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Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility

A high electron mobility, gallium nitride-based technology, applied in the semiconductor field, can solve the problems of reducing the quality of AlGaN/GaNHEMT device gate Schottky junction, affecting the performance of AlGaN/GaNHEMT devices, etc.

Inactive Publication Date: 2006-07-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, doping the entire barrier layer with Si will reduce the quality of the AlGaN / GaN HEMT device gate Schottky junction, thereby affecting the performance of the AlGaN / GaN HEMT device

Method used

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  • Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility
  • Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility
  • Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility

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Embodiment

[0030] Examples (see Figure 2-Figure 7 ):

[0031] (1) First, a thicker high-resistance (semi-insulating) gallium nitride buffer layer 20 is grown on the (0001) crystal surface of the substrate sapphire 10 by molecular beam epitaxy technology, the growth temperature is 1050° C., and the growth thickness is 1.5-5 μm. ( figure 2 ) The high-resistance (semi-insulating) gallium nitride buffer layer 20 can be generated by methods such as ion implantation, doping, compensation, etc., and the main purpose is to reduce the leakage of the buffer layer of the current when the device is in operation, thus preventing the device from operating temperature rise. Performance deterioration improves device stability.

[0032] (2) Second, grow a thin layer of non-intentionally doped AlGaN (Al x Ga 1-x N, 0≤x≤1) the insertion layer 30 has a thickness of 1-10 nm, ( image 3 ) According to needs, the Al composition x of the unintentionally doped AlGaN insertion layer 30 can be changed betwee...

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Abstract

The structure is as following: a sapphire substrate or silicon carbide substrate or silicon substrate; buffer layer of gallium nitride in high-ohmic resistor prepared on substrate; an interposed layer of unintentional doping aluminum ¿C gallium - nitrogen in thin layer prepared on buffer layer of gallium nitride in high-ohmic resistor; a channel layer of gallium nitride in high mobility prepared on the interposed layer of unintentional doping aluminum ¿C gallium ¿C nitrogen; a spatial isolation layer of unintentional doping aluminum ¿C gallium ¿C nitrogen prepared on the channel layer of gallium nitride in high mobility; n type supply layer of aluminum ¿C gallium ¿C nitrogen carrier prepared on the spatial isolation layer of unintentional doping aluminum ¿C gallium ¿C nitrogen; an unintentional doping aluminum ¿C gallium ¿C nitrogen covering cap layer prepared on n type supply layer of aluminum ¿C gallium ¿C nitrogen carrier.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a structure for improving the Schottky performance of the gallium nitride-based high electron mobility transistor gate. Background technique [0002] Group III-V gallium nitride (GaN) and its compound semiconductor materials, as typical representatives of the third-generation semiconductor materials, have great application prospects in the fields of optoelectronics and microelectronics due to their unique physical, chemical and mechanical properties. Due to the large band gap, high breakdown electric field, good chemical stability, high electron saturation velocity and peak velocity, and strong radiation resistance of GaN-based materials, aluminum gallium nitride / gallium nitride (AlGaN / GaN) High Electron Mobility Transistor (HEMT) has become the most dazzling new star in the field of microelectronics applications, and is expected to play an important role in aerospace, hig...

Claims

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Application Information

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IPC IPC(8): H01L29/812H01L21/338
Inventor 王晓亮王翠梅胡国新王军喜李建平曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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