Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility

A high electron mobility, gallium nitride-based technology, applied in the semiconductor field, can solve the problems of reducing the quality of the gate and gate Schottky junction of AlGaN/GaN HEMT devices and affecting the performance of AlGaN/GaN HEMT devices.

Inactive Publication Date: 2008-04-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, doping the entire barrier layer with Si will reduce the quality of the AlGaN / GaN HEMT device gate Schottky junction, thereby affecting the performance of the AlGaN / GaN HEMT device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility
  • Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility
  • Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0030] Examples (see Figure 2-Figure 7 ):

[0031] (1) First, a thicker high-resistance (semi-insulating) gallium nitride buffer layer 20 is grown on the (0001) crystal surface of the substrate sapphire 10 by molecular beam epitaxy technology, the growth temperature is 1050° C., and the growth thickness is 1.5-5 μm. ( figure 2 ) The high-resistance (semi-insulating) gallium nitride buffer layer 20 can be generated by methods such as ion implantation, doping, compensation, etc., and the main purpose is to reduce the leakage of the buffer layer of the current when the device is in operation, thus preventing the device from operating temperature rise. Performance deterioration improves device stability.

[0032] (2) Second, grow a thin layer of non-intentionally doped AlGaN (Al x Ga 1-x N, 0≤x≤1) the insertion layer 30 has a thickness of 1-10 nm, ( image 3 ) According to needs, the Al composition x of the unintentionally doped AlGaN insertion layer 30 can be changed betwe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The structure is as following: a sapphire substrate or silicon carbide substrate or silicon substrate; buffer layer of gallium nitride in high-ohmic resistor prepared on substrate; an interposed layer of unintentional doping aluminum-gallium - nitrogen in thin layer prepared on buffer layer of gallium nitride in high-ohmic resistor; a channel layer of gallium nitride in high mobility prepared on the interposed layer of unintentional doping aluminum-gallium-nitrogen; a spatial isolation layer of unintentional doping aluminum-gallium-nitrogen prepared on the channel layer of gallium nitride in high mobility; n type supply layer of aluminum-gallium-nitrogen carrier prepared on the spatial isolation layer of unintentional doping aluminum-gallium-nitrogen; an unintentional doping aluminum-gallium-nitrogen covering cap layer prepared on n type supply layer of aluminum-gallium-nitrogen carrier.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a structure for improving the Schottky performance of the gallium nitride-based high electron mobility transistor gate. Background technique [0002] Group III-V gallium nitride (GaN) and its compound semiconductor materials, as typical representatives of the third-generation semiconductor materials, have great application prospects in the fields of optoelectronics and microelectronics due to their unique physical, chemical and mechanical properties. Due to the large band gap, high breakdown electric field, good chemical stability, high electron saturation velocity and peak velocity, and strong radiation resistance of GaN-based materials, aluminum gallium nitride / gallium nitride (AlGaN / GaN) High Electron Mobility Transistor (HEMT) has become the most dazzling new star in the field of microelectronics applications, and is expected to play an important role in aerospace, hig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/812H01L21/338
Inventor 王晓亮王翠梅胡国新王军喜李建平曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com