31results about How to "Control warping" patented technology

A method for improving deformation and permeability in the high-thickness standard steel plate hot rolling process is characterized in that a uniform fast cooling device is arranged at a position close to the opening of a heavy and medium plate mill or hot strip roughing mill with the length being 5 to 15 meters and the cooling total water being 3,000 to 6,000 cubic meters per hour respectively; before rolling, the cooling device conducts asymmetrical uniform fast cooling to the upper and lower surfaces of a plate blank, a low-temperature hardened layer is formed on the surface of the plate blank, the temperature gradient of a core reaches 2 to 3 DEG C per millimeter, before the cooling returns red, the cooling device can quickly enter the mill to conduct differential temperature rolling, and plate blank core deformation is improved; the cooling device is further combined with asymmetrical rolling, while deepening the plate blank core deformation, the cooling device solves the warping problem caused by the asymmetrical rolling through the asymmetrical cooling of the upper and lower surfaces of the plate blank before rolling. For a steel ball needing two-stage control, the uniform fast cooling device can replace a middle cooling device, shortens or even eliminates the temperature waiting time of swinging steel, and improves the production efficiency.

The invention discloses a chip packaging structure and a preparation method thereof. The preparation method comprises the following steps: providing a support plate, and preparing double-layer peeling structures on the upper surface and the lower surface of the support plate; preparing a rewiring layer on the side, away from the support plate, of each double-layer peeling structure; preparing first dielectric layers on each rewiring layer and the surface of each double-layer peeling structure; preparing at least one blind hole in each first dielectric layer; filling a conducting material in the blind holes; providing a chip, and arranging the chip on each first dielectric layer; preparing a second dielectric layer on the periphery of each chip, wherein each first dielectric layer is covered with the corresponding second dielectric layer, and each chip is wrapped by the corresponding second dielectric layer; peeling off the double-layer peeling structures; etching an upper-layer structure of each double-layer peeling structure so as to expose the corresponding rewiring layer and the corresponding first dielectric layer; and preparing a welded ball on the side, away from each first dielectric layer, of the corresponding rewiring layer, wherein each welded ball is electrically connected with the corresponding rewiring layer. To sum up, the preparation method is simple, high in operability and low in cost, and can avoid chip damage; and moreover, preparation technology is carried out on two sides of the support plate simultaneously, so that the efficiency is high, and warping is avoided.

The invention relates to a dual-side SiP three-dimensional package structure. The dual-side SiP three-directional package structure comprises a core pinboard (1), wherein a fan-out wafer-level packagestructure (2), a first passive component (3) and a first three-dimensional (3D) conductive part (4) are mounted on a front surface of the core pinboard (1), a chip (7), a second passive component (8)and a second 3D conductive part (6) are mounted on a back surface of the core pinboard (1), a first welding ball (10) is arranged on a back surface of the second 3D conductive part (6), shielding layers (15) are arranged on a front surface and a side surface of the package structure, and an opening (16) is formed in the shielding layer (15) on a front surface of the first 3D conductive part (4).By the dual-side SiP three-dimensional package structure, a pre-fabricated 3D conductive part can be used as a support structure for lamination and package, the 3D conductive part is used as a grounding end of electromagnetic shielding, the size height of a package module can be reduced, the high-frequency performance of the package module is improved, and electromagnetic interference is effectively prevented.

The invention discloses a low warpage ABS material for 3D printing, and a preparation method thereof, wherein the low warpage ABS material comprises, by weight, 10-50 parts of a PB-G-SAN copolymer, 50-90 parts of a SAN resin, 5-30 parts of an anti-warpage filler, 0.2-5 parts of a coupling agent, 0.1-1 part of an antioxidant, 1-5 parts of a lubricant, 0-0.5 part of an anti-ultraviolet agent, and 0-1 part of toner. The preparation method comprises: weighing various raw materials according to the ratio, carrying out uniform mechanical mixing, extruding the mixed material through a twin-screw extruder, carrying out normal temperature cooling, carrying out air drying, granulating to prepare a modified ABS particle, and extruding the modified ABS particle by using a 3D printing material extruder to produce the low warpage ABS material for 3D printing. According to the present invention, with the application of the prepared ABS material for 3D printing in printing, the advantages of uniform and smooth printing, no drawing, strong adhesion between the layers, low warpage and high size precision of the product, and printing of the large-size product can be provided.

