Three-family nitride-based phototransistor detector and manufacturing method thereof

Abstract

The invention discloses a three-family nitride-based phototransistor detector and a manufacturing method thereof. The phototransistor detector comprises a substrate (101), a buffering layer or transition layer (102), an unintentional doping layer (103), a donor doping layer (104), a secondary unintentional doping layer (105), an acceptor doping layer (106), an acceptor and donor co-doping layer (107), a third unintentional doping layer (108), an alloy component gradient layer (109), a donor doping layer made of a material with a larger forbidden bandwidth, and a contact layer (111) in sequence from bottom to top. The three-family nitride-based phototransistor detector provided by the invention has the advantages of low defect density, low working voltage, high grain, low dark current, high probing sensitivity and the like.

Description

technical field [0001] The invention relates to a group III nitride-based phototransistor detection device and a manufacturing method thereof. Background technique [0002] Group III nitride materials have the characteristics of direct band gap, high electron saturation rate, high luminous efficiency, good thermal conductivity, stable chemical properties, high physical hardness, small dielectric constant and high temperature resistance, making them ideal for preparing photodetector devices. important semiconductor materials. At the same time, the three-group nitrides can form multi-element alloy materials with each other, and photodetection from ultraviolet to near-infrared bands can be realized by adjusting the composition of the multi-element alloy. It is precisely because of the above-mentioned characteristics of III-nitride materials that the technology of III-nitrides has developed rapidly in recent decades, and a series of photodetection devices with good performance ...

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Problems solved by technology

In addition, its epitaxial growth needs to deposit alloy materials with wider bandgap starting from the substrate interface, which requires high growth technology and it is difficult to ensure the crystal quality of the material

In 2001, Robert Mouillet and others from Osaka Gas Co., Ltd. in Japan wrote the article Photoresponse and Defect Levels of AlGaN / GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer (Jpn. J. Appl. Phys, Vol. 40, pp. L498-L501) Introduced the AlGaN / GaN heterojunction UV photodetector with normal incidence, but since the structure above the base (p-GaN) uses n-GaN material with the same band gap as the collector terminal, the device’s Both light absorption efficiency and photogenerated carrier generation efficiency will be affected

And in Ultraviolet bandpass Al0.17Ga0.83N / GaN heterojunction phototransitors with high optical gain and high rejection ratio in 2008 by M. L. Lee et al. (Applied Physics Letters, Vol. 92, 053506) in the study, although the normal incidence method and the AlGaN material with wide bandgap width were set as the window layer, the absorption of incident light was improved, but its basic structure is to emit extreme light incident, and the incident light needs to pass through the secondary emission electrode (n+-GaN) and emitter (n-Al.17Ga0.83N) to reach the base and collector, so Diminished device response to light signals

At the same time, the band step between the emitter AlGaN energy band and the base GaN energy band in this structure is relatively large, which is not conducive to the transport of photogenerated carriers inside the device.

On the other hand, summarizing the current research reports on GaN-based phototransistor detectors, the work is all focused on the light incident structure and working principle of the device, and a problem that cannot be ignored in the preparation of n-p-n-type phototransistors, that is, the p-type base The memory effect brought about by acceptor doping (usually using Mg) has not been solved, which will affect the growth of subsequent epitaxial structures

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