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Ultraviolet LED epitaxial structure and growth method thereof

A technology of epitaxial structure and growth method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of restricted application and low luminous efficiency, and achieve the effect of improving crystal quality, high luminous efficiency and good crystal quality

Pending Publication Date: 2022-07-08
广州市众拓光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although ultraviolet LEDs have broad application prospects, compared with blue light, their luminous efficiency is low, which restricts their further application.

Method used

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  • Ultraviolet LED epitaxial structure and growth method thereof

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Experimental program
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Effect test

Embodiment 1

[0034] An ultraviolet LED epitaxial structure, such as figure 1 As shown, it includes: sequentially growing a buffer layer 2 , an unintentional doped layer 3 , an n-type doped layer 4 , a multiple quantum well light-emitting layer 5 , an EBL layer 6 and a p-type AlGaN layer 7 on the substrate 1 .

[0035] The substrate 1 is sapphire; the buffer layer 2 includes an AlN layer, an AlGaN layer and an AlInGaN layer grown in sequence; the unintentional doped layer 3 is AlN; the n-type doped layer 4 is n-AlN; The multiple quantum well light-emitting layer 5 is (Al x Ga 1-x N / Al y Ga 1-y N) n , where x is 0.2, y is 0.3, and n is 5; the EBL layer 6 is a p-AlGaN barrier layer.

[0036] A method for growing an ultraviolet LED epitaxial structure, comprising the following steps:

[0037] 1. Growth buffer layer 2:

[0038] 1) An AlN layer is grown on the substrate 1. The growth temperature of the AlN layer is 700°C, the pressure is 50torr, the flow rate of TMAl is 50sccm, and the NH...

Embodiment 2

[0053] An ultraviolet LED epitaxial structure, such as figure 1 As shown, it includes: sequentially growing a buffer layer 2 , an unintentional doped layer 3 , an n-type doped layer 4 , a multiple quantum well light-emitting layer 5 , an EBL layer 6 and a p-type AlGaN layer 7 on the substrate 1 .

[0054] The substrate 1 is a silicon substrate 1; the buffer layer 2 includes an AlN layer, an AlGaN layer and an AlInGaN layer grown in sequence; the unintentional doped layer 3 is AlGaN; the n-type doped layer 4 is n -AlGaN; the multiple quantum well light-emitting layer 5 is (Al x Ga 1-x N / Al y Ga 1-y N) n , where x is 0.3, y is 0.5, and n is 7; the EBL layer 6 is a p-AlInGaN barrier layer.

[0055] A method for growing an ultraviolet LED epitaxial structure, comprising the following steps:

[0056] 1. Growth buffer layer 2:

[0057] 1) An AlN layer is grown on the substrate 1. The growth temperature of the AlN layer is 750°C, the pressure is 80torr, the flow rate of TMAl i...

Embodiment 3

[0072] An ultraviolet LED epitaxial structure, such as figure 1 As shown, it includes: sequentially growing a buffer layer 2 , an unintentional doped layer 3 , an n-type doped layer 4 , a multiple quantum well light-emitting layer 5 , an EBL layer 6 and a p-type AlGaN layer 7 on the substrate 1 .

[0073] The substrate 1 is silicon carbide; the buffer layer 2 includes an AlN layer, an AlGaN layer and an AlInGaN layer grown in sequence; the unintentional doped layer 3 is InAlGaN; the n-type doped layer 4 is n-InAlGaN ; The multiple quantum well light-emitting layer 5 is (Al x Ga 1-x N / Al y Ga 1-y N) n , where x is 0.4, y is 0.6, and n is 10; the EBL layer 6 is a p-AlN barrier layer.

[0074] A method for growing an ultraviolet LED epitaxial structure, comprising the following steps:

[0075] 1. Growth buffer layer 2:

[0076] 1) An AlN layer is grown on the substrate 1. The growth temperature of the AlN layer is 800°C, the pressure is 100torr, the flow rate of TMAl is 15...

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Abstract

The invention discloses an ultraviolet LED epitaxial structure and a growth method thereof, and relates to the technical field of semiconductor materials. Comprising a buffer layer, an unintentional doping layer, an n-type doping layer, a multi-quantum well light-emitting layer, an EBL layer and a p-type AlGaN layer which are sequentially grown on a substrate, the buffer layer comprises an AlN layer, an AlGaN layer and an AlInGaN layer which grow in sequence, and the growth temperature of the buffer layer is 700-1100 DEG C. According to the invention, the crystal quality of the LED epitaxial wafer can be improved, non-radiative recombination caused by defects is reduced, the recombination probability of electrons and holes is improved, the internal quantum efficiency is improved, and the luminous efficiency is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to an ultraviolet LED epitaxial structure and a growth method thereof. Background technique [0002] With the continuous development of LED technology, the luminous wavelength of LED has been expanded from the visible light band to the ultraviolet band. The wavelength of the ultraviolet band is 100-400 nm. According to the different wavelengths, the ultraviolet light is generally divided into three bands: A, B, and C: UVA is 400 nm. ~315nm, UVB is 315~280nm, UVC is 280~100nm. Among them, UVA is mainly used for UV curing and UV inkjet printing, UVB is mainly used for medical treatment, and UVC is mainly used for sterilization and disinfection. As a new type of ultraviolet light source, UV LED has the advantages of low energy consumption, small size, good integration, long life, environmental protection and non-toxicity. It is one of the fields and industr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/32H01L33/06H01L33/00
CPCH01L33/12H01L33/32H01L33/06H01L33/0075
Inventor 李国强
Owner 广州市众拓光电科技有限公司
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