Nitrogen-containing polar blue-violet LED chip with polarization-induced p-type doping layer and preparation method

Abstract

The invention relates to a nitrogen-containing polar blue-violet LED chip with a polarization-induced p-type doping layer and a preparation method, and belongs to the technical field of semiconductorlight emitting devices. The nitrogen-containing polar blue-violet LED chip is composed of a (0001) surface sapphire substrate, a low-temperature GaN buffer layer, a nitrogen-containing polar GaN template layer, an n-GaN electron injecting layer, a multi-quantum well active layer and a polarization-induced p-type doping hole injecting layer, the nitrogen-containing polar GaN template layer is inside provided with a SiNx mask layer, the polarization-induced p-type doping hole injecting layer is provided with a p electrode, and the n-GaN electron injecting layer has a bare bench, and an n electrode is arranged on the bare bench. According to the invention, the beveled sapphire substrate is improved, and the crystal quality and the surface evenness of an epitaxial wafer are improved; the SiNxmask layer is inserted into the nitrogen-containing polar GaN template layer in an in-situ manner, dislocation is effectively blocked, the concentration of unintentional doping is reduced, and the internal quantum efficiency is improved; Mg-doped AlGaN of which the Al component is linearly increased is employed to make the polarization-induced p-type doping hole injecting layer, the hole concentration is increased, the electron injecting efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices, and in particular relates to a nitrogen-polar blue-violet LED chip with a polarization-inducing p-type doped layer and a preparation method. Background technique [0002] GaN, AlN, InN and their alloy compounds are all direct bandgap semiconductors, and their forbidden band width can be continuously adjusted within 0.7eV to 6.2eV, and the corresponding luminous wavelengths extend from infrared to ultraviolet bands, which are ideal materials for preparing LEDs . But so far, Mg, the only suitable p-type dopant, has an activation energy as high as 200meV in GaN at room temperature. This leads to the fact that the activation efficiency of Mg at room temperature will not exceed 1%, and excessive doping concentration will introduce other problems, such as surface degradation, polarity reversal, etc. Therefore, the hole concentration in p-type GaN is difficult to exceed 10...

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Problems solved by technology

[0003] The purpose of the present invention is exactly to solve the low problem of Mg activation efficiency in the above-mentioned p-type material, with nitrogen polarity (epitaxy direction is axis direction) Mg-doped AlGaN with linearly increasing Al composition instead of traditional Mg-doped GaN as hole injection layer to prepare blue-violet LED

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