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A kind of infrared LED and preparation method thereof

An infrared and epitaxial layer technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of limiting the performance of PINGeSn light-emitting tubes, high dislocation density of Ge epitaxial layers, large surface roughness, etc. Avoid unintentional doping, high quality results

Active Publication Date: 2019-06-28
湛江通用电气有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the Ge epitaxial layer prepared by the two-step method has high dislocation density and large surface roughness, resulting in poor quality of the GeSn layer grown on it, which ultimately limits the performance of the PINGeSn light-emitting tube.
[0004] In addition, the doping source of the Ge layer in the PINGeSn LED will cause unintentional doping of the GeSn layer, which will affect the performance of the device.

Method used

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  • A kind of infrared LED and preparation method thereof
  • A kind of infrared LED and preparation method thereof
  • A kind of infrared LED and preparation method thereof

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Embodiment 1

[0051] See figure 1 , figure 1 A flow chart of a method for preparing an infrared LED provided in an embodiment of the present invention, wherein the method includes:

[0052] (a) select a single crystal Si substrate;

[0053] (b) growing a Ge epitaxial layer on the single crystal Si substrate;

[0054] (c) processing the entire material including the single crystal Si substrate and the Ge epitaxial layer by a laser recrystallization process to obtain a crystallized Ge layer;

[0055] (d) doping the crystallized Ge layer to form a p-type crystallized Ge layer;

[0056] (e) growing a first Ge barrier layer on the p-type crystallized Ge layer;

[0057] (f) growing a GeSn layer on the first Ge barrier layer;

[0058] (g) growing a second Ge barrier layer on the GeSn layer;

[0059] (h) growing a Ge layer on the second Ge barrier layer and doping to form an N-type Ge layer;

[0060] (i) Drawing out electrodes on the P-type crystallized Ge layer and the N-type Ge layer respe...

Embodiment 2

[0096] Please refer to Figure 3a-Figure 3m , Figure 3a-Figure 3m It is a schematic diagram of a preparation method of an infrared LED according to an embodiment of the present invention, and the preparation method includes the following steps:

[0097] S101, select single crystal Si substrate 001, such as Figure 3a shown.

[0098] S102. At a temperature of 250° C. to 350° C., a Ge seed layer 002 of 40 to 50 nm is grown on a single crystal Si substrate 001 by using a CVD process, such as Figure 3b shown.

[0099] S103, at a temperature of 550° C. to 600° C., using a CVD process to grow a Ge main layer 003 with a thickness of 150 to 250 nm on the surface of the Ge seed layer 002, such as Figure 3c shown.

[0100] S104, growing SiO with a thickness of 100-150 nm on the surface of the Ge main body layer 003 by using a CVD process 2 protective layer 004, such as Figure 3d shown.

[0101] S105, heating the entire substrate material including the single crystal Si subst...

Embodiment 3

[0112] Please refer to Figure 4 , Figure 4 It is a schematic structural diagram of an infrared LED provided by an embodiment of the present invention. The luminous tube adopts the above-mentioned Figure 3a-Figure 3m prepared as indicated. Specifically, the LED comprises: a single crystal Si substrate 301, a P-type crystallized Ge layer 302, a first Ge barrier layer 303, a GeSn layer 304, a second Ge barrier layer 305, an N-type Ge layer 306, a SiO 2 Passivation layer 307 and Cr—Au alloy electrode 308 .

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Abstract

The invention relates to an infrared LED and a method for preparing the same. The preparation method comprises: selecting a single-crystal Si substrate; growing a Ge epitaxial layer on the single-crystal Si substrate; processing the whole material including the single-crystal Si substrate and the Ge epitaxial layer by using a laser re-crystallization process to obtain a crystallized Ge layer; doping the crystallized Ge layer to form a P type crystalllized Ge layer; growing a first Ge barrier layer on the P type crystallized Ge layer; growing a GeSn layer on the first Ge barrier layer; growing a second Ge barrier layer on the GeSn layer; growing a Ge layer on the second Ge barrier layer and carrying out doping to form an N type Ge layer; and leading out electrodes respectively from the P type crystallized Ge layer and the N type Ge layer. Compared with the traditional light-emitting tub, the infrared LED has advantages of simple process, high light-emitting efficiency, and reliable device performance.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to an infrared LED and a preparation method thereof. Background technique [0002] In recent years, Si-based optoelectronic integration technology has become increasingly mature. Si has huge reserves in the earth's crust, is easy to obtain and cheap, and has good mechanical strength and thermal properties. The Si substrate is used as the substrate to make the light source, which is easy to integrate and can reduce the cost. In theory, high-speed transmission of optical information can be realized. Ge material, which is also a group IV element, is expected to be a light source in Si-based optoelectronic integrated circuits due to its integration with Si and its unique energy band structure. The direct band gap of the Ge material is only 136meV higher than the indirect band gap, and the direct band luminescence wavelength (1550nm) of Ge is located in the C ban...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/34
CPCH01L33/0012H01L33/0054H01L33/34
Inventor 冉文方
Owner 湛江通用电气有限公司
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