitride-based phototransistor detection device and a manufacturing method thereof. Background technique

[0002] Group III nitride materials have the characteristics of direct band gap, high electron saturation rate, high luminous efficiency, good thermal conductivity, stable chemical properties, high physical hardness, small dielectric constant and high temperature resistance, making them ideal for preparing photodetector devices. important semiconductor materials. At the same time, the three-group nitrides can form multi-element alloy materials with each other, and photodetection from ultraviolet to near-infrared bands can be realized by adjusting the composition of the multi-element alloy. It is precisely because of the above-mentioned characteristics of III-nitride materials that the technology of III-nitrides has developed rapidly in recent decades, and a series of photodetection devices with good performance ...

Claims

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