Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility

A high electron mobility, gallium nitride-based technology, applied in the semiconductor field, can solve the problems of reducing the quality of AlGaN/GaNHEMT device gate Schottky junction, affecting the performance of AlGaN/GaNHEMT devices, etc.
CN1797787AInactive Publication Date: 2006-07-05INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2006-07-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

The structure is as following: a sapphire substrate or silicon carbide substrate or silicon substrate; buffer layer of gallium nitride in high-ohmic resistor prepared on substrate; an interposed layer of unintentional doping aluminum ¿C gallium - nitrogen in thin layer prepared on buffer layer of gallium nitride in high-ohmic resistor; a channel layer of gallium nitride in high mobility prepared on the interposed layer of unintentional doping aluminum ¿C gallium ¿C nitrogen; a spatial isolation layer of unintentional doping aluminum ¿C gallium ¿C nitrogen prepared on the channel layer of gallium nitride in high mobility; n type supply layer of aluminum ¿C gallium ¿C nitrogen carrier prepared on the spatial isolation layer of unintentional doping aluminum ¿C gallium ¿C nitrogen; an unintentional doping aluminum ¿C gallium ¿C nitrogen covering cap layer prepared on n type supply layer of aluminum ¿C gallium ¿C nitrogen carrier.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductors, in particular to a structure for improving the Schottky performance of the gallium nitride-based high electron mobility transistor gate. Background technique

[0002] Group III-V gallium nitride (GaN) and its compound semiconductor materials, as typical representatives of the third-generation semiconductor materials, have great application prospects in the fields of optoelectronics and microelectronics due to their unique physical, chemical and mechanical properties. Due to the large band gap, high breakdown electric field, good chemical stability, high electron saturation velocity and peak velocity, and strong radiation resistance of GaN-based materials, aluminum gallium nitride / gallium nitride (AlGaN / GaN) High Electron Mobility Transistor (HEMT) has become the most dazzling new star in the field of microelectronics applications, and is expected to play an important role in aerospace, hig...

Claims

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