leds based on gesn materials

Abstract

The invention relates to a GeSn material-based LED. The LED comprises a monocrystal Si substrate, a P type crystallization Ge layer, an intrinsic Ge layer and a SiO<2> passivation layer, wherein the monocrystal Si substrate, the P type crystallization Ge layer, the intrinsic Ge layer and the SiO<2> passivation layer are arranged in a stacked manner in sequence. According to the GeSn material-based LED provided by the embodiment, GeSn is adopted to replace Ge to be used as the light source in a photoelectric integrated circuit, so that luminous efficiency is improved and defect expansion can be suppressed effectively so as to obtain the high-quality Ge / Si virtual substrate; and in addition, a Ge barrier layer structure is introduced between the Ge doping layer and the GeSn intrinsic layer, so that unintentional doping to the GeSn by the doping source of the Ge layer can be avoided, thereby improving the performance of the device.

Description

technical field

[0001] The invention belongs to the technical field of integrated circuits, in particular to an LED based on GeSn material. Background technique

[0002] The development of integrated circuit technology, the increase of wafer size and the reduction of chip feature size can more easily meet the requirements of miniaturization, high density, high speed, high reliability and system integration. One of the longest used basic materials in integrated circuit technology is Si material. The Si substrate is used as the substrate to make the light source, which is easy to integrate and can reduce the cost.

[0003] In recent years, Ge material is expected to become a light source in Si-based optoelectronic integrated circuits due to its integrability with Si and its unique energy band structure. The direct band gap of the Ge material is only 136meV higher than the indirect band gap, and the direct band luminescence wavelength (1550nm) of Ge is located in the C band. ...

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