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Semiconductor light-emitting device and manufacturing method thereof

A technology for light-emitting devices and manufacturing methods, which can be applied to semiconductor devices, electrical components, circuits, etc., and can solve the problems of poor heat dissipation capacity and low light extraction efficiency.

Inactive Publication Date: 2013-09-18
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for manufacturing a semiconductor light emitting device, which is used to solve the problems of low light extraction efficiency and poor heat dissipation in the prior art

Method used

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  • Semiconductor light-emitting device and manufacturing method thereof
  • Semiconductor light-emitting device and manufacturing method thereof
  • Semiconductor light-emitting device and manufacturing method thereof

Examples

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Embodiment 1

[0056] For the specific manufacturing method of the semiconductor light emitting device, please refer to the accompanying drawings.

[0057] see figure 1As shown, a semiconductor substrate is provided, preferably a 2-6 inch sapphire substrate 1 in this embodiment. An epitaxial layer (such as a GaN layer) is grown on the sapphire substrate 1 by metal-organic vapor deposition technology, and this layer includes a GaN buffer layer 25, an unintentionally doped gallium nitride layer 24, an N-type Ga layer 23 , light emitting region 22 and P-type GaN layer 21 .

[0058] Then carry out the laser interface irradiation process, please refer to the attached figure 2 As shown, firstly, a protective layer 20 is deposited on the upper surface of the above-mentioned epitaxial layer (i.e., the surface) by plasma chemical vapor deposition technology. The material of the protective layer 20 can be silicon dioxide or silicon nitride, with a thickness of

[0059] Then adopt laser band or o...

example 2

[0075] Example 2 is basically the same as Example 1, the difference is that the step of roughening the laser interface is obtained after obtaining image 3 The structure shown follows. That is, photolithography and etching techniques are used to perform partial etching to expose part of the N-type GaN layer 23 and then roughen the laser interface. The specific steps of the laser interface roughening process are as follows: First, a protective layer is deposited on the upper surface of the epitaxial layer (on the GaN surface) using plasma chemical vapor deposition technology. The material of the protective layer can be silicon dioxide or silicon nitride. , with a thickness of

[0076] Then adopt laser band or other shapes of continuous irradiation treatment, combined with the size of the chip, adjust the laser focus for interface irradiation. The focused interface is the GaN buffer layer. Because the crystal quality of the GaN buffer layer is poor, it is easier to absorb t...

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Abstract

The invention provides a semiconductor light-emitting device and a manufacturing method thereof. The manufacturing method at least includes the following steps: providing a substrate; growing an epitaxial layer on the substrate; forming an air interlayer in zonal distribution and a corresponding coarsened structure interface between the substrate and the unintentional doping GaN layer; continuing subsequent chip processing; adopting an inverted packaging process to package the device, wherein the epitaxial layer comprises the GaN buffering layer, the unintentional doping GaN layer, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer sequentially front bottom to top. Heat dissipation capacity of a chip is effectively improved, and luminous efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a flip-chip semiconductor light-emitting device and a manufacturing method thereof. Background technique [0002] The main purpose of improving the luminous efficiency of LED chips is to improve the external quantum efficiency, that is, to improve the internal quantum efficiency and light extraction efficiency. In terms of internal quantum efficiency, the main way is to optimize the epitaxial structure to improve the recombination ability of electrons and holes; the main way to improve the light extraction efficiency is to roughen the interface of each layer, that is, to extract the light emitted by the light-emitting layer from the inside of the chip as much as possible. It is released instead of being converted into heat energy. However, ordinary chips are packaged in a formal structure. Since the substrate is basically sapphire, the heat dissipation capability is poor, and a lot ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/22
Inventor 陈诚齐胜利郝茂盛
Owner EPILIGHT TECH
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