The invention provides a cold and hot loop alternate mold conformal cooling system and belongs to the technical field of mold cooling. The cold and hot loop alternate mold conformal cooling system achieves the effects of keeping the temperature of a cooled mold core balanced and improving the cooling effect. The conformal cooling system comprises a cooling cavity formed in a mold core and a cooling core. An inflow cooling groove and a backflow cooling groove are spirally and alternately formed in the peripheral surface of the cooling core. The bottom of the cooling core is provided with a water inlet and a water outlet. The top end of the cooling core is provided with a communicating flow channel. The water inlet end of the inflow cooling groove is provided with a water inlet hole communicating with the water inlet. The water outlet end of the inflow cooling groove communicates with one end of the communicating flow channel. The water inlet end of the backflow cooling groove communicates with the other end of the communicating flow channel. The water outlet end of the backflow cooling groove is provided with a water outlet hole communicating with the water outlet. The cold and hotloop alternate mold conformal cooling system can make the temperature of the cooled mold core keep balanced, has the high cooling effect and can improve the production quality of plastic products.

The invention discloses an epoxy resin composition suitable for fan-out wafer level package. The epoxy resin composition is prepared from the following main components of epoxy resin, silica powder, curing agent and flow aid, wherein the content of the silica powder accounts for 89 to 93 percent of the total mass of the epoxy resin composition; the curing agent is one or a mixture of components shown in a formula (1) and a formula (2), and accounts for 3 to 8 percent of the total mass of the epoxy resin composition; the epoxy resin is shown as a formula (3), and accounts for 2 to 6 percent of the total mass of the epoxy resin composition; the flow aid is a methoxyl-containing organic silicon resin which accounts for 0.5 to 1 percent of the total mass of the epoxy resin composition. The epoxy resin composition can further contain a proper amount of catalyst, coloring agent, demolding agent, ion catching agent, coupling agent, stress absorbent and the like. The epoxy resin composition has the advantages that the glass transition temperature is remarkably raised, and the bending modulus is lowered. The problems of warping and insufficient liquidity under a large filling amount can be solved, so that continuous production can be realized by using a conventional extruder of the epoxy resin composition.

The invention provides a modular packaging structure and method. The modular packaging structure comprises: at least one first module arranged in a stacked manner, each comprising a first chip and a second chip arranged opposite to each other, the first chip being electrically led out to a first surface and/or a second surface of the first module, and the second chip being electrically led out tothe first surface and/or the second surface of the first module; and a second module which is attached to the first module and comprises a third chip, wherein the third chip is electrically led out tothe first surface and/or the second surface of the second module, and the second module is electrically connected with the first module.

The invention belongs to the technical field of polysilicon substrates, and specifically relates to a manufacturing method of a substrate used for a low-warping polycrystalline silicon solar cell. Theinvention provides a surface sand-blasting texturing mode of the polycrystalline silicon solar cell, and the warping degree of the polycrystalline silicon after texturing can be controlled by using the mode. The two-faced texturing degree of the silicon wafer is adjusted through wet process sand-blasting so as to obtain the silicon wafer with texturing structures on two faces, then the damage degree of the band-blasting processing procedure on two faces of the silicon wafer is judged through the glossiness after texturing on the two faces of the silicon wafer, and then the warping degree of the silicon wafer is controlled so as to reduce the probability of fragment occurrence.

To provide a solder-plating film which has good solder wettability and with which discoloration and twisting of the tin film after heat treatment are prevented. A method and a solution for surface treating a tin film are disclosed. The aqueous solution contains specific compounds and is brought into contact with a tin-plating film before reflow treatment of the tin film.

The invention discloses a nitride semiconductor epitaxial structure, which comprises a substrate, a nucleating layer, a transition layer, a composite buffer layer, a top gallium nitride layer and a coating layer are sequentially arranged on the substrate, the transition layer is an AlxGaN layer, the composite buffer layer comprises a first composite buffer layer, the first composite buffer layer comprises a plurality of Aly1GaN layers and a plurality of GaN layers which are mutually overlapped, y1 is greater than x, and y2 is greater than x. The Aly1GaN layers in the first composite buffer layer are the same in thickness, and the first GaN layers are the same in thickness. According to the method, the epitaxial layer is grown through superlattices, warping can be effectively controlled, the quality of gallium nitride is improved, defects are reduced, the product yield is increased, in the growth method of the superlattice composite buffer structure, different aluminum content growth modes are added, warping can be further effectively improved, and the product yield is increased.

This elevator landing entrance device comprises a surface plate 4 constituting a decorated face of a vertical frame 2 of a jamb; a reinforcing member 5 enabling the surface plate 4 to slide at a joint part in a horizontal direction at the time of thermal expansion of the surface plate 4; and a fire protecting shutter 10 guided by a rail groove 12 and lowered by an upper frame 3 of the jamb. As another constitution of this invention, the reinforcing member 5 is composed of a material having a linear expansion coefficient larger than the surface plate 4, or ends are rotatably jointed to both ends of the surface plate 4 at stepped positions against a horizontal direction, bridging both ends of the surface plate 4. The rear plate 6 is separated from the surface plate 4 and jointed with the reinforcing member 5.